SQ4050EY Automotive N-Channel 40 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® Power MOSFET 40 RDS(on) () at VGS = 10 V 0.0080 RDS(on) () at VGS = 4.5 V 0.0110 ID (A) • AEC-Q101 Qualified • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.freescale.net.cn 19 Configuration Single D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ORDERING INFORMATION Package SO-8 Lead (Pb)-free and Halogen-free SQ4050EY-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C TC = 125 °C Continuous Source Current (Diode Conduction) Pulsed Drain Currenta Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V 19 11 IS 5.5 IDM 75 IAS 34 EAS 58 PD UNIT 6 2 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT RthJA 85 RthJF 25 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) PCB Mountb °C/W Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. When mounted on 1" square PCB (FR-4 material). 1/6 www.freescale.net.cn SQ4050EY Automotive N-Channel 40 V (D-S) 175 °C MOSFET SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VGS = 0 V, ID = 250 μA 40 - - VDS = VGS, ID = 250 μA 1.5 2.0 2.5 VDS = 0 V, VGS = ± 20 V IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductanceb VDS VGS(th) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 40 V - - 1 VGS = 0 V VDS = 40 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 40 V, TJ = 175 °C - - 150 VGS = 10 V VDS5 V 30 - - VGS = 10 V ID = 10 A - 0.0063 0.0080 VGS = 10 V ID = 10 A, TC = 125 °C - - 0.0120 VGS = 10 V ID = 10 A, TC = 175 °C - - 0.0150 VGS = 4.5 V ID = 9 A - 0.0090 0.0110 - 51 - - 1925 2406 VDS = 15 V, ID = 10 A V nA μA A S Dynamicb Input Capacitance Ciss VGS = 0 V Output Capacitance Coss - 300 375 Reverse Transfer Capacitance Crss - 120 150 Total Gate Chargec Qg - 34 51 - 6.1 - - 5.6 - 0.2 0.47 1 - 16 24 - 9.3 14 - 33.5 50 - 9.6 14.5 - - 75 A - 0.75 1.1 V Gate-Source Chargec Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Qgs Fall Timec Source-Drain Diode Ratings and VGS = 10 V VDS = 20 V, ID = 14 A Qgd Rg f = 1 MHz td(on) tr Timec VDS = 20 V, f = 1 MHz td(off) VDD = 20 V, RL = 20 ID 1 A, VGEN = 10 V, Rg = 6 tf pF nC ns Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 3.5 A, VGS = 0 Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2/6 www.freescale.net.cn SQ4050EY Automotive N-Channel 40 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 50 50 VGS = 10 V thru 4 V 40 ID - Drain Current (A) ID - Drain Current (A) 40 30 20 10 30 TC = 25 °C 20 10 VGS = 3 V TC = 125 °C 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 0 10 1 3 4 5 Transfer Characteristics 0.025 100 TC = - 55 °C TC = 25 °C 0.020 RDS(on) - On-Resistance (Ω) 80 gfs - Transconductance (S) 2 VGS - Gate-to-Source Voltage (V) Output Characteristics 60 TC = 125 °C 40 20 0.015 VGS = 4.5 V 0.010 0.005 VGS = 10 V 0.000 0 0 5 10 15 20 0 25 10 20 30 40 50 ID - Drain Current (A) ID - Drain Current (A) On-Resistance vs. Drain Current Transconductance 10 3000 VGS - Gate-to-Source Voltage (V) 2500 C - Capacitance (pF) TC = - 55 °C 0 0 Ciss 2000 1500 1000 Coss 500 ID = 14 A 8 6 4 2 Crss 0 0 0 10 20 30 VDS - Drain-to-Source Voltage (V) Capacitance 3/6 40 0 5 10 15 20 25 30 35 Qg - Total Gate Charge (nC) Gate Charge www.freescale.net.cn 40 SQ4050EY Automotive N-Channel 40 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 2.5 ID = 14 A 10 IS - Source Current (A) RDS(on) - On-Resistance (Normalized) 2.1 1.7 VGS = 10 V 1.3 VGS = 4.5 V 1 0.1 TJ = 25 °C 0.01 0.9 0.001 0.5 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 175 0.08 0.2 VGS(th) Variance (V) 0.5 0.06 0.04 0 0.4 0.6 0.8 1.0 ID = 5 mA - 0.4 ID = 250 μA - 1.0 2 4 6 VGS - Gate-to-Source Voltage (V) 8 - 50 - 25 10 0 25 50 75 100 125 150 TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage VDS - Drain-to-Source Voltage (V) 52 ID = 1 mA 50 48 46 44 42 40 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature 4/6 1.2 - 0.1 - 0.7 TJ = 25 °C TJ = 150 °C 0.00 0.2 Source Drain Diode Forward Voltage 0.10 0.02 0.0 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature RDS(on) - On-Resistance (Ω) TJ = 150 °C www.freescale.net.cn 175 SQ4050EY Automotive N-Channel 40 V (D-S) 175 °C MOSFET THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 100 100 μs IDM Limited ID - Drain Current (A) 10 1 ms 10 ms 1 Limited by RDS(on)* 100 ms 1s 10 s, DC 0.1 BVDSS Limited TC = 25 °C Single Pulse 0.01 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. 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