ROITHNER RLT780

ROITHNER LASERTECHNIK
SCHOENBRUNNER STRASSE 7, VIENNA, AUSTRIA
TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44
[email protected] www.roithner-laser.com
RLT780-1000G
TECHNICAL DATA
High Power Infrared Laser Diode
NOTE!
Lasing mode structure: multi mode
Lasing wavelength: typ. 785 nm
Optical power: 1 W
Package: 9 mm (SOT-148)
LASERDIODE
MUST BE COOLED!
PIN CONNECTION:
1) Laser diode cathode
2) Laser diode anode and photodiode cathode
3) Photodiode anode
Absolute Maximum Ratings (Tc = 25°C)
CHARACTERISTIC
SYMBOL
Optical Output Power
Po
LD Reverse Voltage
VR(LD)
PD Reverse Voltage
VR(PD)
Operating Temperature
TC
Storage Temperature
TSTG
RATING
1.2
1.5
10
-20 .. +30
-40 .. +70
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION
Emitting Aperture
A
cw
Optical Output Power
Po
multi mode
Threshold Current
Ith
cw
Operation Current
Iop
Po = 1 W
Forward Voltage
Uf
Po = 1 W
Lasing Wavelength
P
λp
o = 1 W
Spectral Width FWHM
Po = 1 W
∆λ
Beam Divergence
Po = 1 W
θ//
Beam Divergence
Po = 1 W
θ⊥
Monitor Current
Im
Po = 1 W
MIN
UNIT
W
V
V
°C
°C
TYP
MAX
1 x 100
390
1.2
1.8
780
0.3
100
1
420
1.3
1.9
785
1.0
25
30
500
450
1.4
2.0
790
1.5
1500
UNIT
µm²
W
mA
A
V
nm
nm
°
°
µA