AON7702B 30V N-Channel MOSFET General Description SRFETTMAON7702B uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON) ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Features VDS 30V ID (at VGS=10V) 20A RDS(ON) (at VGS=10V) < 9.5mΩ RDS(ON) (at VGS=4.5V) < 14.5mΩ D Top View 1 8 2 7 3 6 4 5 SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current C A 80 A 11 Avalanche Current C IAS 19 A Avalanche energy L=0.1mH C TC=25°C EAS 18 mJ Power Dissipation B Junction and Storage Temperature Range 3.1 Steady-State Steady-State RθJA RθJC W 2 TJ, TSTG Symbol t ≤ 10s W 9 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 23 PD TC=100°C TA=25°C Power Dissipation A 1/7 V 13.5 IDSM TA=70°C ±20 15.5 IDM TA=25°C Units V 20 ID TC=100°C Maximum 30 -55 to 150 Typ 30 60 4.5 °C Max 40 75 5.4 Units °C/W °C/W °C/W www.freescale.net.cn AON7702B 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=10mA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 80 TJ=125°C 100 ±100 nA 2.5 V 7.6 9.5 12.6 15.5 VGS=4.5V, ID=11A 11.6 14.5 mΩ 0.7 V 20 A Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=13.5A 25 VSD Diode Forward Voltage IS=1A,VGS=0V 0.4 IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance mA 2 VGS=10V, ID=13.5A Output Capacitance Units V 0.5 Zero Gate Voltage Drain Current Coss Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=15V, f=1MHz S 810 pF 135 pF 100 VGS=0V, VDS=0V, f=1MHz 1.3 mΩ 2.5 pF 3.7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 17 24 nC Qg(4.5V) Total Gate Charge 8.5 12 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=15V, ID=13.5A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=13.5A, dI/dt=500A/µs VGS=10V, VDS=15V, RL=1.2Ω, RGEN=3Ω IF=13.5A, dI/dt=500A/µs 2.3 nC 4.5 nC 4 ns 3 ns 23 ns 5 ns 5 ns nC 4.3 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/7 www.freescale.net.cn AON7702B 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 50 10V VDS=5V 4.5V 4V 30 30 ID(A) 40 ID (A) 40 3.5V 20 20 10 125°C 10 VGS=3.0V 25°C 0 0 0 1 2 3 4 1 5 16 3 4 5 Normalized On-Resistance 2 14 VGS=4.5V RDS(ON) (mΩ Ω) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 12 10 8 6 VGS=10V 1.8 VGS=10V ID=13.5A 1.6 17 5 2 VGS=4.5V 10 1.4 1.2 ID=11A 1 0.8 4 0 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 30 1.0E+02 ID=13.5A 1.0E+01 25 125°C 40 1.0E+00 125°C 15 1.0E-01 1.0E-02 10 5 25°C 25°C 1.0E-03 1.0E-04 0 2 3/7 IS (A) RDS(ON) (mΩ Ω) 20 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON7702B 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1000 VDS=15V ID=13.5A Ciss 800 Capacitance (pF) VGS (Volts) 8 6 4 600 400 Coss 2 200 0 0 Crss 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 20 0 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 200 1000.0 TJ(Max)=150°C TC=25°C 10µs 100.0 10.0 160 10µs RDS(ON) limited Power (W) ID (Amps) 5 100µs 1ms 10ms 1.0 DC TJ(Max)=150°C TC=25°C 0.1 17 5 2 10 120 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=5.4°C/W 1 PD 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/7 www.freescale.net.cn AON7702B 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 TA=25°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100°C 100 TA=150°C 10 TA=125°C 25 20 15 10 5 1 0 1 10 100 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 1000 0 25 50 75 100 125 TCASE (°C) Figure 13: Power De-rating (Note F) 150 10000 25 TA=25°C 1000 Power (W) Current rating ID(A) 20 15 10 17 5 2 10 100 10 5 1 0 0 25 75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F) Zθ JA Normalized Transient Thermal Resistance 10 1 50 0 0.001 0.1 10 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 1E-05 150 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/7 www.freescale.net.cn AON7702B 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 1 0.9 1.0E-02 20A 10A 0.8 0.7 1.0E-03 0.6 IR (A) VSD (V) VDS=30V 1.0E-04 0.5 5A 0.4 VDS=15V 0.3 IS=1A 0.2 1.0E-05 0.1 0 1.0E-06 50 100 150 0 200 Temperature (°C) Figure 17: Diode Reverse Leakage Current vs. Junction Temperature 20 12 5 di/dt=800A/µs 12 10 4 6 25ºC 4 125ºC Irm 0 10 15 20 25 6 0 0 5 20 25 30 IS (A) Figure 19: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 5 8 6 6 25ºC Qrr 4 trr (ns) 6 8 4 125ºC trr 2 Irm 2 2 0 0 400 600 800 1000 di/dt (A/µ µs) Figure 20: Diode Reverse Recovery Charge and Peak Current vs. di/dt 2 125ºC S 1 25ºC 0 3 25ºC 4 125ºC 6/7 15 10 Irm (A) 125ºC 200 10 Is=13.5A 8 Qrr (nC) 1 0 30 10 0 2 25ºC Is=13.5A 4 25ºC S IS (A) Figure 18: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 10 3 125ºC 2 0 5 125ºC trr 4 2 25ºC 8 S 10 trr (ns) 125ºC Qrr 10 8 Irm (A) Qrr (nC) 15 0 100 150 200 Temperature (°C) Figure 18: Diode Forward voltage vs. Junction Temperature 14 di/dt=800A/µs 5 50 S 0 25ºC 0 0 200 400 600 800 1000 di/dt (A/µ µs) Figure 21: Diode Reverse Recovery Time and Softness Factor vs. di/dt www.freescale.net.cn AON7702B 30V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 7/7 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn