PT100Mx0MP Series PT100Mx0MP Series Compact, Surface Mount Type Phototransistor ■ Features ■ Outline Dimensions 1. Compact and thin package 2. Surface mount type 3. 2-way mounting : top view/side view 4. Reflow soldering 5. Transparent resin : PT100MC0MP 6. Visible light cut-off resin : PT100MF0MP Pair use with GL100MN0MP/GL100MN1MP is recommended 3 0.65 0.95 1.5 0.4 1 2.2 (Ta=25˚C) (0.57) (0.57) 1 2 1 (1) 1 2 2 (1) Pattern example seeing from PCB (Side view) 3 Pattern example seeing from PCB (Top view) 3 1.5 1.4 *1 Max. 10s 1.1 1.1 Emitter Collector 1.5 1.1 1.7 Unit V V mA mW ˚C ˚C ˚C 0.85 Rating 35 6 20 75 −30 to +85 −40 to +95 240 (0.65) Parameter Symbol Collector-emitter voltage VCEO Emitter-collector voltage VECO Collector current IC Collector power dissipation PC Operating temperature Topr Storage temperature Tstg *1 Soldering temperature Tsol R0.8 (0.4) 1.5 1. Touch panels for ATM 2. Touch panels for Car navigation system 3. Touch panels for FA equipment 2.2 (0.2) (0.35) 0.75 2.8 ■ Applications ■ Absolute Maximum Ratings (Unit : mm) 1.1 (Lens center) Please pay attention not to make circuit pattern in area. ❈ Unspecified tolerance:±0.2mm ❈ ( ):Reference dimensions Au-plated area Notice In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. Internet Internet address for Electronic Components Group http://sharp-world.com/ecg/ PT100Mx0MP Series ■ Electro-optical Characteristics Parameter Symbol IC PT100MC0MP Collector current IC PT100MF0MP ICEO Collector dark current VCE (sat) Collector-emitter saturation voltage BVCEO Collector-emitter breakdown voltage Emitter-collector breakdown voltage BVECO Peak sensitivity wavelength Response time PT100MC0MP PT100MF0MP Rise time Fall time Half intensity angle λp λp tr tf ∆θ Conditions * Ee=1mW/cm2, VCE=5V * Ee=1mW/cm2, VCE=5V Ee=0, VCE=20V * Ee=10mW/cm2, IC=0.5mA Ee=0, IC=0.1mA Ee=0, IE=0.01mA − − VCE=2V, IC=2mA, RL=100Ω VCE=2V, IC=2mA, RL=100Ω − TYP. 2.9 2 1.0 0.1 − − 900 910 5.0 6.0 ±15 MIN. 1.7 1.15 − − 35 6 − − − − − MAX. 5.1 3.45 100 0.4 − − − − − − − (Ta=25˚C) Unit mA mA nA V V V nm nm µs µs ˚ * Ee:Irradiance by CIE standard light source A (tungsten lamp) Fig.2 Collector Dark Current vs. Ambient Temperature 10−6 80 75 70 Collector dark current ICEO (A) Collector power dissipation PC (mW) Fig.1 Collector Power Dissipation vs. Ambient Temperature 60 50 40 30 20 10−7 10−8 10−9 10 0 −30 10−10 0 25 50 75 85 0 100 Fig.3 Relative Collector Current vs. Ambient Temperature PT100MC0MP 140 50 75 85 100 Fig.4 Relative Collector Current vs. Ambient Temperature PT100MF0MP 160 VCE=5V Ee=1mW/cm2 140 Relative collector current (%) 160 25 Ambient temperature Ta (°C) Ambient temperature Ta (°C) Relative collector current (%) VCE=20V 120 100 80 60 40 VCE=5V Ee=1mW/cm2 120 100 80 60 40 20 20 0 −50 −30 −25 0 25 50 Ambient temperature Ta (°C) 75 85 100 0 −50 −30 −25 0 25 50 Ambient temperature Ta (°C) 75 85 100 PT100Mx0MP Series Fig.5 Collector Current vs. Irradiance PT100MC0MP 100 10 1 0.1 0.01 0.1 1 PT100MF0MP 100 VCE=5V Ta=25°C Collector current IC (mA) Collector current IC (mA) Fig.6 Collector Current vs. Irradiance VCE=5V Ta=25°C 10 1 0.1 0.1 10 1 Irradiance Ee (mW/cm2) Fig.7 Collector Current vs. Collector-emitter Voltage PT100MC0MP 5.0 Fig.8 Collector Current vs. Collector-emitter Voltage 4.5 PC (max) 8 Ee=1mW/cm2 0.75mW/cm2 Collector current IC (mA) 4.0 Collector current IC (mA) PT100MF0MP 9 Ta=25°C PC (max) 3.5 3.0 2.5 0.5mW/cm2 2.0 1.5 0.25mW/cm2 0.1mW/cm2 7 6 2mW/cm2 5 1.5mW/cm2 1mW/cm2 4 0.75mW/cm2 3 0.5mW/cm2 2 0.1mW/cm2 0.25mW/cm 1 0.5 0 0.0 0 5 