QID1210005 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 E2 5 6 7 C2 8 9 Description: Powerex IGBT Modules are designed for use in high frequency applications; upwards of 30 kHz for hard switching applications and 80 kHz for soft switching applications. Each module consists of two IGBT Transistors with each transistor having a reverseconnected super-fast recovery free-wheel silicon carbide Schottky diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. 10 11 12 E1 C1 X B M N E G DETAIL "B" G2 S2 G1 S1 20 19 18 17 L 16 15 14 13 T S R W DETAIL "A" V H K C T DETAIL "A" C1 (10 - 12) C2 (4 - 6) G1 (15 - 16) G2 (19 - 20) E1 (13 - 14) E2 (17 - 18) E1 (7 - 9) E2 (1 - 3) Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 4.32 109.8 Q 0.449 11.40 B 2.21 56.1 R 0.885 22.49 C 0.71 18.0 S 1.047 26.6 D 3.70±0.02 94.0±0.5 T 0.15 3.80 E 2.026 51.46 U 0.16 4.0 F 3.17 80.5 V 0.30 7.5 G 1.96 49.8 W 0.045 1.15 H 1.00 25.5 X 0.03 0.8 K 0.87 22.0 Y 0.16 4.0 L 0.266 6.75 Z 0.47 12.1 M 0.26 6.5 AA N 0.59 15.0 P 0.586 14.89 0.17 Dia. 4.3 Dia. AB 0.10 Dia. 2.5 Dia. AC 0.08 Dia. 2.1 Dia. Features: £ Low ESW(off) £ Aluminum Nitride Isolation £ Discrete Super-Fast Recovery Free-Wheel Silicon Carbide Schottky Diode £ Low Internal Inductance £ 2 Individual Switches per Module £ Isolated Baseplate for Easy Heat Sinking £ Copper Baseplate Applications: £ Energy Saving Power Systems such as: £ High Frequency Type Power Systems such as: UPS; High Speed Motor Drives; Induction Heating; Welder; Robotics £ High Temperature Power Systems such as: 12/12 Rev. 2 Fans; Pumps; Consumer Appliances Power Electronics in Electric Vehicle and Aviation Systems 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID1210005 Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings SymbolQID1210005Units Junction Temperature Storage Temperature Tj –40 to 150 °C Tstg –40 to 150 °C Collector-Emitter Voltage (G-E Short) VCES 1200Volts Gate-Emitter Voltage (C-E Short) VGES ±20Volts Collector Current (TC = 25°C) IC 100*Amperes ICM 200*Amperes IE 80*Amperes Repetitive Peak Emitter Current (TC = 25°C, tp = 10ms, Half Sine Pulse)** IEM 455*Amperes Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) PC 730Watts Mounting Torque, M6 Mounting — 40 Weight — 270Grams Peak Collector Current Emitter Current** (TC = 25°C) Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) in-lb VISO 2500Volts IGBT Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V — — 1.0 mA IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 10mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 100A, VGE = 15V, Tj = 25°C — 5.0 6.5 Volts IC = 100A, VGE = 15V, Tj = 125°C — 5.0 — Volts VCC = 600V, IC = 100A, VGE = 15V — 450 — nC — — 16 nf — — 1.3 nf — — 0.3 nf Total Gate Charge QG Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Inductive Turn-on Delay Time td(on) VCC = 600V, IC = 100A, — — TBD ns Load Rise Time tr VGE1 = VGE2 = 15V, — — TBD ns Switch Turn-off Delay Time TimeFall Time VCE = 10V, VGE = 0V td(off) RG = 3.1Ω, — — TBD ns tf Inductive Load Switching Operation — — TBD ns * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector silicon carbide Schottky diode (FWDi). 