HFP640 - SemiHow

BVDSS = 200 V
RDS(on) typ = 0.145ȍ
HFP640
ID = 18 A
200V N-Channel MOSFET
TO-220
FEATURES
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Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 37 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 0.145 ȍ (Typ.) @VGS=10V
100% Avalanche Tested
Absolute Maximum Ratings
Symbol
1
2
3
1.Gate 2. Drain 3. Source
TC=25୅ unless otherwise specified
Parameter
Value
Units
200
V
VDSS
Drain-Source Voltage
ID
Drain Current
– Continuous (TC = 25ఁ͚
18
A
Drain Current
– Continuous (TC = 100ఁ͚
11.4
A
IDM
Drain Current
– Pulsed
72
A
VGS
Gate-Source Voltage
ρͤ͡
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
250
mJ
IAR
Avalanche Current
(Note 1)
18
A
EAR
Repetitive Avalanche Energy
(Note 1)
13.9
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
5.5
V/ns
PD
Power Dissipation (TC = 25ఁ͚
͞ ͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ
(Note 1)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
139
W
1.11
W/ఁ
-55 to +150
ఁ
300
ఁ
Thermal Resistance Characteristics
Typ.
Max.
RșJC
Symbol
Junction-to-Case
Parameter
--
0.9
RșCS
Case-to-Sink
0.5
--
RșJA
Junction-to-Ambient
--
62.5
Units
ఁ͠Έ
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͡͡
HFP640
July 2005
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 Ꮃ
2.0
--
4.0
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 9.0 A
--
0.145
0.18
‫ש‬
VGS = 0 V, ID = 250 Ꮃ
200
--
--
V
ID = 250 Ꮃ͑͝΃ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ
--
0.2
--
·͠ఁ
VDS = 200 V, VGS = 0 V
--
--
1
Ꮃ
VDS = 160 V, TC = 125ఁ
--
--
10
Ꮃ
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ԩBVDSS Breakdown Voltage Temperature
Coefficient
/ԩTJ
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
--
100
Ꮂ
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
Ꮂ
--
1300
1700
Ꮔ
--
175
230
Ꮔ
--
26
34
Ꮔ
--
20
40
Ꭸ
--
150
300
Ꭸ
--
150
300
Ꭸ
--
110
220
Ꭸ
--
37
48
Οʹ
--
5.5
--
Οʹ
--
13
--
Οʹ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDS = 100 V, ID = 18 A,
RG = 25 ‫ש‬
͙ͿΠΥΖ͚͑ͥͦ͝
VDS = 160 V, ID = 18 A,
VGS = 10 V
͙ͿΠΥΖ͚͑ͥͦ͝
Gate-Drain Charge
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
18
ISM
Pulsed Source-Drain Diode Forward Current
--
--
72
VSD
Source-Drain Diode Forward Voltage
IS = 18 A, VGS = 0 V
--
--
1.5
V
trr
Reverse Recovery Time
--
200
--
Ꭸ
Qrr
Reverse Recovery Charge
IS = 18 A, VGS = 0 V
diF/dt = 100 A/ȝs (Note 4)
--
1.50
--
ȝC
A
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=1.16mH, IAS=18A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”18A, di/dt”300A/ȝs, VDD”BVDSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ” 300ȝs, Duty Cycle ” 2%
5. Essentially Independent of Operating Temperature
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͡͡
HFP640
Electrical Characteristics TC=25 qC
HFP640
Typical Characteristics
VGS
15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
Bottom:
5.0V
ID, Drain Current [A]
ID, Drain Current [A]
Top:
୔ Notes
1. 250us Pulse Test
2. Tc=25୅
୔ Notes
1. VDS=40V
2. 250us Pulse Test
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
RDS(ON)[Ÿ],
Drain-Source On-Resistance
IDR, Reverse Drain Current [A]
Figure 2. Transfer Characteristics
୔ Notes
1. VGS=0V
2. 250us Pulse Test
୔ Notes : TJ=25୅
ID, Drain Current [A]
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
2500
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Capacitances [pF]
Ciss
1500
Coss
1000
୔ Note ;
1. VGS = 0 V
2. f = 1 MHz
500
Crss
VDS = 40V
10
VGS, Gate-Source Voltage [V]
2000
VDS = 100V
VDS = 160V
8
6
4
2
* Note : ID = 18.0 A
0
-1
10
0
0
10
1
10
0
8
16
24
32
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
40
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͡͡
HFP640
Typical Characteristics
(continued)
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
* Note :
1. VGS = 0 V
0.9
2. ID = 250 PA
0.8
-100
-50
0
50
100
2.5
2.0
1.5
1.0
Note :
0.5
1. VGS = 10 V
2. ID = 1.0 A
150
0.0
-100
200
-50
0
150
200
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
20
Operation in This Area
is Limited by R DS(on)
2
100
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
10
50
o
o
100 Ps
16
10
ID, Drain Current [A]
1
10 ms
100 ms
DC
0
10
-1
10
* Notes :
o
1. TC = 25 C
12
8
4
o
2. TJ = 150 C
3. Single Pulse
-2
10
0
1
10
0
25
2
10
10
50
75
Figure 9. Maximum Safe Operating Area
10
100
125
150
TC, Case Temperature [୅]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs Case Temperature
0
D = 0 .5
Zș JC(t), Thermal Response
ID, Drain Current [A]
1 ms
0 .2
10
୔ N o te s :
1 . Z ș J C( t) = 0 .9 ୅ /W M a x .
2 . D u ty F a c t o r , D = t 1 /t 2
3 . T J M - T C = P D M * Z ș J C( t)
-1
0 .1
0 .0 5
PDM
0 .0 2
0 .0 1
10
10
t1
s in g le p u ls e
-2
-5
10
-4
10
-3
10
-2
10
-1
t2
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a tio n [ s e c ]
Figure 11. Transient Thermal Response Curve
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͡͡
HFP640
Fig 12. Gate Charge Test Circuit & Waveform
50KŸ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͡͡
HFP640
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͡͡
HFP640
Package Dimension
{vTYYWGOhP
9.90±0.20
±0
6.50±0.20
1.30±0.20
9.19±0.20
2.80±0.20
1.27±0.20
1.52±0.20
4.50±0.20
60
2.40±0.20
3.02±0.20
13.08±0.20
15.70±0.20
.
ij3
0
.2
0.80±0.20
2.54typ
2.54typ
0.50±0.20
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͡͡
HFP640
{vTYYWGOiP
±0.20
0
.2
±0
84
6.30±0.20
1.27±0.20
9.14±0.20
2.74±0.20
15.44±0.20
.
ij3
4.57±0.20
1.27±0.20
2.67±0.20
13.28±0.20
2.67±0.20
0.81±0.20
2.54typ
2.54typ
0.40±0.20
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͡͡