SHARP GP1S36

GP1S36
GP1S36
Photointerrupter for Detecting
Tilt Direction
■ Features
■ Outline Dimensions
1. Subminiature (4.0×4.2×3.8mm)
(with built-in super compact ball for detecting tilt direction)
2. 2-phase output type
3. Able to detect the tilt direction of both side (±90˚) by the
position of rolling ball.
4. High reliability due to non-contact structure
(Unit : mm)
Internal connection diagram
3
2
PT2
4
PT1
5
1
2
3
■ Applications
Anode
Cathode
Emitter
4.2
Collector-emitter
voltage
Output
Emitter-collector
voltage
Collector current
Collector Power dissipation
Total power dissipation
Operating temperature
Storage temperature
*1 Soldering temperature 1
*2 Soldering temperature 2
3.8
Symbol
Rating
IF
50
VR
6
P
75
VCE1O
35
VCE2O
VE1CO
6
VE2CO
IC
20
PC
75
Ptot
100
−25 to +85
Topr
−40 to +100
Tstg
260
Tsol
Tsol
320
(Ta=25˚C)
3.0MIN.
■ Absolute Maximum Ratings
Input
5
Emitter
Collector
4.0
1. Digital cameras
2. Camcoders
Parameter
Forward current
Reverse voltage
Power dissipation
1
4
Unit
mA
V
mW
V
+0.2
0.15−0.1
*3.05
5
1
4
V
mA
mW
mW
˚C
˚C
˚C
˚C
3
0.4
*1.27
2
*1.27
❈ Unspecified tolerance : ±0.2mm
❈ The dimensions indicated by * refer to
those measured from the lead base.
❈ Burr is not included in the dimensions.
Burr's dimensions : 0.15MAX.
1mmMIN.
Soldering area
*1 For MAX. 5s
*2 For MAX. 2s at the position of 0.8mm from the bottomface of resin package by
hand soldering.
Notice
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
Internet Internet address for Electronic Components Group http://www.sharp.co.jp/ecg/
GP1S36
■ Electro-optical Characteristics
Conditions
IF=20mA
VR=3V
VCE=20V
VCE=5V, IF=5mA
VCE=5V, IF=5mA
VCE=5V, IC=100µA
RL=1 000Ω
IF=10mA, IC=60µA
Parameter
Forward voltage
Symbol
VF
Input
IR
Reverse current
*3 Output
ICEO
Collector dark current
Collector current
IC
*4 Leak current
ILEAK
*3 Coupling
Rise time
tr
Characteristics
Response time
Fall time
tf
Collector-emitter saturation voltage VCE(sat)
MIN.
−
−
−
60
TYP.
1.2
−
−
−
−
−
−
50
50
−
MAX.
1.4
10
100
360
15
150
150
0.4
*3 Output and coupling characteristics are common to the both phototransistors.
*4 Characteristics except leak current is measured at θ=0˚, φ=0˚.
Leak current is the output current of transistor when θ=±90˚, φ=0˚ and IC=OFF.
■ Detecting Angle Characteristics
−75˚
−15˚
θ −90˚
ON
IC1
OFF
*5
IC2
+15˚
+75˚
*5
ON
+90˚
OFF
Device state diagram
−
+
−
φ
❈ Conditions : IF=5mA, VCC=5V, φ<=±5˚
*5 Indefinite
IC1 : Output current of phototransistors PT1
IC2 : Output current of phototransistors PT2
θ : Device condition : Refer to the figure
φ : Device condition : Refer to the figure
ON :Output current of phototransistors : 60µA or more
OFF : Output current of phototransistors : 15µA or less
❈ Output current of ON/OFF is output when device is at a
standstill
+
θ
PT
GL
Gravity direction
Gravity direction
■ Supplement
Resin cover case
Detecting slit
(Opaque/putting a ball)
Space
Detecting slit
<90°rotation>
Resin mold package
Ball(φ=1.2mm, material : steel)
<Viewing from detecting side>
PT1
PT2
PT2
PT1
Gravity direction
PT1 output
Indefinite
(ON)
(ON)
(OFF)
Indefinite
PT2 output
Indefinite
(OFF)
(ON)
(ON)
Indefinite
PT : Detecting
PT : Opaque
PT : Indefinite
(Ta=25˚C)
Unit
V
µA
nA
µA
µA
µs
µs
V
GP1S36
Fig.2 Power Dissipation vs. Ambient
Temperature
60
120
50
100
Power dissipation P (mW)
Forward current IF (mA)
Fig.1 Forward Current vs. Ambient
Temperature
40
30
20
Ptot
P, PC
80
60
40
20
10
0
−25
0
25
50
75 85
0
−25
100
0
Fig.3 Forward Current vs. Forward Voltage
2.2
Forward current IF (mA)
50˚C
100
75 85
100
Ta=25°C
VCE=5V
2.0
25˚C
0˚C
−25˚C
1.8
Collector current IC (mA)
200
50
Fig.4 Collector Current vs. Forward Current
500
Ta=75˚C
25
Ambient temperature Ta (˚C)
Ambient temperature Ta (˚C)
50
20
10
5
1.6
1.4
1.2
1.0
0.8
0.6
0.4
2
0.2
0
1
0
0.5
1
1.5
2
2.5
3.5
3
0
5
10
Fig.5 Collector Current vs. Collector-emitter
