DINTEK DTU15P03

D561
www.daysemi.jp
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)d
0.0125 at VGS = - 10 V
- 14.9
0.0205 at VGS = - 4.5 V
- 11.6
VDS (V)
- 30
•
•
•
•
Qg (Typ.)
29.5 nC
Halogen-free
TrenchFET® Power MOSFET
100 % Rg Tested
100 % UIS Tested
RoHS
COMPLIANT
APPLICATIONS
• Load Switch
• Notebook Adaptor Switch
S
TO-252
G
G
D
S
Top View
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Limit
- 30
± 25
ID
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
- 2.2a, b
- 20
20
5.0
3.2
2.7a, b
1.7a, b
- 55 to 150
TJ, Tstg
Operating Junction and Storage Temperature Range
V
- 14.9
- 11.9
- 10.9a, b
- 8.6a, b
- 60
- 4.1
IDM
Pulsed Drain Current
Unit
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot
t ≤ 10 s
Steady State
Symbol
RthJA
RthJF
Typical
38
20
Maximum
46
25
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 85 °C/W.
d. Based on TC = 25 °C.
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D561
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
V
- 34
mV/
°C
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 2.5
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 25 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 30 V, VGS = 0 V
-1
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
-5
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
RDS(on)
Forward Transconductancea
gfs
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
VDS ≥ - 10 V, VGS = - 10 V
VGS = - 10 V, ID = - 10 A
tr
- 30
0.0125
VGS = - 4.5 V, ID = - 8 A
0.0165
0.0205
VDS = - 10 V, ID = - 10 A
28
2550
VDS = - 15 V, VGS = 0 V, f = 1 MHz
455
pF
390
VDS = - 15 V, VGS = - 10 V, ID = - 10 A
VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A
57
86
29.5
45
8
nC
22
f = 1 MHz
VDD = - 15 V, RL = 1.5 Ω
ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω
0.5
2.2
4.4
13
25
12
24
70
tf
9
18
td(on)
48
80
92
160
34
60
19
35
tr
Ω
S
40
td(off)
µA
A
0.010
td(on)
td(off)
5.3
- 1.4
VDD = - 15 V, RL = 1.5 Ω
ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω
tf
Ω
ns
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
- 4.1
- 60
IS = - 3 A, VGS = 0 V
IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C
A
- 0.75
- 1.2
V
27
45
ns
16
27
nC
12
15
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
D561
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
10
8
VGS = 10 thru 4 V
I D - Drain Current (A)
I D - Drain Current (A)
48
36
24
12
6
TC = 125 °C
4
TC = 25 °C
2
TC = - 55 °C
VGS = 3 V
VGS = 1 V, 2 V
0
0.0
0.5
1.0
1.5
2.0
0
2.5
0
1
VDS - Drain-to-Source Voltage (V)
2
3
4
5
20
25
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.030
4000
0.025
3200
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
Ciss
VGS = 4.5 V
0.020
0.015
VGS = 10 V
0.010
2400
1600
Coss
800
Crss
0.005
0
0
10
20
30
40
50
60
0
10
15
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
1.6
VDS = 10 V
ID = 10 A
8
1.4
VDS = 15 V
6
4
VDS = 20 V
2
0
0
12
24
36
Qg - Total Gate Charge (nC)
Gate Charge
VGS = - 4.5 V
ID = - 10 A
R DS(on) - On-Resistance
(Normalized)
V GS - Gate-to-Source Voltage (V)
5
48
60
VGS = - 10 V
1.2
1.0
0.8
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
3
D561
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.10
100
ID = 10 A
TJ = 150 °C
0.08
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
TJ = 25 °C
1
0.1
0.01
0.06
0.04
TJ = 125 °C
0.02
TJ = 25 °C
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
VSD - Source-to-Drain Voltage (V)
6
4
8
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.8
170
ID = 250 µA
136
0.4
Power (W)
V GS(th) Variance (V)
0.6
ID = 5 mA
0.2
102
68
0.0
34
- 0.2
- 0.4
- 50
0
- 25
0
25
50
75
100
125
150
0.001
0.01
TJ - Temperature (°C)
100
Limited by RDS(on)*
10
I D - Drain Current (A)
1
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
1 ms
10 ms
1
100 ms
1s
10 s
0.1
DC
TA = 25 °C
Single Pulse
0.01
0.01
0.1
BVDSS
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
4
0.1
Time (s)
100
10
D561
www.daysemi.jp
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
17.0
ID - Drain Current (A)
13.6
10.2
6.8
3.4
0.0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
6.0
2.0
4.8
1.6
Power (W)
Power (W)
Current Derating*
3.6
2.4
1.2
0.8
0.4
1.2
0.0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Foot
Power Derating, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
5
D561
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 85 °C/W
3. TJM -- TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10 -4
Single Pulse
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
6
1
10
Package Information
TO-252AA CASE OUTLINE
E
C2
L3
H
D
b2
C
A1
D1
e1
L
gage plane height (0.5 mm)
e
L5
L4
b
INCHES
MILLIMETERS
A
b3
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.18
2.38
0.086
0.094
A1
-
0.127
-
0.005
b
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
C
0.46
0.61
0.018
0.024
C2
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1
5.21
-
0.205
0.265
E
6.35
6.73
0.250
E1
4.32
-
0.170
-
H
9.40
10.41
0.370
0.410
e
2.28 BSC
0.090 BSC
e1
4.56 BSC
0.180 BSC
L
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4
-
1.02
-
0.040
L5
1.14
1.52
0.045
0.060
ECN: X12-0247-Rev. M, 24-Dec-12
DWG: 5347
E1
Note
• Dimension L3 is for reference only.
1
Application Note
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
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APPLICATION NOTE
1
Legal Disclaimer Notice
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“Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
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including but not limited to the warranty expressed therein.
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Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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