DINTEK DTL9826

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N-Channel 100-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
ID (A)
200
0.030 at VGS = 10 V
65a
•
•
•
•
TrenchFET® Power MOSFET
175 °C Junction Temperature
Low Thermal Resistance Package
100 % Rg Tested
RoHS
COMPLIANT
APPLICATIONS
• Isolated DC/DC Converters
TO-220AB
D
G
S
G D S
N-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Symbol
Limit
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
± 20
Parameter
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
TC = 125 °C
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
b
Maximum Power Dissipationb
L = 0.1 mH
TC = 25 °C
TA = 25 °C
d
Operating Junction and Storage Temperature Range
ID
Unit
V
65a
37a
IDM
140
IAS
35
EAS
61
A
mJ
c
PD
375
3.75
W
TJ, Tstg
- 55 to 175
°C
Symbol
Limit
Unit
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount
(TO-263)d
RthJA
40
RthJC
0.4
°C/W
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve for voltage derating.
d. When Mounted on 1" square PCB (FR-4 material).
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
V(BR)DSS
VDS = 0 V, ID = 250 µA
100
VGS(th)
VDS = VGS, ID = 250 µA
2
IGSS
VDS = 0 V, VGS = ± 20 V
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
± 100
VDS = 100 V, VGS = 0 V
1
VDS = 100 V, VGS = 0 V, TJ = 125 °C
50
VDS = 100 V, VGS = 0 V, TJ = 175 °C
250
VDS ≥ 5 V, VGS = 10 V
ID(on)
120
VGS = 10 V, ID = 30 A
Drain-Source On-State Resistancea
4
gfs
VDS = 15 V, ID = 30 A
µA
0.030
0.063
VGS = 10 V, ID = 30 A, TJ = 175 °C
Forward Transconductancea
nA
A
0.023
VGS = 10 V, ID = 30 A, TJ = 125 °C
rDS(on)
V
Ω
0.084
S
25
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
c
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Time
5100
VGS = 0 V, VDS = 25 V, f = 1 MHz
90
VDS = 100 V, VGS = 10 V, ID = 65 A
Fall Timec
pF
td(off)
130
23
nC
34
0.5
td(on)
tr
c
480
210
VDD = 100 V, RL = 1.5 Ω
ID ≅ 65 A, VGEN = 10 V, Rg = 2.5 Ω
tf
Source-Drain Diode Ratings and Characteristics TC = 25
1.7
3.3
24
35
220
330
45
70
200
300
65
Pulsed Current
ISM
140
Forward Voltagea
VSD
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = 65 A, VGS = 0 V
trr
IRM(REC)
Qrr
ns
°Cb
IS
Continuous Current
Ω
IF = 50 A, di/dt = 100 A/µs
A
1.0
1.5
V
130
200
ns
8
12
A
0.52
1.2
µC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
140
140
VGS = 10 thru 7 V
6V
120
I D - Drain Current (A)
I D - Drain Current (A)
120
100
80
60
40
100
80
60
TC = 125 °C
40
5V
20
25 °C
20
4V
- 55 °C
0
0
0
2
4
6
8
10
0
1
VDS - Drain-to-Source Voltage (V)
2
3
4
5
6
7
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
180
0.060
TC = - 55 °C
r DS(on) - On-Resistance (Ω)
g fs - Transconductance (S)
150
25 °C
120
125 °C
90
60
0.045
VGS = 10 V
0.030
0.015
30
0.000
0
0
20
40
60
80
100
0
120
20
40
80
100
120
ID - Drain Current (A)
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
7000
20
VGS - Gate-to-Source Voltage (V)
6000
Ciss
C - Capacitance (pF)
60
5000
4000
3000
2000
Crss
1000
VDS = 100 V
ID = 65 A
16
12
8
4
Coss
0
0
0
25
50
75
100
125
150
0
25
50
75
100
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
125
150
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
3.0
100
VGS = 10 V
ID = 30 A
I S - Source Current (A)
2.0
(Normalized)
rDS(on) - On-Resistance
2.5
1.5
1.0
TJ = 150 °C
TJ = 25 °C
10
0.5
0.0
- 50
- 25
0
25
50
75
100
125
150
1
0
175
0.3
TJ - Junction Temperature (°C)
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1000
240
230
ID = 1.0 mA
100
V(BR)DSS (V)
I Dav (A)
220
IAV (A) at TA = 25 °C
10
210
200
1
190
IAV (A) at TA = 150 °C
0.1
0.00001
0.0001
0.001
0.01
0.1
tin (s)
Avalanche Current vs. Time
4
1
180
- 50
- 25
0
25
50
75
100
125
TJ - Junction Temperature (°C)
Drain Source Breakdown
vs. Junction Temperature
150
175
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THERMAL RATINGS
1000
75
rDS(on)
Limited*
60
10 µs
I D - Drain Current (A)
I D - Drain Current (A)
100
45
30
100 µs
10
1
15
0
25
0
50
75
100
125
150
0.1
0.1
175
TC = 25 °C
Single Pulse
1
10
1 ms
10 ms
100 ms
DC
100
1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which rDS(on) is specified
TC - Ambient Temperature (°C)
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
5
Package Information
TO-220AB
MILLIMETERS
A
E
F
D
H(1)
Q
ØP
3
2
L(1)
1
M*
L
b(1)
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
4.25
4.65
0.167
0.183
b
0.69
1.01
0.027
0.040
b(1)
1.20
1.73
0.047
0.068
c
0.36
0.61
0.014
0.024
D
14.85
15.49
0.585
0.610
E
10.04
10.51
0.395
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.09
6.48
0.240
0.255
J(1)
2.41
2.92
0.095
0.115
L
13.35
14.02
0.526
0.552
L(1)
3.32
3.82
0.131
0.150
ØP
3.54
3.94
0.139
0.155
Q
2.60
3.00
0.102
0.118
ECN: X12-0208-Rev. N, 08-Oct-12
DWG: 5471
Notes
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
C
b
e
J(1)
e(1)
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