SUD50N03-12P N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) () ID (A) 0.0120 at VGS = 10 V 17.5 0.0175 at VGS = 4.5 V 14.5 • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested TO-252 D G Drain Connected to Tab G D S Top View S Ordering Information: SUD50N03-12P-E3 (Lead (PB) free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Symbol Limit Drain-Source Voltage Parameter VDS 30 Gate-Source Voltage VGS ± 20 TA = 25 °C Continuous Drain Currenta TA = 100 °C Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH TC = 25 °C Maximum Power Dissipation TA = 25 °C V 17.5 ID 12.4 IDM 40 IS 5 IAS 30 EAS 45 A mJ 46.8 PD W 6.5a TJ, Tstg Operating Junction and Storage Temperature Range Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Symbol a Maximum Junction-to-Case t 10 s Steady State RthJA RthJC Typical Maximum 18 23 40 50 2.6 3.2 Note: a. Surface mounted on FR4 board, t 10 s. 1/7 www.freescale.net.cn Unit °C/W SUD50N03-12P N-Channel 30 V (D-S) MOSFET SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min . Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage VDS VGS(th) IGSS 30 1 Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 125 °C VDS =5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TJ = 125 °C VGS = 4.5 V, ID = 15 A VDS = 15 V, ID = 20 A Drain-Source On-State Resistanceb RDS(on) Forward Transconductanceb Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance gfs Typ.a Max. Unit V 3 ± 100 1 50 nA µA 40 A 0.0100 0.0120 0.0170 0.0175 0.0138 15 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Coss Crss Qg Total Gate Chargec c VDS = 15 V, VGS = 10 V, ID = 50 A Q Gate-Source Charge gs c Q Gate-Drain Charge gd f = 1 MHz Gate Resistance Rg c t Turn-On Delay Time d(on) VDD = 15 V, RL = 0.3 tr Rise Timec ID 50 A, VGEN = 10 V, RG = 2.5 td(off) Turn-Off Delay Timec tf Fall Timec Source-Drain Diode Ratings and Characteristics (TC = 25 °C) Pulsed Current ISM VSD IF = 40 A, VGS = 0 V Diode Forward Voltageb IF = 50 A, dI/dt = 100 A/µs Source-Drain Reverse Recovery Time trr S 0.3 1600 285 140 28 6 5 1.5 9 15 20 12 3.0 15 25 30 20 1.2 25 100 1.5 70 pF 42 nC ns A V ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 µs, duty cycle 2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 °C unless noted) 80 80 60 60 40 I D - Drain Current (A) I D - Drain Current (A) VGS = 10 thru 5 V 4V 20 40 TC = 125 °C 20 25 °C 3V 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) Output Characteristics 2/7 - 55 °C 5 0 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Transfer Characteristics www.freescale.net.cn SUD50N03-12P N-Channel 30 V (D-S) MOSFET TYPICAL CHARACTERISTICS (25 °C unless noted) 80 0.05 60 R DS(on) - On-Resistance () g fs - Transconductance (S) TC = - 55 °C 25 °C 125 °C 40 20 0 0.04 0.03 VGS = 4.5 V 0.02 VGS = 10 V 0.01 0.00 0 10 20 30 40 50 0 20 40 Transconductance V GS - Gate-to-Source Voltage (V) 10 2000 Ciss 1500 1000 500 Coss Crss 0 VDS = 15 V ID = 50 A 8 6 4 2 0 0 5 10 15 20 25 30 0 6 VDS - Drain-to-Source Voltage (V) 12 Capacitance 24 30 Gate Charge 1.8 1.6 18 Qg - Total Gate Charge (nC) 100 VGS = 10 V ID = 15 A I S - Source Current (A) C - Capacitance (pF) 80 On-Resistance vs. Drain Current 2500 RDS(on) - On-Resistance (Normalized) 60 ID - Drain Current (A) ID - Drain Current (A) 1.4 1.2 1.0 TJ = 150 °C TJ = 25 °C 10 0.8 0.6 - 50 3/7 1 - 25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage www.freescale.net.cn 1.5 SUD50N03-12P N-Channel 30 V (D-S) MOSFET THERMAL RATINGS 1000 20 Limited by R DS(on) * 100 ID - Drain Current (A) I D - Drain Current (A) 16 12 8 10, 100 µs 10 1 ms 10 ms 100 ms 1 1s 0 0 25 50 75 100 125 TA - Ambient Temperature (°C) 150 0.01 175 10 s TA = 25 °C Single Pulse 0.1 4 0.1 DC, 100 s 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Maximum Drain Current vs. Ambient Temperature Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 100 Normalized Thermal Transient Impedance, Junction-to-Case 4/7 www.freescale.net.cn SUD50N03-12P N-Channel 30 V (D-S) MOSFET TO-252AA CASE OUTLINE E A MILLIMETERS C1 e b1 D1 e1 E1 L gage plane height (0.5 mm) L1 b L3 H D L2 b2 C A2 A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.21 2.38 0.087 0.094 A1 0.89 1.14 0.035 0.045 A2 0.030 0.127 0.001 0.005 b 0.71 0.88 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.44 0.206 0.214 C 0.46 0.58 0.018 0.023 C1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 D1 4.10 4.45 0.161 0.175 E 6.48 6.73 0.255 0.265 E1 4.49 5.50 0.177 0.217 e e1 2.28 BSC 4.57 BSC 0.090 BSC 0.180 BSC H 9.65 10.41 0.380 L 1.40 1.78 0.055 0.070 L1 0.64 1.02 0.025 0.040 L2 0.89 1.27 0.035 0.050 L3 1.15 1.52 0.040 0.060 ECN: T11-0110-Rev. L, 18-Apr-11 DWG: 5347 Note • Dimension L3 is for reference only. 5/7 www.freescale.net.cn 0.410 SUD50N03-12P N-Channel 30 V (D-S) MOSFET RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index 6/7 Return to Index www.freescale.net.cn SUD50N03-12P N-Channel 30 V (D-S) MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, “freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. 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