SHENZHENFREESCALE SUD50P06-15

SUD50P06-15
P-Channel 60 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 60
RDS(on) ()
ID (A)
0.015 at VGS = - 10 V
- 50d
0.020 at VGS = - 4.5 V
- 50d
• TrenchFET® Power MOSFET
• Material categorization:
For definitions of compliance please see
APPLICATIONS
TO-252
• Load Switch
S
G
Drain Connected to Tab
D
G
S
Top View
Ordering Information
SUD50P06-15-GE3 (Lead (Pb)-free and Halogen-free)
SUD50P06-15-T4-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Symbol
Limit
Drain-Source Voltage
Parameter
VDS
- 60
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
TC = 125 °C
Pulsed Drain Current
Avalanche Current
a
Single Pulse Avalanche Energy
Power Dissipation
L = 0.1 mH
TC = 25 °C
TA = 25 °C
V
- 50d
ID
- 27.5
IDM
- 80
IAS
- 50
EAS
A
125
mJ
113c
PD
W
2.5b, c
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambientb
Junction-to-Case
Symbol
t  10 s
Steady State
RthJA
RthJC
Typical
Maximum
15
18
40
50
0.82
1.1
Notes:
a. Duty cycle  1 %.
b. When mounted on 1" square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Package limited.
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Unit
°C/W
SUD50P06-15
P-Channel 60 V (D-S) MOSFET
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 60
VGS(th)
VDS = VGS, ID = - 250 µA
-1
IGSS
VDS = 0 V, VGS = ± 20 V
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
-1
VDS = - 60 V, VGS = 0 V, TJ = 125 °C
- 50
VDS = - 60 V, VGS = 0 V, TJ = 150 °C
- 100
VDS = -5 V, VGS = - 10 V
VGS = - 10 V, ID = - 17 A
RDS(on)
± 100
VDS = - 60 V, VGS = 0 V
ID(on)
Drain-Source On-State Resistancea
-3
- 50
0.025
VGS = - 10 V, ID = - 50 A, TJ = 150 °C
0.028
Forward Transconductance
VDS = - 15 V, ID = - 17 A
µA
0.015
VGS = - 10 V, ID = - 50 A, TJ = 125 °C
gfs
nA
A
0.012
VGS = - 4.5 V, ID = - 14 A
a
V

0.020
61
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
405
Total Gate Chargec
Qg
110
c
4950
VGS = 0 V, VDS = - 25 V, f = 1 MHz
Gate-Source Charge
Qgs
Gate-Drain Chargec
Qgd
28
Turn-On Delay Timec
td(on)
15
Rise
Timec
Turn-Off Delay Timec
Fall Timec
tr
td(off)
VDS = - 30 V, VGS = - 10 V, ID = - 50 A
VDD = - 30 V, RL = 0.6 
ID  - 50 A, VGEN = - 10 V, RG = 6 
tf
Source-Drain Diode Ratings and Characteristics TC = 25
pF
480
165
nC
19
23
70
105
175
260
175
260
ns
°Cb
IS
- 50
Pulsed Current
ISM
- 80
Forward Voltagea
VSD
IF = - 50 A, VGS = 0 V
-1
- 1.6
V
trr
IF = - 50 A, dI/dt = 100 A/µs
45
70
ns
Continuous Current
Reverse Recovery Time
A
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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SUD50P06-15
P-Channel 60 V (D-S) MOSFET
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
80
80
VGS = 10 thru 4 V
70
70
60
I D - Drain Current (A)
I D - Drain Current (A)
60
50
40
30
3V
20
50
40
30
TC = 125 ° C
20
10
25 ° C
10
- 55 °C
0
0
1
2
3
4
0
0.0
5
0.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2.0
2.5
3.0
3.5
4.0
70
80
0.025
R DS(on) - On-Resistance (Ω)
25 °C
TC = - 55 °C
80
125 °C
60
40
20
0.020
VGS = 4.5 V
0.015
VGS = 10 V
0.010
0.005
0.000
0
0
10
20
30
40
50
0
60
10
20
VGS - Gate-to-Source Voltage (V)
30
40
50
60
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
8000
10
VGS - Gate-to-Source Voltage (V)
7000
6000
C - Capacitance (pF)
1.5
Transfer Characteristics
100
g fs - Transconductance (S)
1.0
VGS - Gate-to-Source Voltage (V)
Ciss
5000
4000
3000
2000
Coss
1000
Crss
0
0
6
4
2
0
10
20
30
40
VDS - Drain-to-Source Voltage (V)
Capacitance
3/7
VDS = 30 V
ID = 50 A
8
50
60
0
20
40
60
80
100
Qg - Total Gate Charge (nC)
Gate Charge
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120
SUD50P06-15
P-Channel 60 V (D-S) MOSFET
TYPICAL CHARACTERISTICS
100
VGS = 10 V
ID = 17 A
1.8
I S - Source Current (A)
R DS(on) - On-Resistance (Normalized)
2.0
1.6
1.4
1.2
1.0
TJ = 150 °C
TJ = 25 °C
10
0.8
1
0.6
- 50
- 25
0
25
50
75
100
125
0.0
150
0.3
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
TJ - Junction Temperature (°C)
1.5
Source-Drain Diode Forward Voltage
On-Resistance vs. Junction Temperature
THERMAL RATINGS (25 °C, unless otherwise noted)
100
60
Limited by R DS(on)*
P(t) = 0.0001
I D - Drain Current (A)
I D - Drain Current (A)
50
40
30
20
BVDSS
Limited
10
P(t) = 0.001
10
P(t) = 0.01
TC = 25 °C
Single Pulse
0
0
25
50
75
100
125
TC - Case Temperature (°C)
150
1
0.1
P(t) = 0.1
P(t) = 1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Drain Current vs. Case Temperature
Safe Operating Area
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
Square Wave Pulse Duration (s)
10 -1
Normalized Thermal Transient Impedance, Junction-to-Case
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1
SUD50P06-15
P-Channel 60 V (D-S) MOSFET
TO-252AA CASE OUTLINE
E
A
MILLIMETERS
C1
e
b1
D1
e1
E1
L
gage plane height (0.5 mm)
L1
b
L3
H
D
L2
b2
C
A2
A1
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.21
2.38
0.087
0.094
A1
0.89
1.14
0.035
0.045
A2
0.030
0.127
0.001
0.005
b
0.71
0.88
0.028
0.035
b1
0.76
1.14
0.030
0.045
b2
5.23
5.44
0.206
0.214
C
0.46
0.58
0.018
0.023
C1
0.46
0.58
0.018
0.023
D
5.97
6.22
0.235
0.245
D1
4.10
4.45
0.161
0.175
E
6.48
6.73
0.255
0.265
E1
4.49
5.50
0.177
0.217
e
e1
2.28 BSC
4.57 BSC
0.090 BSC
0.180 BSC
H
9.65
10.41
0.380
L
1.40
1.78
0.055
0.070
L1
0.64
1.02
0.025
0.040
L2
0.89
1.27
0.035
0.050
L3
1.15
1.52
0.040
0.060
ECN: T11-0110-Rev. L, 18-Apr-11
DWG: 5347
Note
• Dimension L3 is for reference only.
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0.410
SUD50P06-15
P-Channel 60 V (D-S) MOSFET
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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SUD50P06-15
P-Channel 60 V (D-S) MOSFET
Disclaimer
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freestyle Intertechnology, Inc. hereby certi fies that all its products that are id entified as RoHS-Compliant fulfill the
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