IRFR/U24N15D SMPS MOSFET HEXFET® Power MOSFET Applications High frequency DC-DC converters l VDSS 150V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current RDS(on) max ID 95mΩ 24A D-Pak IRFR24N15D I-Pak IRFU24N15D Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. Units 24 17 96 140 0.92 ± 30 4.9 -55 to + 175 A W W/°C V V/ns °C 300 (1.6mm from case ) Thermal Resistance Parameter RθJC RθJA RθJA 1 / 10 Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient Typ. Max. Units ––– ––– ––– 1.1 50 110 °C/W www.freescale.net.cn IRFR/U24N15D Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 150 ––– ––– 3.0 ––– ––– ––– ––– Typ. ––– 0.18 82 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 95 mΩ VGS = 10V, ID = 14A 5.0 V VDS = VGS, ID = 250µA 25 VDS = 150V, VGS = 0V µA 250 VDS = 120V, VGS = 0V, TJ = 150°C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 8.2 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 30 7.4 17 11 53 19 15 890 220 46 1460 95 200 Max. Units Conditions ––– S VDS = 25V, ID = 14A 45 ID = 14A 11 nC VDS = 120V 26 VGS = 10V, ––– VDD = 75V ––– ID = 14A ns ––– RG = 6.8Ω ––– VGS = 10V ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 120V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 120V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. Max. Units ––– ––– ––– 170 14 14 mJ A mJ Diode Characteristics IS ISM VSD trr Qrr ton 2 / 10 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 24 ––– ––– showing the A G integral reverse 96 ––– ––– S p-n junction diode. ––– ––– 1.5 V TJ = 25°C, IS = 14A, VGS = 0V ––– 110 ––– ns TJ = 25°C, IF = 14A ––– 450 ––– nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.freescale.net.cn IRFR/U24N15D 1000 100 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V 100 10 TOP ID , Drain-to-Source Current (A) ID , Drain-to-Source Current (A) TOP 1 5.0V 0.1 0.01 10 5.0V 1 20µs PULSE WIDTH Tj = 25°C 20µs PULSE WIDTH Tj = 175°C 0.1 0.001 0.1 1 10 100 0.1 1 VDS, Drain-to-Source Voltage (V) 10 100 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 3.0 100 TJ = 175 ° C I D = 24A 1 TJ = 25 ° C V DS= 50V 20µs PULSE WIDTH 0.1 4 6 8 10 12 14 V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 3 / 10 16 2.0 (Normalized) 10 RDS(on) , Drain-to-Source On Resistance I D, Drain-to-Source Current (A) 2.5 1.5 1.0 0.5 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 80 TJ , Junction Temperature 100 120 140 160 180 ( ° C) Fig 4. Normalized On-Resistance Vs. Temperature www.freescale.net.cn IRFR/U24N15D 10000 12 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd I D = 14A V DS = 120V V DS = 75V V DS = 30V 10 1000 Ciss 8 VGS, Gate-to-Source Voltage (V) C, Capacitance(pF) Coss = Cds + Cgd Coss 100 Crss 6 4 2 10 1 10 100 0 1000 0 5 VDS , Drain-to-Source Voltage (V) 20 25 30 35 1000 ID, Drain-to-Source Current (A) 100 TJ = 175 ° C I SD, Reverse Drain Current (A) 15 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage T J = 25 ° C 1 V GS = 0 V 0.0 0.5 OPERATION IN THIS AREA LIMITED BY R DS (on) 100 10 0.1 1.0 1.5 2.0 V SD,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 / 10 10 Q G, Total Gate Charge (nC) 2.5 10 100µsec 1msec 1 Tc = 25°C Tj = 175°C Single Pulse 10msec 0.1 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.freescale.net.cn IRFR/U24N15D 25 RD VDS VGS 20 D.U.T. RG + ID , Drain Current (A) -VDD 15 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 10 Fig 10a. Switching Time Test Circuit VDS 5 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms (Z thJC ) 10 1 Thermal Response D = 0.50 0.20 P DM 0.10 0.1 0.05 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = 2. Peak T 0.01 0.00001 0.0001 0.001 0.01 t1 / t 2 J = P DM x Z thJC +T C 0.1 1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 / 10 www.freescale.net.cn IRFR/U24N15D 320 1 5V ID TOP 5.9A 10A BOTTOM D R IV E R L VDS D .U .T RG + V - DD IA S 20V A 0 .0 1 Ω tp Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp E AS , Single Pulse Avalanche Energy (mJ) 240 14A 160 80 0 25 50 75 100 125 150 175 ( ° C) Starting Tj, Junction Temperature Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ 12V .2µF .3µF QGS QGD D.U.T. VG + V - DS VGS 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 / 10 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.freescale.net.cn IRFR/U24N15D Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + • • • • RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. Period D= + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs 7 / 10 www.freescale.net.cn IRFR/U24N15D I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) 6 .7 3 (.26 5 ) 6 .3 5 (.25 0 ) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) -A 1 .2 7 ( .0 5 0 ) 0 .8 8 ( .0 3 5 ) 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - SOURCE 4 - D R A IN 4 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 6 .2 2 ( .2 4 5 ) 5 .9 7 ( .2 3 5 ) 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 1 2 3 -B - N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 1 4 .5M , 19 8 2 . 2.2 8 (.0 9 0) 1.9 1 (.0 7 5) 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R MS TO J E D E C O U T L IN E TO -2 5 2 A A . 9 .6 5 ( .3 8 0 ) 8 .8 9 ( .3 5 0 ) 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X. + 0.1 6 (.0 0 6 ). 3X 1 .1 4 (.0 45 ) 0 .7 6 (.0 30 ) 2 .28 (.0 9 0 ) 3X 1 .1 4 ( .0 4 5 ) 0 .8 9 ( .0 3 5 ) 0 .8 9 (.0 35 ) 0 .6 4 (.0 25 ) 0 .2 5 (.0 1 0 ) M A M B 2X 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) I-Pak (TO-251AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H ASSEMBLY LOT CODE 5678 ASSEMBLED ON WW 19, 1999 IN T HE ASSEMBLY LINE "A" 9 / 10 PART NUMBER IRFU120 919A 56 78 DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A www.freescale.net.cn IRFR/U24N15D D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .47 6 ) 11.9 ( .46 9 ) F E E D D IR E C T IO N TRL 16 .3 ( .641 ) 15 .7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FE E D D IR E C T IO N N O T ES : 1 . C O N T R O LLIN G D IME N S IO N : M ILL IM ET E R . 2 . A LL D IM EN S IO N S A R E SH O W N IN M ILLIM ET E R S ( IN C H E S ). 3 . O U TL IN E C O N FO R MS T O E IA -481 & E IA -54 1. 1 3 IN C H 16 m m N O TE S : 1. O U TL IN E C O N F O R M S T O E IA -481 . Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.7mH RG = 25Ω, IAS = 14A. Pulse width ≤ 300µs; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . ISD ≤ 14A, di/dt ≤ 380A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. * When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. 10 / 10 www.freescale.net.cn