SHENZHENFREESCALE SQ2360EES

SQ2360EES
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
60
RDS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
ID (A)
0.085
FEATURES
0.130
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedc
• 100 % Rg and UIS Tested
• Typical ESD Protection 800 V
• Compliant to RoHS Directive 2002/95/EC
4.4
Configuration
Single
D
TO-236
(SOT-23)
G
1
3
S
D
G
2
Top View
S
SQ2360EES
Marking Code: 8Mxxx
N-Channel MOSFET
ORDERING INFORMATION
Package
SOT-23
Lead (Pb)-free and Halogen-free
SQ2360EES-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
TC = 25 °C
TC = 125 °C
Continuous Source Current (Diode Conduction)
Pulsed Drain Currenta
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationa
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
V
4.4
2.5
IS
3.7
IDM
17
IAS
6
EAS
1.8
PD
UNIT
3
1
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
RthJA
166
RthJF
50
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
PCB Mountb
°C/W
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
1 / 10
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SQ2360EES
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS = 0, ID = 250 μA
60
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.5
-
2.5
VDS = 0 V, VGS = ± 20 V
IGSS
-
-
± 5.5
VGS = 0 V
VDS = 60 V
-
-
1
-
-
50
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
VDS = 60 V, TJ = 125 °C
VGS = 0 V
VDS = 60 V, TJ = 175 °C
-
-
150
On-State Drain Currenta
ID(on)
VGS = 10 V
VDS5 V
10
-
-
Drain-Source On-State
Resistancea
Forward Transconductanceb
RDS(on)
gfs
VGS = 10 V
ID = 6 A, TJ = 25 °C
-
0.058
0.085
VGS = 10 V
ID = 6 A, TJ = 125 °C
-
-
0.197
VGS = 10 V
ID = 6 A, TJ = 175 °C
-
-
0.258
VGS = 4.5 V
ID = 5 A
-
0.081
0.130
VDS = - 15 V, ID = 1.9 A
-
5.8
-
-
295
370
-
55
70
V
μA
μA
A


S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
-
35
55
Total Gate Chargec
Qg
-
7.40
12
Gate-Source
Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
Turn-On Delay
Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
VGS = 0 V
VDS = 25 V, f = 1 MHz
VGS = 10 V
VDS = 30 V, ID = 2 A
f = 1 MHz
td(on)
tr
td(off)
VDD = 30 V, RL = 15 
ID  2 A, VGEN = 10 V, Rg = 1 
tf
-
0.95
-
-
1.94
-
1.24
2.46
3.68
-
5
8
-
11
17
-
10
15
-
8
12
pF
nC

