SHENZHENFREESCALE SQ4532EY

SQ4532EY
Automotive N-and P-Channel
30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
N-CHANNEL
P-CHANNEL
30
- 30
RDS(on) () at VGS = ± 10 V
0.055
0.070
RDS(on) () at VGS = ± 4.5 V
0.100
0.190
5.6
- 5.3
VDS (V)
ID (A)
Configuration
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedc
N- and P-Pair
• 100 % Rg and UIS Tested
SO-8
D1
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
S2
• Compliant to RoHS Directive 2002/95/EC
G2
G1
Top View
S1
D2
N-Channel MOSFET
P-Channel MOSFET
ORDERING INFORMATION
Package
SO-8
Lead (Pb)-free and Halogen-free
SQ4532EY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
SYMBOL
N-CHANNEL
P-CHANNEL
Drain-Source Voltage
PARAMETER
VDS
30
- 30
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C
TC = 125 °C
Continuous Source Current (Diode Conduction)
Pulsed Drain Currenta
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationa
L = 0.1 mH
TC = 25 °C
TC = 125 °C
ID
± 20
5.6
-3
IS
3
-3
IDM
22
- 21
IAS
10
-9
EAS
5
4
3.3
3.3
1.1
1.1
TJ, Tstg
Operating Junction and Storage Temperature Range
V
- 5.3
3.2
PD
UNIT
- 55 to + 175
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
PCB Mountb
SYMBOL
N-CHANNEL
P-CHANNEL
RthJA
110
105
RthJF
45
45
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. When mounted on 1" square PCB (FR4 material).
c. Parametric verification ongoing.
1 / 15
www.freescale.net.cn
UNIT
°C/W
SQ4532EY
Automotive N-and P-Channel
30 V (D-S) 175 °C MOSFET
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS(th)
IGSS
VGS = 0, ID = 250 μA
N-Ch
30
-
-
VGS = 0, ID = - 250 μA
P-Ch
- 30
-
-
VDS = VGS, ID = 250 μA
N-Ch
1.5
2
2.5
VDS = VGS, ID = - 250 μA
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductanceb
IDSS
ID(on)
RDS(on)
gfs
VDS = 30 V
P-Ch
- 1.5
-2
- 2.5
N-Ch
-
-
± 100
P-Ch
-
-
± 100
N-Ch
-
-
1
-1
VGS = 0 V
VDS = - 30 V
P-Ch
-
-
VGS = 0 V
VDS = 30 V, TJ = 125 °C
N-Ch
-
-
50
VGS = 0 V
VDS = - 30 V, TJ = 125 °C
P-Ch
-
-
- 50
VGS = 0 V
VDS = 30 V, TJ = 175 °C
N-Ch
-
-
150
VGS = 0 V
VDS = - 30 V, TJ = 175 °C
P-Ch
-
-
- 150
VGS = 10 V
VDS=  5 V
N-Ch
15
-
-
VGS = - 10 V
VDS=  5 V
P-Ch
- 15
-
-
VGS = 10 V
ID = 4.9 A
N-Ch
-
0.046
0.055
VGS = - 10 V
ID = - 3.5 A
P-Ch
-
0.056
0.070
VGS = 10 V
ID = 4.9 A, TJ = 125 °C
N-Ch
-
-
0.087
VGS = - 10 V
ID = - 3.5 A, TJ = 125 °C
P-Ch
-
-
0.100
VGS = 10 V
ID = 4.9 A, TJ = 175 °C
N-Ch
-
-
0.105
VGS = - 10 V
ID = - 3.5 A, TJ = 175 °C
P-Ch
-
-
0.117
VGS = 4.5 V
ID = 4.1 A
N-Ch
-
0.083
0.100
VGS = - 4.5 V
ID = - 2.5 A
P-Ch
-
0.157
0.190
VDS = 15 V, ID = 4.9 A
N-Ch
-
9.8
-
VDS = - 15 V, ID = - 3.5 A
P-Ch
-
5.5
-
V
nA
μA
A

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
2 / 15
VGS = 0 V
VDS = 25 V, f = 1 MHz
N-Ch
-
444
555
VGS = 0 V
VDS = - 25 V, f = 1 MHz
P-Ch
-
384
480
VGS = 0 V
VDS = 25 V, f = 1 MHz
N-Ch
-
96
120
VGS = 0 V
VDS = - 25 V, f = 1 MHz
P-Ch
-
100
125
VGS = 0 V
VDS = 25 V, f = 1 MHz
N-Ch
-
36
45
VGS = 0 V
VDS = - 25 V, f = 1 MHz
P-Ch
-
56
70
VGS = 10 V
VDS = 15 V, ID = 3.9 A
N-Ch
-
8.7
13
VGS = - 10 V
VDS = - 15 V, ID = - 2.5 A
P-Ch
-
9.7
15
VGS = 10 V
VDS = 15 V, ID = 3.9 A
N-Ch
-
1.9
-
VGS = - 10 V
VDS = - 15 V, ID = - 2.5 A
P-Ch
-
1.8
-
VGS = 10 V
VDS = 15 V, ID = 3.9 A
N-Ch
-
1.6
-
VGS = - 10 V
VDS = - 15 V, ID = - 2.5 A
P-Ch
-
2.3
-
N-Ch
1.4
-
4.2
P-Ch
3.7
-
11
f = 1 MHz
www.freescale.net.cn
pF
nC

SQ4532EY
Automotive N-and P-Channel
30 V (D-S) 175 °C MOSFET
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
SYMBOL
td(on)
tr
td(off)
tf
TEST CONDITIONS
MIN.