10 15 20 25 30 35 0 40 3 Fig.9 Relative Sensitivity vs. Wavelength (Typical Value) 6 9 PT100MF0MP PT100MC0MP 80 80 Relative sensitivity (%) 100 40 60 40 20 20 0 400 15 Fig.10 Relative Sensitivity vs. Wavelength 100 60 12 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) Relative sensitivity (%) Ta=25°C Ee=3mW/cm2 2.5mW/cm2 2 1.0 10 Irradiance Ee (mW/cm2) 500 600 700 800 900 1 000 1 100 1 200 Wavelength λ (nm) 0 400 500 600 700 800 900 1000 1 100 1 200 Wavelength λ (nm) PT100Mx0MP Series Fig.11 Radiation Diagram −20° −10° +10° 0° +20° 100 −30° Ta=25°C +30° Relative sensitivity (%) 80 −40° −50° −60° 60 +40° 40 +50° +60° 20 −70° +70° +80° −80° −90° +90° 0 Angular displacement θ PT100MC0MP 1.4 Ta=25°C 1.2 1.0 2mA 0.8 0.6 1mA 0.4 0.5mA 0.2 0 0.01 IC=0.1mA 0.1 1 Fig.13 Collector-emitter Saturation Voltage vs. Irradiance Collector-emitter saturation voltage VCE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) Fig.12 Collector-emitter Saturation Voltage vs. Irradiance 10 Ta=25°C 1.2 1.0 2mA 0.8 0.5mA 0.4 0.1mA 0.2 IC=0.05mA 0 0.01 0.1 1 10 Irradiance Ee (mW/cm2) Fig.14 Relative Output vs. Distance To Detector IF=const. Ta=25°C Fig.15 Reflow Soldering Only one time soldering is recommended within the temperature profile shown below. 240°CMAX. 200°C 10 Relative output (%) 1mA 0.6 Irradiance Ee (mW/cm2) 100 PT100MF0MP 1.4 1 to 4°C/s 165°CMAX. 1 to 4°C/s 1 1 to 4°C/s 0.1 25°C 10sMAX. Distance combine GL100MN0 (1) MP 0.01 and PT100MC (F) 0MP 0.1 1 10 60sMAX. 100 Distance to detector d (mm) 1 000 120sMAX. 90sMAX. NOTICE ● The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of SHARP's devices. ● Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. SHARP reserves the right to make changes in the specifications, characteristics, data, materials, structure, and other contents described herein at any time without notice in order to improve design or reliability. Manufacturing locations are also subject to change without notice. ● Observe the following points when using any devices in this publication. SHARP takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used specified in the relevant specification sheet nor meet the following conditions: (i) The devices in this publication are designed for use in general electronic equipment designs such as: - - - Personal computers - -- Office automation equipment - -- Telecommunication equipment [terminal] - - - Test and measurement equipment - - - Industrial control - -- Audio visual equipment - -- Consumer electronics (ii) Measures such as fail-safe function and redundant design should be taken to ensure reliability and safety when SHARP devices are used for or in connection with equipment that requires higher reliability such as: - -- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.) - - - Traffic signals - - - Gas leakage sensor breakers - - - Alarm equipment - -- Various safety devices, etc. (iii)SHARP devices shall not be used for or in connection with equipment that requires an extremely high level of reliability and safety such as: - - - Space applications - -- Telecommunication equipment [trunk lines] - -- Nuclear power control equipment - -- Medical and other life support equipment (e.g., scuba). ● If the SHARP devices listed in this publication fall within the scope of strategic products described in the Foreign Exchange and Foreign Trade Law of Japan, it is necessary to obtain approval to export such SHARP devices. ● This publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. 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