ns
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = 1.5 A, VGS = 0
-
-
17
A
-
0.8
1.2
V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2 / 10
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SQ2360EES
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10-2
0.005
I GSS - Gate Current (A)
0.003
TJ = 25 °C
0.002
10-4
TJ = 150 °C
10-6
TJ = 25 °C
10-8
0.001
0.000
10-10
0
6
12
18
24
VGS - Gate-to-Source Voltage (V)
30
0
Gate Current vs. Gate-Source Voltage
6
12
18
24
VGS - Gate-to-Source Voltage (V)
30
Gate Current vs. Gate-Source Voltage
12
12
VGS = 10 V thru 5 V
10
10
I D - Drain Current (A)
I D - Drain Current (A)
VGS = 4 V
8
6
4
2
8
6
4
TC = 25 °C
TC = 125 °C
2
VGS = 3 V
TC = - 55 °C
0
0
0
1
2
3
4
5
0
3
4
Output Characteristics
Transfer Characteristics
5
0.25
0.20
R DS(on) - On-Resistance (Ω)
TC = - 55 °C
6
TC = 25 °C
4
TC = 125 °C
2
0.15
0.10
VGS = 4.5 V
VGS = 10 V
0.05
0.00
0.4
0.8
1.2
I D - Drain Current (A)
Transconductance
3 / 10
2
VGS - Gate-to-Source Voltage (V)
8
0
0.0
1
VDS - Drain-to-Source Voltage (V)
10
g fs - Transconductance (S)
I GSS - Gate Current (mA)
0.004
1.6
2.0
0
2
4
6
8
ID - Drain Current (A)
10
12
On-Resistance vs. Drain Current
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SQ2360EES
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
600
10
VDS = 30 V
ID = 2 A
VGS - Gate-to-Source Voltage (V)
C - Capacitance (pF)
500
400
Ciss
300
200
Coss
100
8
6
4
2
Crss
0
0
0
10
20
30
40
50
60
0
2
8
10
0.3
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
1.5
Capacitance
10
ID = 1.5 A
2.1
VGS = 10 V
I S - Source Current (A)
R DS(on) - On-Resistance (Normalized)
6
Gate Charge
2.5
1.7
1.3
1
TJ = 25 °C
0.1
TJ = 150 °C
0.01
0.9
0.5
- 50
- 25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
0.001
0.0
175
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
0.5
0.5
0.4
0.2
VGS(th) Variance (V)
R DS(on) - On-Resistance (Ω)
4
Qg - Total Gate Charge (nC)
VDS - Drain-to-Source Voltage (V)
0.3
0.2
- 0.1
- 0.4
ID = 5 mA
ID = 250 µA
TJ = 125 °C
0.1
- 0.7
TJ = 25 °C
0.0
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-Source Voltage
4 / 10
10
- 1.0
- 50
- 25
0
25
50
75 100
TJ - Temperature (°C)
125
150
175
Threshold Voltage
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SQ2360EES
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
80
10
76
100 μs
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
IDM Limited
ID = 1 mA
72
68
Limited by RDS(on)*
1 ms
1
10 ms
100 ms
0.1
64
TC = 25 °C
Single Pulse
60
- 50
- 25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
0.01
0.01
175
BVDSS Limited
1s
10 s, DC
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Drain-Source Breakdown vs. Junction Temperature
Safe Operating Area
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 166 °C/W
3. TJM - T A = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
5 / 10
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SQ2360EES
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
6 / 10
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SQ2360EES
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
SOT-23 (TO-236): 3-LEAD
b
3
E1
1
E
2
e
S
e1
D
0.10 mm
C
0.004"
A2
A
C
q
Gauge Plane
Seating Plane
Seating Plane
C
A1
Dim
0.25 mm
L
L1
MILLIMETERS
INCHES
Min
Max
Min
Max
0.044
A
0.89
1.12
0.035
A1
0.01
0.10
0.0004
0.004
A2
0.88
1.02
0.0346
0.040
b
0.35
0.50
0.014
0.020
c
0.085
0.18
0.003
0.007
D
2.80
3.04
0.110
0.120
E
2.10
2.64
0.083
0.104
E1
1.20
1.40
0.047
e
0.95 BSC
e1
L
1.90 BSC
0.40
L1
q
0.0748 Ref
0.60
0.016
0.64 Ref
S
0.024
0.025 Ref
0.50 Ref
3°
0.055
0.0374 Ref
0.020 Ref
8°
3°
8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
7 / 10
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SQ2360EES
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
Mounting LITTLE FOOTR SOT-23 Power MOSFETs
Wharton McDaniel
Surface-mounted LITTLE FOOT power MOSFETs use integrated
circuit and small-signal packages which have been been modified
to provide the heat transfer capabilities required by power devices.
Leadframe materials and design, molding compounds, and die
attach materials have been changed, while the footprint of the
packages remains the same.
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, ( www.freescale.net.cn ), for the basis
of the pad design for a LITTLE FOOT SOT-23 power MOSFET
footprint . In converting this footprint to the pad set for a power
device, designers must make two connections: an electrical
connection and a thermal connection, to draw heat away from the
package.
ambient air. This pattern uses all the available area underneath the
body for this purpose.
0.114
2.9
0.081
2.05
0.150
3.8
0.059
1.5
0.0394
1.0
0.037
0.95
FIGURE 1. Footprint With Copper Spreading
The electrical connections for the SOT-23 are very simple. Pin 1 is
the gate, pin 2 is the source, and pin 3 is the drain. As in the other
LITTLE FOOT packages, the drain pin serves the additional
function of providing the thermal connection from the package to
the PC board. The total cross section of a copper trace connected
to the drain may be adequate to carry the current required for the
application, but it may be inadequate thermally. Also, heat spreads
in a circular fashion from the heat source. In this case the drain pin
is the heat source when looking at heat spread on the PC board.
Figure 1 shows the footprint with copper spreading for the SOT-23
package. This pattern shows the starting point for utilizing the
board area available for the heat spreading copper. To create this
pattern, a plane of copper overlies the drain pin and provides
planar copper to draw heat from the drain lead and start the
process of spreading the heat so it can be dissipated into the
8 / 10
Since surface-mounted packages are small, and reflow soldering
is the most common way in which these are affixed to the PC
board, “thermal” connections from the planar copper to the pads
have not been used. Even if additional planar copper area is used,
there should be no problems in the soldering process. The actual
solder connections are defined by the solder mask openings. By
combining the basic footprint with the copper plane on the drain
pins, the solder mask generation occurs automatically.
A final item to keep in mind is the width of the power traces. The
absolute minimum power trace width must be determined by the
amount of current it has to carry. For thermal reasons, this
minimum width should be at least 0.020 inches. The use of wide
traces connected to the drain plane provides a low-impedance
path for heat to move away from the device.
www.freescale.net.cn
SQ2360EES
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
0.049
(1.245)
0.029
0.022
(0.559)
(0.724)
0.037
(0.950)
(2.692)
0.106
RECOMMENDED MINIMUM PADS FOR SOT-23
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index Return to Index
9 / 10
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SQ2360EES
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. All
operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s
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Material Category Policy
freestyle Intertechnology, Inc. hereby certi fies that all its products that are id entified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwis e specified as non-compliant.
Please note that some freestyle documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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