2 12/12 Rev. 2 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID1210005 Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts Reverse Schottky Diode Characteristics, Tj = 25 °C unless otherwise specified Characteristics Diode Forward Voltage Diode Reverse Current Diode Capacitive Charge Symbol VFM IR QC Test Conditions Min. Typ. Max. Units IF = 80A, VGS = -5V — 1.6 2.0 Volts IF = 80A, VGS = -5V, Tj = 175°C — 2.5 3.2 Volts VR = 1200V — 140 800 μA VR = 1200, Tj = 150°C — 260 1600 μA VR = 1200V, IF = 80A, di/dt = 800A/μs — 520 — nC Test Conditions Min. Typ. Max. Units Per IGBT 1/2 Module, — — 0.17 °C/W — — 0.304 °C/W Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Symbol Rth(j-c)Q TC Reference Point Under Chips Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module, TC Reference TC Reference Point Under Chips Contact Thermal Resistance Rth(c-f) External Gate Resistance RG Internal Inductance Lint 12/12 Rev. 2 Per 1/2 Module, Thermal Grease Applied IGBT Part — °C/W 3.1— — 0.04 31 Ω — —nH 10 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID1210005 Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts OUTPUT CHARACTERISTICS (TYPICAL) 13 150 12 100 11 10 50 9 0 8 0 4 6 8 150 100 50 0 10 VGE = 10V Tj = 25°C Tj = 125°C 5 0 15 10 20 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 9 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 2 10 VGE = 15V Tj = 25°C Tj = 125°C 8 7 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 15 6 5 4 3 2 1 0 0 50 100 150 COLLECTOR-CURRENT, IC, (AMPERES) 4 200 14 VGE = 20V Tj = 25°C COLLECTOR CURRENT, IC, (AMPERES) 200 TRANSFER CHARACTERISTICS (TYPICAL) 200 Tj = 25°C IC = 200A 8 6 IC = 100A 4 IC = 40A 2 0 6 8 10 12 14 16 18 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 12/12 Rev. 2 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID1210005 Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts FREE-WHEEL SCHOTTKY DIODE FORWARD CHARACTERISTICS (TYPICAL) FREE-WHEEL SCHOTTKY DIODE REVERSE CHARACTERISTICS (TYPICAL) 160 1600 128 REVERSE CURRENT, IR, (μA) FORWARD CURRENT, IF, (μA) Tj = 25°C Tj = 75°C Tj = 125°C 96 Tj = 175°C 64 32 1280 Tj = 175°C 960 Tj = 125°C 640 Tj = 75°C 320 Tj = 25°C CAPACITANCE, Cies, Coes, Cres, (nF) 102 0 1 2 3 4 0 5 0 500 1000 REVERSE VOLTAGE, VR, (VOLTS) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Cies 101 Coes 100 102 TBD 101 VCC = 600V VGE = 15V RG = 3.1Ω Tj = 125°C Inductive Load Cres 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 12/12 Rev. 2 2000 103 VGE = 0V 10-1 10-1 1500 FORWARD VOLTAGE, VF, (VOLTS) SWITCHING TIME, (ns) 0 100 101 102 103 COLLECTOR CURRENT, IC, (AMPERES) 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID1210005 Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) 16 VCC = 400V VCC = 600V 12 8 4 0 SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) IC = 100A 102 101 100 200 300 400 500 600 700 0 VCC = 600V VGE = 15V RG = 3.1Ω Tj = 125°C Inductive Load C Snubber at Bus ESW(on) ESW(off) 100 10-1 101 102 103 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (TYPICAL) 102 TBD 101 GATE RESISTANCE, RG, (Ω) 6 TBD GATE CHARGE, QG, (nC) VCC = 600V VGE = ±15V IC = 100A Tj = 125°C Inductive Load C Snubber at Bus ESW(on) ESW(off) 100 100 101 REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) GATE-EMITTER VOLTAGE, VGE, (VOLTS) 20 SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) GATE CHARGE VS. VGE 102 TBD 101 100 101 VCC = 600V VGE = ±15V RG = 3.1Ω Tj = 125°C Inductive Load C Snubber at Bus 102 103 EMITTER CURRENT, IE, (AMPERES) 12/12 Rev. 2 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) 102 VCC = 600V VGE = ±15V IE = 100A Tj = 125°C Inductive Load C Snubber at Bus 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) QID1210005 Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts 100 10-1 TBD 10-2 100 100 101 GATE RESISTANCE, RG, (Ω) 12/12 Rev. 2 102 10-3 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 10-2 10-1 100 101 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.17°C/W (IGBT) Rth(j-c) = 0.304°C/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) 7