RLT808500G TECHNICAL DATA High Power Infrared Laserdiode Structure: High Efficiency MOVCD Quantum Well Design Lasing wavelength: 808 nm typ. NOTE! Output power: 500 mW, cw LASERDIODE Package: 9 mm MUST BE COOLED! PIN CONNECTION: 1) Laser diode cathode 2) Laser diode anode and photodiode cathode 3) Photodiode anode Absolute Maximum Ratings (Tc=25°C) CHARACTERISTIC SYMBOL Optical Output Power Po LD Reverse Voltage VR(LD) PD Reverse Voltage VR(PD) Operating Temperature TC Storage Temperature TSTG RATING 550 2 30 -10 .. +40 -40 .. +80 Optical-Electrical Characteristics (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Optical Output Power Po kink free Threshold Current Ith cw Operation Current Iop Po = 500 mW Operation Voltage Vop Po = 500 mW Slope Efficiency cw η Lasing Wavelength Po = 500 mW λ Po = 500 mW Beam Divergence θ// Beam Divergence Po = 500 mW θ⊥ Lasing Aperture A Po = 500 mW Recommended Operating Top cw Temperature Monitor Current 10.08.2010 Im Po = 500 mW rlt808500g.doc UNIT mW V V °C °C MIN TYP MAX 500 150 180 650 700 750 1.85 2.0 0.8 1.0 1.1 805 808 811 5 9 12 30 35 45 50x1 20 25 40 UNIT mW mA mA V W/A nm ° ° µm² °C 0.6 mA 1.5 1 of 1