SUD30N03-30 N-Channel 30 V (D-S) 175 °C MOSFET VDS (V) 30 rDS(on) () ID (A) 0.030 @ VGS = 10 V 30 0.045 @ VGS = 4.5 V 25 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD30N03-30 S N-Channel MOSFET Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 TC = 25C Continuous Drain Current (TJ = 175C) TC = 100C Pulsed Drain Current Continuous Source Current (Diode Conduction) TC = 25C Maximum Power Dissipation TA = 25C Operating Junction and Storage Temperature Range ID V 30 21 IDM 40 IS 30 PD Unit 50 3a A W TJ, Tstg –55 to 175 C Symbol Limit Unit Parameter Maximum Junction-to-Ambient RthJA 50 Maximum Junction-to-Case RthJC 3.0 Notes a. Surface Mounted on 4” x 4” FR4 Board. 1/5 www.freescale.net.cn C/W SUD30N03-30 N-Channel 30 V (D-S) 175 °C MOSFET Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 mA 30 VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 125C 50 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Z G V l D i Current C IDSS On-State Drain Currentb ID(on) V VDS = 30 V, VGS = 0 V, TJ = 175C b D i S O S R i Drain-Source On-State Resistance rDS(on) VDS = 5 V, VGS = 10 V gfs A VGS = 10 V, ID = 15 A 0.020 0.030 VGS = 10 V, ID = 15 A, TJ = 125C 0.033 0.050 VGS = 10 V, ID = 15 A, TJ = 175C 0.036 0.054 0.030 0.045 VDS = 15 V, ID = 15 A mA A 150 30 VGS = 4.5 V, ID = 12.5 A Forward Transconductanceb nA 10 22 W S Dynamica Input Capacitance Ciss 1170 VGS = 0 V, VDS = 25 V, f = 1 MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 60 Total Gate Chargec Qg 18 pF F 320 35 Gate-Source Chargec Qgs Gate-Drain Chargec Qgd 2 Turn-On Delay Timec td(on) 10 20 10 20 25 40 15 30 Rise Timec tr Turn-Off Delay Timec Fall Timec td(off) VDS = 15 V, V, ID = 30 A V VGS = 10 V VDD = 15 V V,, RL = 0 0.5 5W A VGEN = 10 V 5W ID ^ 30 A, V, RG = 7 7.5 tf nC C 5.5 ns Source-Drain Diode Ratings and Characteristic (TC = 25C) Pulsed Current ISM 40 A Voltageb VSD IF = 30 A, VGS = 0 V 1.1 1.5 V Source-Drain Reverse Recovery Time trr IF = 30 A, di/dt = 100 A/ms 50 100 ns Diode Forward Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. 2/5 www.freescale.net.cn SUD30N03-30 N-Channel 30 V (D-S) 175 °C MOSFET Output Characteristics Transfer Characteristics 40 40 VGS = 10, 9, 8, 7, 6, 5 V 32 I D – Drain Current (A) I D – Drain Current (A) 32 24 4V 16 8 24 16 TC = 150C 8 25C –55C 3V 0 0 0 1 2 3 4 5 0 1 VDS – Drain-to-Source Voltage (V) 2 3 4 5 6 VGS – Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 0.07 30 TC = –55C 18 r DS(on) – On-Resistance ( Ω ) g fs – Transconductance (S) 0.06 25C 24 125C 12 6 0 0.05 0.04 VGS = 4.5 V 0.03 VGS = 10 V 0.02 0.01 0 0 8 16 24 32 0 40 8 16 ID – Drain Current (A) 32 40 ID – Drain Current (A) Capacitance Gate Charge 1500 10 V GS – Gate-to-Source Voltage (V) Ciss 1200 C – Capacitance (pF) 24 900 Coss 600 300 Crss 0 VDS = 15 V ID = 30 A 8 6 4 2 0 0 6 12 18 24 VDS – Drain-to-Source Voltage (V) 3/5 30 0 3 6 9 12 15 Qg – Total Gate Charge (nC) www.freescale.net.cn 18 SUD30N03-30 N-Channel 30 V (D-S) 175 °C MOSFET On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1.8 100 VGS = 10 V ID = 15 A I S – Source Current (A) r DS(on) – On-Resistance ( Ω ) (Normalized) 1.6 1.4 1.2 1.0 TJ = 175C 10 TJ = 25C 0.8 0.6 –50 1 –25 0 25 50 75 100 125 150 175 0.3 0 TJ – Junction Temperature (C) 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) Maximum Drain Current vs. CaseTemperature Safe Operating Area 200 35 Limited by rDS(on) 100 I D – Drain Current (A) I D – Drain Current (A) 28 21 14 1 ms 10 10 ms 100 ms dc 1 TC = 25C Single Pulse 7 0 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) TC – Case Temperature (C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 4/5 www.freescale.net.cn 3 SUD30N03-30 N-Channel 30 V (D-S) 175 °C MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, “freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. 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