SUD50N025-09BP N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0086 @ VGS = 10 V 62 0.012 @ VGS = 4.5 V 52 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 18 5 nC 18.5 RoHS COMPLIANT APPLICATIONS D DC/DC Conversion, High-Side – Desktop PC TO-252 D G Drain Connected to Tab G D S Top View S N-Channel MOSFET Ordering Information: SUD50N025-09BP—E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Symbol Limit Drain-Source Voltage Parameter VDS 25 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 175_C) TA = 25_C 51e ID 26b, c 22b, c TA = 70_C Pulsed Drain Current IDM Continuous Source-Drain Source Drain Diode Current TC = 25_C TA = 25_C Avalanche Current Pulse L=0 0.1 1 mH Single Pulse Avalanche Energy TC = 70_C TA = 25_C 37 IS 6.7b, c IAS 28 EAS 39.2 mJ 55 39 PD W 10b, c 7b, c TA = 70_C Operating Junction and Storage Temperature Range A 100 TC = 25_C Maximum Power Dissipation V 62e TC = 25_C TC = 70_C Unit TJ, Tstg _C –55 to 175 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Case Symbol Typical Maximum t p 10 sec RthJA 12 15 Steady State RthJC 2.2 2.7 Unit _C/W Notes: a. Based on TC = 25_C. b. Surface mounted on 1” x 1” FR4 board. c. t = 10 sec d. Maximum under steady state conditions is 50 _C/W. e. Calculated based on maximum junction temperature. Package limitation current is 50 A. 1/7 www.freescale.net.cn SUD50N025-09BP N-Channel 25-V (D-S) MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VDS VGS = 0 V, ID = 250 mA 25 Typ Max Unit Static Drain-Source Breakdown Voltage DVDS/TJ VDS Temperature Coefficient DVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA IGSS Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) Forward Transconductancea gfs 20 ID = 250 mA VGS(th) Temperature Coefficient V mV/_C – 6.3 1.2 2.4 V VDS = 0 V, VGS = "20 V "100 nA VDS = 25 V, VGS = 0 V 1 VDS = 25 V, VGS = 0 V, TJ = 55_C 10 VDS w 5 V, VGS = 10 V 100 A mA A VGS = 10 V, ID = 26 A 0.007 0.0086 VGS = 4.5 V, ID = 22 A 0.0096 0.012 VDS = 15 V, ID = 26 A 46 W S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 2020 VDS = 12 V, VGS = 0 V, f = 1 MHz 245 VDS = 12 V, VGS = 10 V, ID = 26 A VDS = 12 V, VGS = 4.5 V, ID= 26 A 38 57 18.5 28 nC 7 6.5 f = 1 MHz td(on) tr pF p 485 0.9 1.4 9 14 8 12 20 30 tf 8 12 td(on) 17 26 15 23 17 26 8 12 td(off) tr td(off) VDD = 12 V, RL = 0.54 W ID ^ 22 A, VGEN = 10 V, Rg = 1 W VDD = 12 V, RL = 0.54 W ID ^ 22 A, VGEN = 4.5 V, Rg = 1 W tf W ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD TC = 25_C 37 100 IS = 6.7 A 0.9 1.5 A V Body Diode Reverse Recovery Time trr 26 40 ns Body Diode Reverse Recovery Charge Qrr 16 24 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 6 6.7 7A A, di/dt = 100 A/ms A/ms, TJ = 25_C 12 14 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2/7 www.freescale.net.cn SUD50N025-09BP N-Channel 25-V (D-S) MOSFET TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 100 20 I D – Drain Current (A) I D – Drain Current (A) VGS = 10 V thru 5 V 80 4V 60 40 20 0.5 1.0 1.5 2.0 TC = –55_C 12 TC = 25_C 8 TC =125_C 4 3V 0 0.0 16 2.5 0 1.0 3.0 1.5 VDS – Drain-to-Source Voltage (V) 2.0 3.0 3.5 VGS – Gate-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current 0.0200 3000 0.0175 2500 C – Capacitance (pF) rDS(on) – On-Resistance (W) 2.5 0.0150 0.0125 VGS = 4.5 V 0.0100 Ciss 2000 1500 1000 Coss 0.0075 500 VGS = 10 V Crss 0 0.0050 0 20 40 60 80 0 100 5 ID – Drain Current (A) 15 20 VDS – Drain-to-Source Voltage (V) On-Resistance vs. Junction Temperature Gate Charge 10 1.8 ID = 20 A ID = 26 A 1.6 rDS(on) – On-Resistance (Normalized) 8 VDS = 12 V VGS (V) 10 6 VDS = 18 V 4 2 1.4 VGS = 4.5 V, 10 V 1.2 1.0 0.8 0 0 10 20 Qg (nC) 3/7 30 40 0.6 –50 –25 0 25 50 75 100 125 TJ – Junction Temperature www.freescale.net.cn 150 175 SUD50N025-09BP N-Channel 25-V (D-S) MOSFET TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage rDS(on) vs VGS vs. Temperature 100 0.024 rDS(on) On-Resistance (W) I S – Source Current (A) ID = 20 A TJ = 150_C 10 TJ = 25_C 0.018 TA = 125_C 0.012 0.006 TA = 25_C 0.000 1 0.3 0.6 0.9 0 1.2 2 VSD – Source-to-Drain Voltage (V) 4 6 8 10 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Junction-to-Ambient 2.3 720 2.1 600 1.9 480 Power (W) 1.5 1.3 TA = 25_C 360 240 1.1 0.9 120 0.7 0.5 –50 –25 0 25 50 75 100 125 150 0 0.001 175 0.01 TJ – Temperature (_C) 0.1 1 10 100 Time (sec) Safe Operating Area 1000 *Limited by rDS(on) 100 1 ms 10 ID (A) VGS(th) – (V) ID = 250 mA 1.7 10 ms 100 ms 1 1 10 DC 0.10 0.01 0.001 0.1 TA = 25_C Single Pulse 1 10 100 VDS (V) *VGS u minimum VGS at which rDS(on) is specified 4/7 www.freescale.net.cn 1000 SUD50N025-09BP N-Channel 25-V (D-S) MOSFET TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Current De-Rating Power De-Rating 16 3.0 2.5 2.0 Power Drain Current (A) 12 8 1.5 1.0 4 0.5 0 0.0 0 25 50 75 100 125 150 175 TC – Case Temperature (_C) 50 75 100 125 150 TC – Case Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 25 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 70_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 5/7 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 www.freescale.net.cn 175 SUD50N025-09BP N-Channel 25-V (D-S) MOSFET TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 6/7 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.freescale.net.cn SUD50N025-09BP N-Channel 25-V (D-S) MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, “freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. 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