AON7246 60V N-Channel MOSFET General Description The AON7246 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) .This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backligh ting. Product Summary VDS 60V 34.5A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 15mΩ RDS(ON) (at VGS =4.5V) < 19mΩ 100% UIS Tested 100% Rg Tested D Top View 1 8 2 7 3 6 4 5 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 1/6 IAS, IAR 20 A EAS, EAR 20 mJ 34.7 Steady-State Steady-State W 13.9 3.1 RθJA RθJC W 2 TJ, TSTG Symbol t ≤ 10s A 8 PDSM TA=70°C A 10 PD TC=100°C V 22 IDSM TA=70°C ±20 95 IDM TA=25°C Continuous Drain Current Units V 34.5 ID TC=100°C Maximum 60 -55 to 150 Typ 30 60 3 °C Max 40 75 3.6 Units °C/W °C/W °C/W www.freescale.net.cn AON7246 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V V IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage On state drain current VDS=VGS, ID=250µA 1.5 VGS=10V, VDS=5V 95 TJ=55°C TJ=125°C VGS=4.5V, ID=9A gFS Forward Transconductance VDS=5V, ID=10A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance µA 5 VGS=10V, ID=10A Static Drain-Source On-Resistance Units 1 Zero Gate Voltage Drain Current RDS(ON) Max 60 VDS=60V, VGS=0V IDSS ID(ON) Typ 100 nA 2 2.5 V 12 15 20.5 26 15 19 mΩ 1 V 35 A A mΩ 75 0.72 S 1070 1340 1610 pF VGS=0V, VDS=30V, f=1MHz 85 123 160 pF 6 10 14 pF VGS=0V, VDS=0V, f=1MHz 0.7 1.5 2.3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 16 21 25 nC Qg(4.5V) Total Gate Charge 7 9 11 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=10V, VDS=30V, ID=10A Qgs Gate Source Charge 4.7 nC Qgd Gate Drain Charge 2.6 nC tD(on) Turn-On DelayTime 6 ns tr Turn-On Rise Time 2.5 ns VGS=10V, VDS=30V, RL=3.0Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=10A, dI/dt=500A/µs 10.5 15.5 20.5 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs 38.5 55.5 72.5 Body Diode Reverse Recovery Time 22 ns 2.5 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/6 www.freescale.net.cn AON7246 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 10V VDS=5V 4.5V 6V 60 4V ID(A) ID (A) 60 40 40 125°C 3.5V 20 20 VGS=3V 0 0 1 2 3 4 25°C 0 1 5 20 3 4 5 6 Normalized On-Resistance 2 18 VGS=4.5V RDS(ON) (mΩ Ω) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 16 14 12 10 VGS=10V 1.8 VGS=10V ID=10A 1.6 17 5 2 10 =4.5V 1.4 1.2 VGS ID=9A 1 0.8 8 0 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction18 Temperature (Note E) 35 1.0E+02 ID=10A 1.0E+01 20 15 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 10 25°C 1.0E-04 1.0E-05 5 2 3/6 40 1.0E+00 125°C 25 IS (A) RDS(ON) (mΩ Ω) 30 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON7246 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1800 10 VDS=30V ID=10A 1600 Ciss 1400 Capacitance (pF) VGS (Volts) 8 6 4 1200 1000 800 600 Coss 400 2 200 0 0 5 10 15 20 Qg (nC) Figure 7: Gate-Charge Characteristics 0 25 10 20 30 40 50 VDS (Volts) Figure 8: Capacitance Characteristics 60 200 1000.0 RDS(ON) limited 10.0 100µs 1ms 1.0 10ms 17 5 2 10 120 80 DC TJ(Max)=150°C TC=25°C 0.1 TJ(Max)=150°C TC=25°C 160 10µs Power (W) 10µs 100.0 ID (Amps) Crss 0 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=3.6°C/W 1 PD 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AON7246 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 35 TA=25°C 100 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100°C TA=150°C 10 TA=125°C 30 25 20 15 10 5 1 0 1 10 100 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 1000 0 25 50 75 100 125 TCASE (°C) Figure 13: Power De-rating (Note F) 10000 40 35 TA=25°C 1000 30 25 Power (W) Current rating ID(A) 150 20 15 17 5 2 10 100 10 10 5 1 0 0 25 50 75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F) 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 1E-05 150 0.001 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn AON7246 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 6/6 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn