CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier enabling very wide bandwidths to be achieved in a small footprint screw-down package featuring a CopperTungsten heat-sink. PN: CMPA2560 025F Package Type : 780019 Typical Performance Over 2.5-6.0 GHz (TC = 25˚C) Parameter 2.5 GHz 4.0 GHz 6.0 GHz Units Gain 27.5 24.3 23.1 dB Saturated Output Power, PSAT1 35.8 37.5 25.6 W Power Gain @ POUT 43 dBm 23.1 20.9 16.3 dB PAE @ POUT 43 dBm 31.5 32.8 30.7 % Note : PSAT is defined as the RF output power where the device starts to draw positive gate current in the range of 7-13 mA. 1 Features Applications • 24 dB Small Signal Gain • Ultra Broadband Amplifiers • 25 W Typical PSAT • Fiber Drivers • Operation up to 28 V • Test Instrumentation • High Breakdown Voltage • EMC Amplifier Drivers 15 Rev 3.0 – May 20 • High Temperature Operation Figure 1. Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Symbol Rating Drain-source Voltage Parameter VDSS 84 Units VDC Gate-source Voltage VGS -10, +2 VDC Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Forward Gate Current IG 13 mA Screw Torque Thermal Resistance, Junction to Case T 40 in-oz RθJC 2.5 ˚C/W Electrical Characteristics (Frequency = 2.5 GHz to 6.0 GHz unless otherwise stated; TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage V(GS)TH -3.8 -3.0 -2.3 V Gate Quiescent Voltage V(GS)Q – -2.7 – VDC Drain-Source Breakdown Voltage VBD 84 100 – V VGS = -8 V, ID = 20 mA Saturated Drain Current1 IDC 8.0 9.7 – A VDS = 6.0 V, VGS = 2.0 V Small Signal Gain S21 19.5 24 – dB VDD = 28 V, ID = 1200 mA Input Return Loss S11 – -8 -5 dB VDD = 28 V, ID = 1200 mA Output Return Loss S22 – -8 -3 dB VDD = 28 V, ID = 1200 mA Power Output1 POUT 22.0 30 – W VDD = 28 V, ID = 1200 mA, PIN = 26 dBm, Freq = 4.0 GHz Power Output2 POUT 12.5 17 – W VDD = 28 V, ID = 1200 mA, PIN = 26 dBm, Freq = 5.0 GHz Power Output3 POUT 15.5 20 – W VDD = 28 V, ID = 1200 mA, PIN = 26 dBm, Freq = 6.0 GHz Power Added Efficiency1 PAE 34 40 – % VDD = 28 V, ID = 1200 mA, PIN = 26 dBm, Freq = 4.0 GHz Power Added Efficiency2 PAE 20 26 – % VDD = 28 V, ID = 1200 mA, PIN = 26 dBm, Freq = 5.0 GHz Power Added Efficiency3 PAE 24 30 – % VDD = 28 V, ID = 1200 mA, PIN = 26 dBm, Freq = 6.0 GHz Power Gain1 GP 17.5 18.8 – dB VDD = 28 V, ID = 1200 mA, PIN = 26 dBm, Freq = 4.0 GHz Power Gain2 GP 15.0 16.3 – dB VDD = 28 V, ID = 1200 mA, PIN = 26 dBm, Freq = 5.0 GHz Power Gain3 GP 16.0 17.0 – dB VDD = 28 V, ID = 1200 mA, PIN = 26 dBm, Freq = 6.0 GHz VSWR – – 5:1 Y No damage at all phase angles, VDD = 28 V, IDQ = 1200 mA, PIN = 26 dBm DC Characteristics RF Characteristics VDS = 10 V, ID = 20 mA VDD = 28 V, ID = 1200 mA 2 Output Mismatch Stress Notes: 1 Scaled from PCM data. 2 All data CW tested in CMPA2560025F-AMP. Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 2 CMPA2560025F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance 30 0 28 -2 26 -4 24 -6 22 -8 Gain (dB) Gain (dB) Small Signal Gain vs Frequency Input & Output Return Losses vs Frequency 20 18 S22 Typical -10 -12 16 -14 14 -16 12 -18 10 S11 Typical -20 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 2.0 2.5 3.0 3.5 4.0 Frequency (GHz) 4.5 5.0 5.5 6.0 6.5 Frequency (GHz) Power Gain vs Frequency Gain vs Output Power as a Function of Frequency 30 30 28 28 Output Power = 44 dBm 26 Output Power = 43 dBm 24 24 22 22 Gain (dB) Power Gain (dB) 26 20 18 20 2.5 GHz 18 4.0 GHz 16 16 14 14 12 12 6.0 GHz 10 10 2.0 2.5 3.0 3.5 4.0 4.5 Frequency (GHz) 5.0 5.5 6.0 6.5 18 22 26 30 Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 3 CMPA2560025F Rev 3.0 34 38 42 46 Output Power (dBm) Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Saturated Output Power Performance (PSAT) vs Frequency 50 Frequency (GHz) PSAT (dBm) PSAT (W) 2.5 45.54 35.8 47 3.0 44.43 27.7 46 3.5 45.52 35.7 45 4.0 45.74 37.5 44 4.5 44.82 30.4 43 5.0 45.08 32.2 5.5 45.07 32.1 6.0 44.08 25.6 Saturated Output Power, PSAT (dBm) 49 48 Typical Psat (dBm) 42 41 40 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 Frequency (GHz) Note: PSAT is defined as the RF output power where the device starts to draw positive gate current in the range of 7-13 mA. 45% 45% 40% 40% 2.5 GHz 35% Power Added Efficiency, PAE (%) Power Added Efficiency, PAE (%) Power Added Efficiency vs Output Power PAE at 43 