SemiWell Semiconductor SBW3320 Switch Mode series NPN silicon Power Transistor Symbol Features ◆ High voltage, high speed power switching ◆ Low VCE(sat) 1.Base General Description This device is designed for high voltage, high speed switching ○ 2.Collector ○ 3.Emitter ○ TO-3P characteristic required such as switching regulator, inverters, motor controls. 1 . 2 3 Absolute Maximum Ratings (TJ = 25℃ unless otherwise specified) Parameter Symbol Maximum rating Unit Collector-Base Voltage VCBO 500 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current(DC) IC 15 A Base Current IB 5 A Collector Dissipation(Tc=25℃) PC 80 W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -65 ~ 150 ℃ 1/4 Jun 2007. Rev. 0 Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved SBW3320 Electrical Characteristics ( TC = 25℃ Unless otherwise noted) Parameter Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Symbol VCEO VCEO(SUS) Test Condition Min Typ Max Unit IC=10mA, IB=0 400 V IC=0.2A 400 V Collector Cut-off Current ICBO VCB=500V, IE=0 1 mA Emitter Cutoff Current IEBO VEB=7V, IC=0 1 mA DC Current Gain hFE VCE=5V, IC=6A 40 - VCE(SAT) IC=6A, IB=1.2A 1 V VBE(SAT) IC=6A, IB=1.2A 1.5 V 4 ㎲ 0.8 ㎲ Collector-Emitter Saturation Voltage Base-Emitter Voltage Storage Time Fall Time 2/4 Saturation tSTG tf VCC=5V, IC=0.5A (UI9600) 10 1 SBW3320 Fig. 1 Static Characteristics Fig. 2 DC Current Gain hfe DC Current IC(A) Collector Current VCE(V) Collector Emitter Voltage IC(A) Collector Current Fig. 3 Saturation Voltage Fig. 4 Safe Operation Area IC(A) Collector Current VBE(S) , VCE(S), Saturation Voltage IC(A) Collector Current VCE(V) Collector Emitter Voltage Fig. 5 Power Derating 100 90 PC(W) Power Dissipation 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 TC(℃) Case Temperature 3/4 SBW3320 TO-3P Package Dimension corresponding symbol A(mm) 15.60±0.20 A1(mm) 13.60±0.20 A2(mm)dia. 9.60±0.20 B(mm) 19.90±0.20 B1(mm) 13.90±0.20 B2(mm) 12.76±0.20 B3(mm) 3.80±0.20 C(mm) 20.00±0.30 C1(mm) 3.50±0.20 C2(mm) 16.50±0.30 D(mm) 5.45(TYP) D1 2.0 ±0.20 D2 3.0±0.20 D3 1.00±0.20 E(mm) 4.80±0.20 E1(mm) 1.50± +0.15 -0.05 E2(mm) 1.40±0.20 F(mm) 18.70±0.20 G(mm) φ(mm) 4/4 measurement 0.60 +0.15 -0.05 3.20±0.10