TYP.
MAX.
VDD = 15 V, RL = 15 
ID  1 A, VGEN = 10 V, Rg = 1 
N-Ch
-
7
11
VDD = - 15 V, RL = 15 
ID  - 1 A, VGEN = - 10 V, Rg = 1 
P-Ch
-
7
11
VDD = 15 V, RL = 15 
ID  1 A, VGEN = 10 V, Rg = 1 
N-Ch
-
10
15
VDD = - 15 V, RL = 15 
ID  - 1 A, VGEN = - 10 V, Rg = 1 
P-Ch
-
9
14
VDD = 15 V, RL = 15 
ID  1 A, VGEN = 10 V, Rg = 1 
N-Ch
-
14
21
VDD = - 15 V, RL = 15 
ID  - 1 A, VGEN = - 10 V, Rg = 1 
P-Ch
-
17
26
VDD = 15 V, RL = 15 
ID  1 A, VGEN = 10 V, Rg = 1 
N-Ch
-
7
11
VDD = - 15 V, RL = 15 
ID  - 1 A, VGEN = - 10 V, Rg = 1 
P-Ch
-
8
12
N-Ch
-
-
22
P-Ch
-
-
- 21
IS = 2 A
N-Ch
-
0.8
1.2
IS = - 1.5 A
P-Ch
-
- 0.8
- 1.2
UNIT
ns
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
A
V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
3 / 15
www.freescale.net.cn
SQ4532EY
Automotive N-and P-Channel
30 V (D-S) 175 °C MOSFET
N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
20
18
VGS = 10 V thru 6 V
15
16
ID - Drain Current (A)
ID - Drain Current (A)
VGS = 5 V
12
8
VGS = 4 V
12
9
TC = 25 °C
6
4
3
TC = 125 °C
TC = - 55 °C
VGS = 3 V
0
0
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
10
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
Output Characteristics
10
Transfer Characteristics
2.0
15
1.6
12
gfs - Transconductance (S)
1.2
TC = 25 °C
0.8
D
I - Drain Current (A)
TC = - 55 °C
0.4
TC = 125 °C
TC = - 55 °C
1
2
3
4
VGS - Gate-to-Source Voltage (V)
9
TC = 125 °C
6
3
0
0.0
0
TC = 25 °C
0
5
1
Transfer Characteristics
4
5
Transconductance
0.25
600
500
C - Capacitance (pF)
0.20
RDS(on) - On-Resistance (Ω)
2
3
ID - Drain Current (A)
VGS = 4.5 V
0.15
0.10
Ciss
400
300
200
VGS = 10 V
Coss
0.05
100
0.00
Crss
0
0
4
8
12
ID - Drain Current (A)
16
On-Resistance vs. Drain Current
4 / 15
20
0
5
10
15
20
25
VDS - Drain-to-Source Voltage (V)
30
Capacitance
www.freescale.net.cn
SQ4532EY
Automotive N-and P-Channel
30 V (D-S) 175 °C MOSFET
N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.0
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
10
ID = 3.9 A
8
VDS = 15 V
6
4
2
0
ID = 4.9 A
1.7
VGS = 10 V
1.4
VGS = 4.5 V
1.1
0.8
0.5
0
2
4
6
8
- 50 - 25
10
0
25
50
75 100 125
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
Gate Charge
0.25
0.20
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
10
TJ = 150 °C
1
0.1
TJ = 25 °C
0.01
0.15
0.05
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
1.2
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
42
VDS - Drain-to-Source Voltage (V)
0.2
- 0.1
ID = 5 mA
- 0.4
ID = 250 μA
- 0.7
- 1.0
- 50 - 25
TJ = 25 °C
0.00
0.5
VGS(th) Variance (V)
TJ = 150 °C
0.10
Source Drain Diode Forward Voltage
0
25
50
75
100
TJ - Temperature (°C)
Threshold Voltage
5 / 15
175
On-Resistance vs. Junction Temperature
100
0.001
0.0
150
125
150
175
40
ID = 1 mA
38
36
34
32
- 50 - 25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
175
Drain Source Breakdown vs. Junction Temperature
www.freescale.net.cn
SQ4532EY
Automotive N-and P-Channel
30 V (D-S) 175 °C MOSFET
N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
IDM Limited
ID - Drain Current (A)
10
Limited by R DS(on)*
100 us
1 ms
1
10 ms
100 ms
1s
10 s, DC
TC = 25 °C
Single Pulse
0.1
BVDSS Limited
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 110 °C/W
0.02
3. TJM - T A = PDMZthJA(t)
Single Pulse
0.01
10 -4
10 -3
4. Surface Mounted
10 -2
10 -1
1
Square Wave Pulse Duration (s)
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
6 / 15
www.freescale.net.cn
SQ4532EY
Automotive N-and P-Channel
30 V (D-S) 175 °C MOSFET