dBm and 44 dBm Output as a Function of Frequency Power vs Frequency 4.0 GHz 30% 6.0 GHz 25% 20% 15% 10% 5% 35% 30% 25% 20% 15% PAE 44 dBm PAE 43 dBm 10% 5% 0% 18 20 22 24 26 28 30 32 34 36 Output Power, POUT (dBm) 38 40 42 44 46 0% 2.0 2.5 3.0 3.5 4.0 Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 4 CMPA2560025F Rev 3.0 4.5 5.0 5.5 6.0 6.5 Frequency (GHz) Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance 2ND Harmonic vs Output Power as a Function of Frequency 0 IM3 vs Total Average Power as a Function of Frequency 0 2.5 GHz -10 -5 4.0 GHz 6.0 GHz 4.0 GHz -15 -20 6.0 GHz -20 -30 IM3 (dBc) 2ND Harmonic (dBc) 2.5 GHz -10 -40 -25 -30 -35 -40 -50 -45 -50 -60 -55 -60 -70 22 24 26 28 30 32 34 36 38 40 42 44 46 22 24 26 28 30 32 34 36 38 40 42 44 Total Average Output Power (dBm) Output Power, POUT (dBm) Gain at POUT of 40 dBm at 25°C & 75°C vs Frequency 30 25 Gain (dB) 20 15 Ambient (25°C) 10 Hot (75°C) 5 0 2.5 2.8 3.1 3.4 3.7 4.0 Frequency (GHz) Note: The temperature coefficient is -0.05 dB/°C Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 5 CMPA2560025F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf General Device Information The CMPA2560025F is a two stage GaN HEMT MMIC Power Amplifier, which operates between 2.5- 6.0 GHz. The amplifier typically provides 25 dB of small signal gain and 25 W saturated output power with an associated power added efficiency of better than 30 %. The wideband amplifier’s input and output are internally matched to 50 Ohm. The amplifier requires bias from dedicated ports. The RF-input and output both require an external DC-block. DC voltage should not be applied to the RF output pin due to the internal matching elements. The two gate pins, G1 and G2, are internally connected so it is sufficient to apply bias to only one of them. The drain pins, D1 and D2, should both be connected to the drain supply. The component has internal DC-decoupling on the gate and drain pins, 1840pF and 920pF respectively. The test fixture also provides extra decoupling capacitors on all supply lines. Details of these components can be found on the bill of materials. The CMPA2560025F is provided in a lead-less package format. The input and output connections are gold plated to enable gold bond wire attach at the next level assembly. The measurements in this data sheet were taken on devices wire-bonded to the test fixture with 2 mil gold bond wires. All losses associated with the test fixture are included in the measurements. Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 6 CMPA2560025F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CMPA2560025F CW Power Dissipation De-rating Curve CMPA2560025F Derating 70 DC Power Dissipation (W) 60 50 40 30 20 Note 1 10 0 0 50 100 150 200 250 Maximum Case Temperature (C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 7 CMPA2560025F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CMPA2560025F-AMP Demonstration Amplifier Circuit CMPA2560025F-AMP Demonstration Amplifier Circuit Outline Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 8 CMPA2560025F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CMPA2560025F-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty J1,J2 CONNECTOR, SMA, AMP1052901-1 2 J3 HEADER, RT. PLZ. 1, CEN LK, 5 POS 1 C1,C2,C3 CAP, 2400 pF, BROADBAND BLOCK, C08BL242X-5UNX0T 2 3 C4,C5,C6 CAP, 0.1 UF, +/- 10 % , 0805 3 RES, 0 OHM, 1206 1 PCB, TACONIC, RF-35-0100-CH/CH 1 CMPA2560025F 1 R1 Q1 Notes 1 The CMPA2560025F is connected to the PCB with 2.0 mil Au bond wires. 2 An external DC Block is required on the input and output. Product Dimensions CMPA2560025F (Package Type — 780019) PRELIMINARY Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 9 CMPA2560025F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CMPA25650025F GaN HEMT Each Test board without GaN HEMT Each Test board with GaN HEMT installed Each CMPA2560025F-TB CMPA2560025F-AMP Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 10 CMPA2560025F Rev 3.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications, and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE logo are registered trademarks of Cree, Inc. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 11 CMPA2560025F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf