ROITHNER RLT91500G

ROITHNER LASERTECHNIK
A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA
TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44
e-mail: [email protected] http://www.roithner-laser.com
RLT91500G
TECHNICAL DATA
High Power Infrared Laserdiode
NOTE!
Structure: AlGaAs quantum well
Lasing wavelength: 915 nm typ., multimode
Optical power: 500 mW, 1 x 50 µm² aperture
Package: 9 mm
LASERDIODE
MUST BE COOLED!
PIN CONNECTION:
1) Laser diode cathode
2) Laser diode anode and photodiode cathode
3) Photodiode anode
Maximum Ratings (Tc=25°C)
CHARACTERISTIC
SYMBOL
Optical Output Power
Po
LD Reverse Voltage
VR(LD)
PD Reverse Voltage
VR(PD)
Operating Temperature
TC
Storage Temperature
TSTG
RATING
500
2
30
-40 .. +50
-70 .. +85
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION
Optical Output Power
Po
cw
Threshold Current
Ith
cw
Operation Current
Iop
Po = 500 mW
Operation Voltage
Uop
Po = 500 mW
Lasing Wavelength
Po = 500 mW
λp
Spectral Width FWHM
Po = 500 mW
∆λ
Beam Divergence
Po = 500 mW
θ//
Beam Divergence
Po = 500 mW
θ⊥
Differential Efficiency
dPo/dIop
Po = 500 mW
Monitor Current
Im
Po = 500 mW
MIN
80
500
1.6
910
35
0.8
150
UNIT
mW
V
V
°C
°C
TYP MAX UNIT
500
mW
100 120
mA
600 700
mA
1.8
2.0
V
915 920
nm
10
nm
8
°
40
45
°
1.0
1.2 mW/mA
350 800
µA