BVDSS = 650 V RDS(on) typ = 4.5 Ω HFS2N65 ID = 1.8 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design 1 Superior Avalanche Rugged Technology Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4.5 Ω (Typ.) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings Symbol TC=25℃ unless otherwise specified Parameter Value Units 650 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25℃) 1.8* A Drain Current – Continuous (TC = 100℃) 1.1* A IDM Drain Current – Pulsed 7.2* A VGS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 120 mJ IAR Avalanche Current (Note 1) 1.8 A EAR Repetitive Avalanche Energy (Note 1) 5.4 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD Power Dissipation (TC = 25℃) - Derate above 25℃ 23 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds (Note 1) 0.18 W/℃ -55 to +150 ℃ 300 ℃ * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Typ. Max. RθJC Symbol Junction-to-Case Parameter -- 5.5 RθJA Junction-to-Ambient -- 62.5 Units ℃/W ◎ SEMIHOW REV.A0,July 2007 HFS2N65 July 2007 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.5 -- 4.5 V Static Drain-Source On-Resistance VGS = 10 V, ID = 0.9 A -- 4.5 6.0 Ω VGS = 0 V, ID = 250 ㎂ 650 -- -- V ID = 250 ㎂, Referenced to25℃ -- 0.65 -- V/℃ VDS = 650 V, VGS = 0 V -- -- 1 ㎂ VDS = 520 V, TC = 125℃ -- -- 10 ㎂ Off Characteristics BVDSS Drain-Source Breakdown Voltage ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 ㎁ IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 ㎁ -- 330 430 ㎊ -- 40 50 ㎊ -- 8 10.5 ㎊ -- 15 30 ㎱ -- 40 80 ㎱ -- 40 80 ㎱ -- 30 60 ㎱ -- 9.0 11.5 nC -- 1.9 -- nC -- 3.8 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 325 V, ID = 1.8 A, RG = 25 Ω (Note 4,5) VDS = 520V, ID = 1.8 A, VGS = 10 V (Note 4,5) Gate-Drain Charge Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 1.8 ISM Pulsed Source-Drain Diode Forward Current -- -- 7.2 VSD Source-Drain Diode Forward Voltage IS = 1.8 A, VGS = 0 V -- -- 1.4 V trr Reverse Recovery Time -- 220 -- ㎱ Qrr Reverse Recovery Charge IS = 1.8 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) -- 1.1 -- μC A Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=68mH, IAS=1.8A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤1.8A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,July 2007 HFS2N65 Electrical Characteristics TC=25 °C HFS2N65 Typical Characteristics VGS 15 V 10 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ID , Drain Current [A] Top : 100 10-1 * Note : 1. 250μ s Pulse Test 2. TC = 25oC 10-2 -1 10 100 101 VDS , Drain-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics RDS(on) , [Ω] Drain-Source On-Resistance 18 15 VGS = 10V 12 VGS = 20V 9 6 3 * Note : TJ = 25oC 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 ID , Drain Current [A] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 450 12 350 Ciss 300 250 Coss 200 150 ※ Note ; 1. VGS = 0 V 2. f = 1 MHz Crss 100 50 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 400 Capacitances [pF] Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature VDS = 130V 10 VDS = 325V VDS = 520V 8 6 4 2 * Note : ID = 1.8 A 0 -1 10 0 0 10 1 10 0 1 2 3 4 5 6 7 8 9 10 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ◎ SEMIHOW REV.A0,July 2007 (continued) 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 * Note : 1. VGS = 0 V 2. ID = 250 µA 0.9 0.8 -100 HFS2N65 Typical Characteristics -50 0 50 100 150 2.5 2.0 1.5 1.0 * Note : 1. VGS = 10 V 2. ID = 0.9 A 0.5 0.0 -100 200 -50 0 50 100 150 TJ, Junction Temperature [ C] TJ, Junction Temperature [oC] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature o 200 2.0 Operation in This Area is Limited by R DS(on) ID, Drain Current [A] 1.5 100 µs 1 ms 100 10 ms 100 ms DC 10-1 * Notes : 1. TC = 25 oC 1.0 0.5 2. TJ = 150 oC 3. Single Pulse 10-2 100 101 102 0.0 25 103 50 75 100 125 150 TC, Case Temperature [oC] VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature D=0.5 Zθ JC(t), Thermal Response ID, Drain Current [A] 101 0 10 0.2 * Notes : 1. ZθJC(t) = 5.5 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.1 0.05 10-1 0.02 PDM 0.01 t1 single pulse 10-2 10-5 10-4 10-3 10-2 10-1 t2 100 101 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,July 2007 HFS2N65 Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time ◎ SEMIHOW REV.A0,July 2007 HFS2N65 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,July 2007 HFS2N65 Package Dimension TO-220F ±0.20 ±0.20 0 0.2 2.54±0.20 6.68±0.20 0.70±0.20 12.42±0.20 3.30±0.20 2.76±0.20 1.47max 9.75±0.20 15.87±0.20 φ 8± 1 . 3 0.80±0.20 0.50±0.20 2.54typ 2.54typ ◎ SEMIHOW REV.A0,July 2007