SUD50P04-08 P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.0081 at VGS = - 10 V - 50d 0.0117 at VGS = - 4.5 V - 48d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 60 APPLICATIONS • Power Switch • Load Switch in High Current Applications • DC/DC Converters S TO-252 G Drain Connected to Tab G D S D Top View P-Channel MOSFET Ordering Information: SUD50P04-08-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Symbol Limit Drain-Source Voltage Parameter VDS - 40 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C Pulsed Drain Current Avalanche Current a L = 0.1 mH Single Avalanche Energy TC = 25 °C Maximum Power Dissipationa TA = 25 °C Operating Junction and Storage Temperature Range c ID V - 50d - 50d IDM - 100 IAS - 46 EAS 106 PD Unit 73.5 A mJ b 2.5 W TJ, Tstg - 55 to 150 °C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount) c Junction-to-Case (Drain) RthJA 50 RthJC 1.7 Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). d. Package limited. 1/8 www.freescale.net.cn °C/W SUD50P04-08 P-Channel 40-V (D-S) MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VDS = 0 V, ID = - 250 µA - 40 VGS(th) VDS = VGS, ID = - 250 µA -1 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS - 2.5 ± 250 VDS = - 40 V, VGS = 0 V -1 VDS = - 40 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 40 V, VGS = 0 V, TJ = 150 °C - 250 VDS ≤ - 10 V, VGS = - 10 V ID(on) RDS(on) gfs - 50 V nA µA A VGS = - 10 V, ID = - 22 A 0.0067 0.0081 VGS = - 4.5 V, ID = - 19 A 0.0097 0.0117 VDS = - 15 V, ID = - 22 A 45 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Turn-On Delay Timec Rise Timec VDS = - 20 V, VGS = - 10 V, ID = - 20 A VDS = - 20 V, VGS = - 4.5 V, ID = - 20 A Fall Timec td(off) 106 159 60 90 22 f = 1 MHz VDD = - 20 V, RL = 2 Ω ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω tf Drain-Source Body Diode Ratings and Characteristics TC = 25 °C 0.4 1.8 3.6 15 23 12 18 70 105 18 27 - 50 Pulsed Current ISM - 100 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = - 10 A, VGS = 0 V - 0.8 IF = - 10 A, dI/dt = 100 A/µs 33 trr IRM(REC) Qrr Ω ns b IS Continuous Current nC 27 td(on) tr c pF 570 500 Rg Gate Resistance Turn-Off Delay Time 5380 VGS = 0 V, VDS = - 20 V, f = 1 MHz A - 1.5 V 35 53 ns -2 -3 A 50 nC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2/8 www.freescale.net.cn SUD50P04-08 P-Channel 40-V (D-S) MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.015 VGS = 10 V thru 5 V I D - Drain Current (A) R DS(on) - On-Resistance (Ω) VGS = 4 V 80 60 40 20 0.012 VGS = 4.5 V 0.009 VGS = 10 V 0.006 VGS = 3 V 0 0.0 0.003 0.5 1.0 1.5 2.0 2.5 0 20 40 VDS - Drain-to-Source Voltage (V) 80 100 ID - Drain Current (A) Output Characteristics On-Resistance vs. Drain Current 10 0.030 8 0.024 R DS(on) - On-Resistance (Ω) I D - Drain Current (A) 60 6 4 TC = 25 °C 0.018 TJ = 150 °C 0.012 TJ = 25 °C 0.006 2 TC = 125 °C TC = - 55 °C 0 0 1 2 3 0.000 2 4 VGS - Gate-to-Source Voltage (V) 8 10 On-Resistance vs. Gate-to-Source Voltage 10 100 ID = 20 A VGS - Gate-to-Source Voltage (V) TC = - 55 °C g fs - Transconductance (S) 6 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 75 TC = 25 °C TC = 125 °C 50 25 8 VDS = 20 V 6 VDS = 10 V VDS = 32 V 4 2 0 0 0 3/8 4 10 20 30 40 50 0 30 60 90 ID - Drain Current (A) Qg - Total Gate Charge (nC) Transconductance Gate Charge www.freescale.net.cn 120 SUD50P04-08 P-Channel 40-V (D-S) MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 - 1.0 10 ID = 250 µA VGS(th) (V) I S - Source