BVDSS = 200 V RDS(on) typ = 0.145Ω HFP640 ID = 18 A 200V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 37 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.145 Ω (Typ.) @VGS=10V 1 2 3 1.Gate 2. Drain 3. Source 100% Avalanche Tested Absolute Maximum Ratings Symbol TC=25℃ unless otherwise specified Parameter Value Units 200 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25℃) 18 A Drain Current – Continuous (TC = 100℃) 11.4 A IDM Drain Current – Pulsed 72 A VGS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 250 mJ IAR Avalanche Current (Note 1) 18 A EAR Repetitive Avalanche Energy (Note 1) 13.9 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD Power Dissipation (TC = 25℃) - Derate above 25℃ (Note 1) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 139 W 1.11 W/℃ -55 to +150 ℃ 300 ℃ Thermal Resistance Characteristics Typ. Max. RθJC Symbol Junction-to-Case Parameter -- 0.9 RθCS Case-to-Sink 0.5 -- RθJA Junction-to-Ambient -- 62.5 Units ℃/W ◎ SEMIHOW REV.A0,July 2005 HFP640 July 2005 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.0 -- 4.0 V Static Drain-Source On-Resistance VGS = 10 V, ID = 9.0 A -- 0.145 0.18 Ω VGS = 0 V, ID = 250 ㎂ 200 -- -- V ID = 250 ㎂, Referenced to25℃ -- 0.2 -- V/℃ VDS = 200 V, VGS = 0 V -- -- 1 ㎂ VDS = 160 V, TC = 125℃ -- -- 10 ㎂ Off Characteristics BVDSS Drain-Source Breakdown Voltage ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 ㎁ IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 ㎁ -- 1300 1700 ㎊ -- 175 230 ㎊ -- 26 34 ㎊ -- 20 40 ㎱ -- 150 300 ㎱ -- 150 300 ㎱ -- 110 220 ㎱ -- 37 48 nC -- 5.5 -- nC -- 13 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 100 V, ID = 18 A, RG = 25 Ω (Note 4,5) VDS = 160 V, ID = 18 A, VGS = 10 V (Note 4,5) Gate-Drain Charge Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 18 ISM Pulsed Source-Drain Diode Forward Current -- -- 72 VSD Source-Drain Diode Forward Voltage IS = 18 A, VGS = 0 V -- -- 1.5 V trr Reverse Recovery Time -- 200 -- ㎱ Qrr Reverse Recovery Charge IS = 18 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) -- 1.50 -- μC A Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=1.16mH, IAS=18A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤18A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,July 2005 HFP640 Electrical Characteristics TC=25 °C HFP640 Typical Characteristics VGS 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V Bottom: 5.0V ID, Drain Current [A] ID, Drain Current [A] Top: ※ Notes 1. 250us Pulse Test 2. Tc=25℃ ※ Notes 1. VDS=40V 2. 250us Pulse Test VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On Region Characteristics RDS(ON)[Ω], Drain-Source On-Resistance IDR, Reverse Drain Current [A] Figure 2. Transfer Characteristics ※ Notes 1. VGS=0V 2. 250us Pulse Test ※ Notes : TJ=25℃ ID, Drain Current [A] VSD, Source-Drain Voltage [V] Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 2500 Ciss 1500 Coss 1000 ※ Note ; 1. VGS = 0 V 2. f = 1 MHz 500 Crss VDS = 40V 10 VGS, Gate-Source Voltage [V] 2000 Capacitances [pF] 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VDS = 100V VDS = 160V 8 6 4 2 * Note : ID = 18.0 A 0 -1 10 0 10 1 10 0 0 8 16 24 32 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 40 ◎ SEMIHOW REV.A0,July 2005 HFP640 Typical Characteristics (continued) 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 * Note : 1. VGS = 0 V 0.9 2. ID = 250 μA 0.8 -100 -50 0 50 100 2.5 2.0 1.5 1.0 ∗ Note : 0.5 1. VGS = 10 V 2. ID = 1.0 A 150 0.0 -100 200 -50 0 100 μs 16 ID, Drain Current [A] 10 ms 100 ms DC 0 10 -1 10 * Notes : o 1. TC = 25 C 12 8 4 o 2. TJ = 150 C 3. Single Pulse -2 10 0 1 10 0 25 2 10 10 50 75 Figure 9. Maximum Safe Operating Area 10 100 125 150 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs Case Temperature 0 D = 0 .5 Zθ JC(t), Thermal Response ID, Drain Current [A] 1 ms 10 200 20 Operation in This Area is Limited by R DS(on) 1 150 Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 2 100 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] 10 50 o o 0 .2 10 ※ N o te s : 1 . Z θ J C( t) = 0 .9 ℃ /W M a x . 2 . D u ty F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C( t) -1 0 .1 0 .0 5 PDM 0 .0 2 0 .0 1 10 10 t1 s in g le p u ls e -2 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [ s e c ] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,July 2005 HFP640 Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% td(on) tr td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time ◎ SEMIHOW REV.A0,July 2005 HFP640 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,July 2005 HFP640 Package Dimension TO-220 (A) 9.90±0.20 ±0 6.50±0.20 1.30±0.20 9.19±0.20 2.80±0.20 1.27±0.20 1.52±0.20 4.50±0.20 2.40±0.20 3.02±0.20 13.08±0.20 15.70±0.20 . φ3 60 0 .2 0.80±0.20 2.54typ 2.54typ 0.50±0.20 ◎ SEMIHOW REV.A0,July 2005 HFP640 TO-220 (B) ±0.20 4.57±0.20 84 6.30±0.20 1.27±0.20 9.14±0.20 2.74±0.20 15.44±0.20 . φ3 0 .2 ±0 1.27±0.20 2.67±0.20 13.28±0.20 2.67±0.20 2.54typ 2.54typ 0.81±0.20 0.40±0.20 ◎ SEMIHOW REV.A0,July 2005