N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
7 / 15
www.freescale.net.cn
SQ4532EY
Automotive N-and P-Channel
30 V (D-S) 175 °C MOSFET
P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
18
20
VGS = 10 V thru 7 V
VGS = 6 V
15
ID - Drain Current (A)
ID - Drain Current (A)
16
12
VGS = 5 V
8
4
12
9
TC = 25 °C
6
3
VGS = 4 V
TC = 125 °C
TC = - 55 °C
0
0
0
2
4
6
8
0
10
2
4
6
8
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2.0
10
8
TC = - 55 °C
TC = 25 °C
gfs - Transconductance (S)
ID - Drain Current (A)
1.6
1.2
TC = 25 °C
0.8
0.4
6
TC = 125 °C
4
2
TC = 125 °C
TC = - 55 °C
0
0.0
0
1
2
3
4
0
5
1
2
3
4
5
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Transconductance
700
0.50
600
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.40
VGS = 4.5 V
0.30
0.20
0.10
VGS = 10 V
500
Ciss
400
300
200
Coss
100
Crss
0.00
0
0
4
8
12
16
ID - Drain Current (A)
On-Resistance vs. Drain Current
8 / 15
20
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
Capacitance
www.freescale.net.cn
SQ4532EY
Automotive N-and P-Channel
30 V (D-S) 175 °C MOSFET
P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.0
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
10
ID = 2.5 A
8
VDS = 15 V
6
4
2
0
0
2
4
6
8
VGS = 10 V
1.4
1.1
0.8
0.5
10
Qg - Total Gate Charge (nC)
- 50 - 25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
100
150
175
0.50
10
RDS(on) - On-Resistance (Ω)
0.40
TJ = 150 °C
IS - Source Current (A)
ID = 3.9 A
1.7
1
0.1
TJ = 25 °C
0.01
0.30
0.20
TJ = 150 °C
0.10
TJ = 25 °C
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
1.2
0
Source Drain Diode Forward Voltage
- 29
VDS - Drain-to-Source Voltage (V)
VGS(th) Variance (V)
0.7
ID = 250 μA
0.4
ID = 5 mA
0.1
- 0.2
0
25
50
75 100
TJ - Temperature (°C)
Threshold Voltage
9 / 15
10
On-Resistance vs. Gate-to-Source Voltage
1.0
- 0.5
- 50 - 25
2
4
6
8
VGS - Gate-to-Source Voltage (V)
125
150
175
- 30
ID = 1 mA
- 31
- 32
- 33
- 34
- 35
- 36
- 50
- 25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
175
Drain Source Breakdown vs. Junction Temperature
www.freescale.net.cn
SQ4532EY
Automotive N-and P-Channel
30 V (D-S) 175 °C MOSFET
P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
IDM Limited
ID - Drain Current (A)
10
Limited by RDS(on)*
100 us
1 ms
1
10 ms
0.1
100 ms
1s
10 s, DC
TC = 25 °C
Single Pulse
BVDSS Limited
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 105 °C/W
0.02
3. TJM - T A = PDMZthJA(t)
Single Pulse
0.01
10 -4
10 -3
4. Surface Mounted
10 -2
10 -1
1
Square Wave Pulse Duration (s)
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
10 / 15
www.freescale.net.cn
SQ4532EY
Automotive N-and P-Channel
30 V (D-S) 175 °C MOSFET
P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
11 / 15
www.freescale.net.cn
SQ4532EY
Automotive N-and P-Channel
30 V (D-S) 175 °C MOSFET
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
B
e
All Leads
q
A1
L
0.004"
MILLIMETERS
DIM
Min
INCHES
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
12 / 15
www.freescale.net.cn
SQ4532EY
Automotive N-and P-Channel
30 V (D-S) 175 °C MOSFET
Mounting LITTLE FOOT®, SO-8 Power MOSFETs
Wharton McDaniel
Surface-mounted LITTLE FOOT power MOSFETs use
integrated circuit and small-signal packages which have
been been modified to provide the heat transfer capabilities
required by power devices. Leadframe materials and
design, molding compounds, and die attach materials have
been changed, while the footprint of the packages remains
the same.
