AON6210 30V N-Channel MOSFET General Description The AON6210 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Conduction and switching losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode. Features VDS 30V ID (at VGS=10V) 85A RDS(ON) (at VGS=10V) < 1.8mΩ RDS(ON) (at VGS = 4.5V) < 2.5mΩ D Top View 1 8 2 7 3 6 4 5 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G TC=25°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case 1/6 IAS, IAR 85 A EAS, EAR 361 mJ 83 Steady-State Steady-State W 33 2.3 RθJA RθJC W 1.5 TJ, TSTG Symbol t ≤ 10s A 22 PDSM TA=70°C A 28 PD TC=100°C V 350 IDSM TA=70°C ±20 67 IDM TA=25°C Continuous Drain Current Units V 85 ID TC=100°C Maximum 30 -55 to 150 Typ 14 40 1 °C Max 17 55 1.5 Units °C/W °C/W °C/W www.freescale.net.cn Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55°C 5 Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.1 ID(ON) On state drain current VGS=10V, VDS=5V 350 VGS=10V, ID=20A TJ=125°C Static Drain-Source On-Resistance VGS=4.5V, ID=20A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous CurrentG VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A Units V 1 IGSS IS Max 30 VGS(th) RDS(ON) Typ µA 100 nA 1.6 2.1 V 1.5 1.8 2.1 2.5 2 2.5 A 110 mΩ mΩ S 0.7 1 V 85 A 4200 5250 6300 pF 1500 2240 3000 pF 95 160 270 pF 0.5 1 1.5 Ω 60 80 100 nC 30 38 45 nC 8 10 12 nC 7 13 18 nC VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 12 ns 7 ns 53 ns 14 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 20 25 30 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 70 88 105 ns nC A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/6 www.freescale.net.cn TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 140 140 10V 120 100 3V 80 ID(A) ID (A) 100 VDS=5V 120 6V 4V 60 80 60 125°C 40 40 20 25°C 20 VGS=2.5V 0 0 0 1 2 3 4 1 5 4 Normalized On-Resistance RDS(ON) (mΩ) 2 2.5 3 3.5 4 2 3 VGS=4.5V 2 1 VGS=10V 1.8 VGS=10V ID=20A 1.6 17 5 2 VGS=4.5V10 1.4 1.2 ID=20A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 5 ID=30A 1.0E+01 4 40 1.0E+00 IS (A) RDS(ON) (mΩ) 1.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 3 125°C 2 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 1 1.0E-04 25°C 1.0E-05 0.0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 7000 Capacitance (pF) VGS (Volts) 6 4 2 4000 Coss 3000 2000 Crss 0 0 20 40 60 Qg (nC) Figure 7: Gate-Charge Characteristics 80 0 10µs RDS(ON) limited 100µs 1ms 10ms 10.0 DC 1.0 10µs 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 TJ(Max)=150°C TC=25°C 0.1 0.0 0.01 0.1 1 17 5 2 10 120 80 1 VDS (Volts) 10 100 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 40 0.0001 0.001 0.01 1 0 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.5°C/W PD 0.1 Ton 0.01 0.00001 0.1 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 TJ(Max)=150°C TC=25°C 160 Power (W) 100.0 5 200 1000.0 ID (Amps) 5000 1000 0 ZθJC Normalized Transient Thermal Resistance Ciss 6000 VDS=15V ID=20A 8 Single Pulse 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 TA=25°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100°C 100 TA=150°C TA=125°C 10 80 60 40 20 0 1 10 100 1000 Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C) 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) TA=25°C 80 Power (W) 1000 60 40 17 5 2 10 100 10 20 1 0.00001 0 0 25 50 75 100 125 150 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.001 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note F) ZθJA Normalized Transient Thermal Resistance 25 10000 100 Current rating ID(A) 0 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=55°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & W aveforms RL Vds Vds Vgs 90% + Vdd DUT VDC Rg - 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & W aveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig 6/6 Vgs Isd L + Vdd VDC - IF t rr dI/dt I RM Vdd Vds www.freescale.net.cn