Voltage
2.2
Ta=25°C
IF=50mA
120
IF=40mA
100
Relative collector current (%)
Collector current IC (mA)
IF=30mA
1.2
IF=20mA
1.0
0.8
0.6
IF=10mA
0.4
0
1
2
3
4
5
6
30
35
40
45
90
80
70
60
50
40
30
IF=5mA
VCE=5V
IC=100%
at Ta=25˚C
20
IF=5mA
0.2
0
25
110
1.6
1.4
20
7
50
Fig.6 Relative Collector Current vs. Ambient
Temperature
2.0
1.8
15
Forward current IF (mA)
Forward voltage VF (V)
8
Collector-emitter Voltage VCE (V)
9
10
10
0
−25
0
25
50
Ambient temperature Ta (°C)
75
GP1S36
0.20
Fig.8 Response Time vs. Load Resistance
IF=10mA
IC=60µA
0.18
1000
Response time tr, tf, td, ts (µs)
Collector-emitter saturation voltage VCE(sat) (V)
Fig.7 Collector-emitter Saturation Voltage
vs. Ambient Temperature
0.16
0.14
0.12
0.10
0.08
VCE=5V
IC=100µA
Ta=25°C
td
tf
10
ts
1
0.06
0.04
−25
0
25
50
0.1
0.1
75 85
1
Ambient temperature Ta (°C)
10
100
Load resistance RL (kΩ)
Fig.9 Collector Dark Current vs. Ambient
Temperature
Fig.10 Test Circuit for Response Time
10-6
VCC
VCE=20V
Input
Collector dark current ICEO (A)
tr
100
RD
Input
RL
Output
10-7
Output
10%
90%
td
10-8
ts
tr
10-9
10-10
0
25
50
75
Ambient temperature Ta (°C)
100
tf
Application Circuits
NOTICE
●The circuit application examples in this publication are provided to explain representative applications of
SHARP devices and are not intended to guarantee any circuit design or license any intellectual property
rights. SHARP takes no responsibility for any problems related to any intellectual property right of a
third party resulting from the use of SHARP's devices.
●Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
SHARP reserves the right to make changes in the specifications, characteristics, data, materials,
structure, and other contents described herein at any time without notice in order to improve design or
reliability. Manufacturing locations are also subject to change without notice.
●Observe the following points when using any devices in this publication. SHARP takes no responsibility
for damage caused by improper use of the devices which does not meet the conditions and absolute
maximum ratings to be used specified in the relevant specification sheet nor meet the following
conditions:
(i) The devices in this publication are designed for use in general electronic equipment designs such as:
--- Personal computers
--- Office automation equipment
--- Telecommunication equipment [terminal]
--- Test and measurement equipment
--- Industrial control
--- Audio visual equipment
--- Consumer electronics
(ii)Measures such as fail-safe function and redundant design should be taken to ensure reliability and
safety when SHARP devices are used for or in connection with equipment that requires higher
reliability such as:
--- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.)
--- Traffic signals
--- Gas leakage sensor breakers
--- Alarm equipment
--- Various safety devices, etc.
(iii)SHARP devices shall not be used for or in connection with equipment that requires an extremely
high level of reliability and safety such as:
--- Space applications
--- Telecommunication equipment [trunk lines]
--- Nuclear power control equipment
--- Medical and other life support equipment (e.g., scuba).
●Contact a SHARP representative in advance when intending to use SHARP devices for any "specific"
applications other than those recommended by SHARP or when it is unclear which category mentioned
above controls the intended use.
●If the SHARP devices listed in this publication fall within the scope of strategic products described in the
Foreign Exchange and Foreign Trade Control Law of Japan, it is necessary to obtain approval to export
such SHARP devices.
●This publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under
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publication.
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