MMBD217SEW SILICON EPITAXIAL PLANAR SWITCHING DIODE 3 Applications • Ultra high speed switching 1 2 Marking Code: A7 Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Repetitive Peak Reverse Voltage VRM 80 V Reverse Voltage VR 80 V Average Rectified Forward Current (Single) IO 100 mA Maximum (Peak) Forward Current (Single) IFM 300 mA Peak Forward Surge Current (tp = 1 µs) IFSM 4 A Power Dissipation Pd 200 mW Junction Temperature TJ 150 O Storage Temperature Range Ts - 55 to + 150 O Symbol Max. Unit Forward Voltage at IF = 100 mA VF 1.2 V Reverse Current at VR = 70 V IR 0.1 µA Capacitance between Terminals at VR = 6, f = 1 MHz CT 3.5 pF Reverse Recovery Time at IF = 5 mA, VR = 6 V, RL = 50 Ω trr 4 ns C C Characteristics at Ta = 25 OC Parameter SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 10/10/2008 MMBD217SEW SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 10/10/2008