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, ( www.freescale.net.cn
), for the
basis of the pad design for a LITTLE FOOT SO-8 power
MOSFET. In converting this recommended minimum pad
to the pad set for a power MOSFET, designers must make
two connections: an electrical connection and a thermal
connection, to draw heat away from the package.
In the case of the SO-8 package, the thermal connections
are very simple. Pins 5, 6, 7, and 8 are the drain of the
MOSFET for a single MOSFET package and are connected
together. In a dual package, pins 5 and 6 are one drain, and
pins 7 and 8 are the other drain. For a small-signal device or
integrated circuit, typical connections would be made with
traces that are 0.020 inches wide. Since the drain pins serve
the additional function of providing the thermal connection
to the package, this level of connection is inadequate. The
total cross section of the copper may be adequate to carry
the current required for the application, but it presents a
large thermal impedance. Also, heat spreads in a circular
fashion from the heat source. In this case the drain pins are
the heat sources when looking at heat spread on the PC
board.
0.288
7.3
0.050
1.27
0.196
5.0
0.027
0.69
0.078
1.98
0.2
5.07
Figure 1. Single MOSFET SO-8 Pad
Pattern With Copper Spreading
13 / 15
0.288
7.3
0.050
1.27
0.088
2.25
0.088
2.25
0.027
0.69
0.078
1.98
0.2
5.07
Figure 2. Dual MOSFET SO-8 Pad Pattern
With Copper Spreading
The minimum recommended pad patterns for the
single-MOSFET SO-8 with copper spreading (Figure 1) and
dual-MOSFET SO-8 with copper spreading (Figure 2) show
the starting point for utilizing the board area available for the
heat-spreading copper. To create this pattern, a plane of
copper overlies the drain pins. The copper plane connects
the drain pins electrically, but more importantly provides
planar copper to draw heat from the drain leads and start the
process of spreading the heat so it can be dissipated into the
ambient air. These patterns use all the available area
underneath the body for this purpose.
Since surface-mounted packages are small, and reflow
soldering is the most common way in which these are
affixed to the PC board, “thermal” connections from the
planar copper to the pads have not been used. Even if
additional planar copper area is used, there should be no
problems in the soldering process. The actual solder
connections are defined by the solder mask openings. By
combining the basic footprint with the copper plane on the
drain pins, the solder mask generation occurs automatically.
A final item to keep in mind is the width of the power traces.
The absolute minimum power trace width must be
determined by the amount of current it has to carry. For
thermal reasons, this minimum width should be at least
0.020 inches. The use of wide traces connected to the drain
plane provides a low impedance path for heat to move away
from the device.
www.freescale.net.cn
SQ4532EY
Automotive N-and P-Channel
30 V (D-S) 175 °C MOSFET
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
14 / 15
www.freescale.net.cn
SQ4532EY
Automotive N-and P-Channel
30 V (D-S) 175 °C MOSFET
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively,
“freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vi shay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain type s of applications are based on freestyle’s knowledge of typical
requirements that are often placed on freestyle products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsib ility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. All
operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify freestyle’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, freestyle products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the freestyle product could result in personal injury or death.
Customers using or selling freestyle products not expressly indicated for use in such applications do so at their own risk and agr ee
to fully indemnify and hold freestyle and its distributors harmless from and against an y and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vis hay
Material Category Policy
freestyle Intertechnology, Inc. hereby certi fies that all its products that are id entified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwis e specified as non-compliant.
Please note that some freestyle documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002 /95/EC conform to Directive 2011/65/EU.
15 / 15
www.freescale.net.cn