Current (A) - 1.3 TJ = 150 °C TJ = 25 °C - 1.6 - 1.9 1 - 2.2 0.1 0.0 0.3 0.6 0.9 - 2.5 - 50 1.2 0 25 50 75 VSD - Source-to-Drain Voltage (V) TJ - Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage 8000 100 125 150 100 125 150 VDS - Drain-to-Source Voltage (V) - 43 6000 C - Capacitance (pF) - 25 Ciss 4000 2000 Coss ID = 250 µA - 45 - 47 - 49 Crss 0 0 10 20 30 - 51 - 50 40 - 25 0 25 50 75 VDS - Drain-to-Source Voltage (V) TJ - Junction Temperature (°C) Capacitance Drain Source Breakdown vs. Junction Temperature 80 2.0 ID = 20 A 60 I D - Drain Current (A) VGS = 10 V (Normalized) R DS(on) - On-Resistance 1.7 1.4 VGS = 4.5 V 1.1 Package Limited 40 20 0.8 0.5 - 50 4/8 0 - 25 0 25 50 75 100 125 150 0 25 50 75 100 TJ - Junction Temperature (°C) TC - Case Temperature (°C) On-Resistance vs. Junction Temperature Current Derating 125 www.freescale.net.cn 150 SUD50P04-08 P-Channel 40-V (D-S) MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 1000 Limited by RDS(on)* 100 I D - Drain Current (A) I DAV (A) 100 µA TJ = 25 °C TJ = 150 °C 10 10 1 0.1 1 10-5 10-4 10-3 10-2 1 ms 10 ms, 100 ms 1 s, 10 s, DC TC = 25 °C Single Pulse 0.01 0.1 10-1 Time (s) BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Single Pulse Avalanche Current Capability vs. Time Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 5/8 www.freescale.net.cn 100 SUD50P04-08 P-Channel 40-V (D-S) MOSFET TO-252AA CASE OUTLINE E A MILLIMETERS C1 e b1 D1 e1 E1 L gage plane height (0.5 mm) L1 b L3 H D L2 b2 C A2 A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.21 2.38 0.087 0.094 A1 0.89 1.14 0.035 0.045 A2 0.030 0.127 0.001 0.005 b 0.71 0.88 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.44 0.206 0.214 C 0.46 0.58 0.018 0.023 C1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 D1 4.10 4.45 0.161 0.175 E 6.48 6.73 0.255 0.265 E1 4.49 5.50 0.177 0.217 e e1 2.28 BSC 4.57 BSC 0.090 BSC 0.180 BSC H 9.65 10.41 0.380 L 1.40 1.78 0.055 0.070 L1 0.64 1.02 0.025 0.040 L2 0.89 1.27 0.035 0.050 L3 1.15 1.52 0.040 0.060 ECN: T11-0110-Rev. L, 18-Apr-11 DWG: 5347 Note • Dimension L3 is for reference only. 6/8 www.freescale.net.cn 0.410 SUD50P04-08 P-Channel 40-V (D-S) MOSFET RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index 7/8 Return to Index www.freescale.net.cn SUD50P04-08 P-Channel 40-V (D-S) MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, “freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain type s of applications are based on freestyle’s knowledge of typical requirements that are often placed on freestyle products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsib ility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. All operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify freestyle’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, freestyle products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the freestyle product could result in personal injury or death. Customers using or selling freestyle products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold freestyle and its distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vis hay Material Category Policy freestyle Intertechnology, Inc. hereby certi fies that all its products that are id entified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwis e specified as non-compliant. Please note that some freestyle documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002 /95/EC conform to Directive 2011/65/EU. 8/8 www.freescale.net.cn