SQ4920EY Automotive Dual N-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () at VGS = 10 V 0.0145 RDS(on) () at VGS = 4.5 V 0.0175 ID (A) per leg 8 Configuration Dual FEATURES • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested D1 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G1 G2 4 5 D2 • Material categorization: For definitions of compliance please see www.freescale.net.cn D2 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET Top View ORDERING INFORMATION Package SO-8 Lead (Pb)-free and Halogen-free SQ4920EY-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Currenta TC = 25 °C TC = 125 °C Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID 8 IS 4 32 IAS 25 PD V 7.2 IDM EAS UNIT 31 4.4 1.4 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT RthJA 110 RthJF 34 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) PCB Mountc °C/W Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. 1 / 10 www.freescale.net.cn SQ4920EY Automotive Dual N-Channel 30 V (D-S) 175 °C MOSFET SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VDS VGS = 0, ID = 250 μA 30 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 VDS = 0 V, VGS = ± 20 V IGSS - - ± 100 VGS = 0 V VDS = 30 V - - 1.0 - - 50 Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 30 V, TJ = 125 °C VGS = 0 V VDS = 30 V, TJ = 175 °C - - 150 On-State Drain Currenta ID(on) VGS = 10 V VDS5 V 30 - - VGS = 4.5 V ID = 5 A - 0.016 0.0175 VGS = 10 V ID = 6 A - 0.013 0.0145 VGS = 10 V ID = 6 A, TJ = 125 °C - - 0.024 VGS = 10 V ID = 6 A, TJ = 175 °C Drain-Source On-State Resistancea Forward Transconductancef RDS(on) gfs VDS = 15 V, ID = 6 A - - 0.028 - 43 - - 1175 1465 - 225 280 V nA μA A S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 85 105 Total Gate Chargec Qg - 19.7 30 Gate-Source Chargec Qgs - 3.8 - - 2.9 - 2.5 - 7.5 10 Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec VGS = 0 V VDS = 15 V, f = 1 MHz VGS = 10 V VDS = 15 V, ID = 6.1 A Qgd Rg f = 1 MHz pF nC td(on) - 7 tr - 10 15 - 25 37 - 8 12 - - 32 A - 0.75 1.1 V td(off) VDD = 15 V, RL = 15 ID 1 A, VGEN = 10 V, Rg = 1 tf ns Source-Drain Diode Ratings and Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 1.8 A, VGS = 0 Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 / 10 www.freescale.net.cn SQ4920EY Automotive Dual N-Channel 30 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 40 40 V GS = 10 V thru 4 V 32 ID - Drain Current (A) ID - Drain Current (A) 32 24 16 V GS = 3 V 24 16 T C = 25 °C 8 8 T C = 125 °C T C = - 55 °C 0 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 10 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.05 80 0.04 RDS(on) - On-Resistance (Ω) 100 g fs - Transconductance (S) 5 T C = - 55 °C 60 T C = 25 °C 40 T C = 125 °C 20 0.03 0.02 V GS = 4.5 V 0.01 0 V GS = 10 V 0 0 3 6 9 ID - Drain Current (A) 12 15 0 8 16 24 32 40 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 1500 10 ID = 6.1 A VGS - Gate-to-Source Voltage (V) Ciss C - Capacitance (pF) 1200 900 600 Coss 300 Crss 0 0 6 V DS = 15 V 4 2 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) Capacitance 3 / 10 8 30 0 5 10 15 Qg - Total Gate Charge (nC) 20 Gate Charge www.freescale.net.cn SQ4920EY Automotive Dual N-Channel 30 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 ID = 6 A V GS = 10 V 1.7 10 IS - Source Current (A) RDS(on) - On-Resistance (Normalized) 2.0 1.4 V GS = 4.5 V 1.1 0.8 T J = 25 °C 0.1 0.01 0.5 - 50 0.001 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 175 0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 Drain Source Breakdown vs. Junction Temperature On-Resistance vs. Junction Temperature 0.15 0.6 ID = 4.2 A 0.3 VGS(th) Variance (V) 0.12 0.09 0.06 0 - 0.3 ID = 5 mA - 0.6 T J = 150 °C ID = 250 μA 0.03 - 0.9 T J = 25 °C 0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) - 1.2 - 50 10 - 25 0 25 50 75 100 125 150 175 TJ - Temperature (°C) Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 40 ID = 1 mA VDS - Drain-to-Source Voltage (V) RDS(on) - On-Resistance (Ω) T J = 150 °C 1 38 36 34 32 30 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Threshold Voltage 4 / 10 www.freescale.net.cn SQ4920EY Automotive Dual N-Channel 30 V (D-S) 175 °C MOSFET THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 100 IDM Limited 100 μs Limited by RDS(on)* ID - Drain Current (A) 10 1 ms ID Limited 1 10 ms 100 ms 1s 10 s, DC 0.1 TC = 25 °C Single Pulse BVDSS Limited 0.01 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 110 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 5 / 10 www.freescale.net.cn SQ4920EY Automotive Dual N-Channel 30 V (D-S) 175 °C MOSFET THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. 