ROITHNER LASERTECHNIK A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 e-mail: [email protected] http://www.roithner-laser.com RLT91500G TECHNICAL DATA High Power Infrared Laserdiode NOTE! Structure: AlGaAs quantum well Lasing wavelength: 915 nm typ., multimode Optical power: 500 mW, 1 x 50 µm² aperture Package: 9 mm LASERDIODE MUST BE COOLED! PIN CONNECTION: 1) Laser diode cathode 2) Laser diode anode and photodiode cathode 3) Photodiode anode Maximum Ratings (Tc=25°C) CHARACTERISTIC SYMBOL Optical Output Power Po LD Reverse Voltage VR(LD) PD Reverse Voltage VR(PD) Operating Temperature TC Storage Temperature TSTG RATING 500 2 30 -40 .. +50 -70 .. +85 Optical-Electrical Characteristics (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Optical Output Power Po cw Threshold Current Ith cw Operation Current Iop Po = 500 mW Operation Voltage Uop Po = 500 mW Lasing Wavelength Po = 500 mW λp Spectral Width FWHM Po = 500 mW ∆λ Beam Divergence Po = 500 mW θ// Beam Divergence Po = 500 mW θ⊥ Differential Efficiency dPo/dIop Po = 500 mW Monitor Current Im Po = 500 mW MIN 80 500 1.6 910 35 0.8 150 UNIT mW V V °C °C TYP MAX UNIT 500 mW 100 120 mA 600 700 mA 1.8 2.0 V 915 920 nm 10 nm 8 ° 40 45 ° 1.0 1.2 mW/mA 350 800 µA