SUD25N15-52 N-Channel 150 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) ID (A) 0.052 at VGS = 10 V 25 0.060 at VGS = 6 V 23 • • • • TrenchFET® Power MOSFET 175 °C Junction Temperature PWM Optimized 100 % Rg Tested APPLICATIONS TO-252 • Primary Side Switch D Drain Connected to Tab G D S G Top View Ordering Information: SUD25N15-52-E3 (Lead (Pb)- free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Symbol Limit Drain-Source Voltage Parameter VDS 150 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C 14.5 50 Continuous Source Current (Diode Conduction) IS 25 Avalanche Current IAR 25 EAR 31 Repetitive Avalanche Energy (Duty Cycle ≤ 1 %) Maximum Power Dissipation L = 0.1 mH TC = 25 °C TA = 25 °C A mJ 136b PD W 3a TJ, Tstg Operating Junction and Storage Temperature Range V 25 ID IDM Pulsed Drain Current Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta Junction-to-Case (Drain) Symbol t ≤ 10 s Steady State RthJA RthJC Typical Maximum 15 18 40 50 0.85 1.1 Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See SOA curve for voltage derating. 1/7 www.freescale.net.cn Unit °C/W SUD25N15-52 N-Channel 150 V (D-S) 175 °C MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage VDS VGS = 0 V, ID = 250 µA 150 VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 150 V, VGS = 0 V 1 VDS = 150 V, VGS = 0 V, TJ = 125 °C 50 Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) 4 VDS = 150 V, VGS = 0 V, TJ = 175 °C VDS = 5 V, VGS = 10 V Forward Transconductanceb RDS(on) µA A 0.042 0.052 VGS = 10 V, ID = 5 A, TJ = 125 °C 0.109 VGS = 10 V, ID = 5 A, TJ = 175 °C 0.145 gfs nA 250 50 VGS = 10 V, ID = 5 A Drain-Source On-State Resistanceb V VGS = 6 V, ID = 5 A 0.047 VDS = 15 V, ID = 25 A 40 Ω 0.060 S a Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c Gate-Drain Charge Qgd Gate Resistance Rg c td(on) Turn-Off Delay Timec td(off) Turn-On Delay Time Rise Timec Fall Timec tr 1725 VGS = 0 V, VDS = 25 V, f = 1 MHz 216 pF 100 33 VDS = 75 V, VGS = 10 V, ID = 25 A 40 nC 9 12 1 VDD = 50 V, RL = 3 Ω ID ≅ 25 A, VGEN = 10 V, Rg = 2.5 Ω tf 3 15 25 70 100 25 40 60 90 Ω ns Source-Drain Diode Ratings and Characteristics TC = 25 °C Pulsed Current ISM 50 A Diode Forward Voltageb VSD IF = 25 A, VGS = 0 V 0.9 1.5 V trr IF = 25 A, dI/dt = 100 A/µs 95 140 ns Source-Drain Reverse Recovery Time Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2/7 www.freescale.net.cn SUD25N15-52 N-Channel 150 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 50 VGS = 10 V thru 7 V 6V 40 I D - Drain Current (A) I D - Drain Current (A) 40 30 20 5V 10 30 20 TC = 125 °C 25 °C 10 - 55 °C 4V 0 0 0 2 4 6 8 0 10 1 2 Output Characteristics 40 125 °C 30 20 R DS(on) - On-Resistance (Ω) 25 °C TC = - 55 °C g fs - Transconductance (S) 5 6 7 0.10 50 10 0 0.08 0.06 VGS = 6 V VGS = 10 V 0.04 0.02 0.00 0 10 20 30 40 50 0 10 20 I D - Drain Current (A) 30 40 50 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 2500 VGS - Gate-to-Source Voltage (V) 20 2000 C - Capacitance (pF) 4 Transfer Characteristics 60 Ciss 1500 1000 500 Crss VDS = 75 V ID = 25 A 16 12 8 4 Coss 0 0 0 30 60 90 120 VDS - Drain-to-Source Voltage (V) Capacitance 3/7 3 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 150 0 10 20 30 40 50 Qg - Total Gate Charge (nC) Gate Charge www.freescale.net.cn 60 SUD25N15-52 N-Channel 150 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 3.0 VGS = 10 V ID = 5 A I S - Source Current (A) RDS(on) - On-Resistance (Normalized) 2.5 2.0 1.5 1.0 TJ = 150 °C 10 TJ = 25 °C 0.5 0.0 - 50 1 - 25 0 25 50 75 100 125 150 0 175 0.3 0.6 0.9 1.2 TJ - Junction Temperature ( °C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage THERMAL RATINGS 30 100 Limited by R DS(on)* 25 10 µs I D - Drain Current (A) I D - Drain Current (A) 100 µs 20 15 10 10 1 ms 10 ms 1 TC = 25 °C Single Pulse 5 0 0 25 50 75 100 125 TC - Case Temperature (°C) 150 175 0.1 0.1 Maximum Avalanche Drain Current vs. Case Temperature 100 ms 1 s, DC 1 10 1000 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case 4/7 www.freescale.net.cn 30 SUD25N15-52 N-Channel 150 V (D-S) 175 °C MOSFET TO-252AA CASE OUTLINE E A MILLIMETERS C1 e b1 D1 e1 E1 L gage plane height (0.5 mm) L1 b L3 H D L2 b2 C A2 A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.21 2.38 0.087 0.094 A1 0.89 1.14 0.035 0.045 A2 0.030 0.127 0.001 0.005 b 0.71 0.88 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.44 0.206 0.214 C 0.46 0.58 0.018 0.023 C1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 D1 4.10 4.45 0.161 0.175 E 6.48 6.73 0.255 0.265 E1 4.49 5.50 0.177 0.217 e e1 2.28 BSC 4.57 BSC 0.090 BSC 0.180 BSC H 9.65 10.41 0.380 L 1.40 1.78 0.055 0.070 L1 0.64 1.02 0.025 0.040 L2 0.89 1.27 0.035 0.050 L3 1.15 1.52 0.040 0.060 ECN: T11-0110-Rev. L, 18-Apr-11 DWG: 5347 Note • Dimension L3 is for reference only. 5/7 www.freescale.net.cn 0.410 SUD25N15-52 N-Channel 150 V (D-S) 175 °C MOSFET RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index 6/7 Return to Index www.freescale.net.cn SUD25N15-52 N-Channel 150 V (D-S) 175 °C MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, “freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. 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