6 / 10 www.freescale.net.cn SQ4920EY Automotive Dual N-Channel 30 V (D-S) 175 °C MOSFET SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A B e All Leads q A1 L 0.004" MILLIMETERS DIM Min INCHES Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 7 / 10 www.freescale.net.cn SQ4920EY Automotive Dual N-Channel 30 V (D-S) 175 °C MOSFET Mounting LITTLE FOOT®, SO-8 Power MOSFETs Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same. See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, ( www.freescale.net.cn ), for the basis of the pad design for a LITTLE FOOT SO-8 power MOSFET. In converting this recommended minimum pad to the pad set for a power MOSFET, designers must make two connections: an electrical connection and a thermal connection, to draw heat away from the package. In the case of the SO-8 package, the thermal connections are very simple. Pins 5, 6, 7, and 8 are the drain of the MOSFET for a single MOSFET package and are connected together. In a dual package, pins 5 and 6 are one drain, and pins 7 and 8 are the other drain. For a small-signal device or integrated circuit, typical connections would be made with traces that are 0.020 inches wide. Since the drain pins serve the additional function of providing the thermal connection to the package, this level of connection is inadequate. The total cross section of the copper may be adequate to carry the current required for the application, but it presents a large thermal impedance. Also, heat spreads in a circular fashion from the heat source. In this case the drain pins are the heat sources when looking at heat spread on the PC board. 0.288 7.3 0.050 1.27 0.196 5.0 0.027 0.69 0.078 1.98 0.2 5.07 Figure 1. Single MOSFET SO-8 Pad Pattern With Copper Spreading 8 / 10 0.288 7.3 0.050 1.27 0.088 2.25 0.088 2.25 0.027 0.69 0.078 1.98 0.2 5.07 Figure 2. Dual MOSFET SO-8 Pad Pattern With Copper Spreading The minimum recommended pad patterns for the single-MOSFET SO-8 with copper spreading (Figure 1) and dual-MOSFET SO-8 with copper spreading (Figure 2) show the starting point for utilizing the board area available for the heat-spreading copper. To create this pattern, a plane of copper overlies the drain pins. The copper plane connects the drain pins electrically, but more importantly provides planar copper to draw heat from the drain leads and start the process of spreading the heat so it can be dissipated into the ambient air. These patterns use all the available area underneath the body for this purpose. Since surface-mounted packages are small, and reflow soldering is the most common way in which these are affixed to the PC board, “thermal” connections from the planar copper to the pads have not been used. Even if additional planar copper area is used, there should be no problems in the soldering process. The actual solder connections are defined by the solder mask openings. By combining the basic footprint with the copper plane on the drain pins, the solder mask generation occurs automatically. A final item to keep in mind is the width of the power traces. The absolute minimum power trace width must be determined by the amount of current it has to carry. For thermal reasons, this minimum width should be at least 0.020 inches. The use of wide traces connected to the drain plane provides a low impedance path for heat to move away from the device. www.freescale.net.cn SQ4920EY Automotive Dual N-Channel 30 V (D-S) 175 °C MOSFET RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index 9 / 10 www.freescale.net.cn SQ4920EY Automotive Dual N-Channel 30 V (D-S) 175 °C MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, “freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. 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