DTL19P10 www.din-tek.jp P-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) (Ω) ID (A) 0.120 at VGS = - 10 V - 19 0.160 at VGS = - 4.5V - 15.7 • Halogen-free Option Available • TrenchFET® Power MOSFET • UIS and Rg Tested Qg (Typ.) 16.5 nC RoHS COMPLIANT APPLICATIONS • Active Clamp in Intermediate DC/DC Power Supplies TO-251 S G D G D S Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. TJ, Tstg Limit - 100 ± 20 - 19.0 - 12.6 - 15 a, b - 10 a, b - 20 - 13.2 - 3.0a, b 15 11.25 52 33 3.7a, b 2.4 - 50 to 150 260 Unit V A mJ W °C 1 DTL19P10 www.din-tek.jp THERMAL RESISTANCE RATINGS Parameter t ≤ 10 s Steady State Maximum Junction-to-Ambienta, b Maximum Junction-to-Case (Drain) Symbol RthJA RthJC Typical 26 1.9 Maximum 33 2.4 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditins is 81 °C/W. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS VGS = 0 V, ID = - 250 µA - 100 ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) Forward Transconductancea Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg gfs Fall Time Turn-On Delay Time -1 - 10 a Pulse Diode Forward Current Body Diode Voltage - 10 0.120 VGS = - 4.5 V, ID = - 3 A 0.119 0.160 VDS = - 15 V, ID = 4 A 25 1480 VDS = - 50 V, VGS = 0 V, f = 1 MHz 80 pF 60 VDS = - 50 V, VGS = - 10 V, ID = - 4 A 35 55 16.5 25 8 45 110 165 51 80 tf 40 60 td(on) 11 18 VSD trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb nC 8 VDD = - 50 V, RL = 12.5 Ω ID ≅ - 4 A, VGEN = - 4.5 V, Rg = 1 Ω VDD = - 50 V, RL = 12.5 Ω ID ≅ - 4 A, VGEN = - 10 V, Rg = 1 Ω 13 20 42 65 10 15 TC = 25 °C - 19 ISM Body Diode Reverse Recovery Time Ω S 30 IS µA A 0.108 tf Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current V nA 5.3 td(off) Turn-Off DelayTime -3 ± 100 f = 1 MHz tr Rise Time -1 4.7 td(off) Turn-Off DelayTime mV/°C - 5.0 VDS = - 100 V, VGS = 0 V VDS ≥ - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 4 A Unit V - 100 VDS = - 50 V, VGS = - 4.5 V, ID = - 4 A tr Rise Time Max. VDS = - 100 V, VGS = 0 V, TJ = 55 °C td(on) Turn-On Delay Time Typ. - 20 IS = - 3 A IF = - 4 A, dI/dt = 100 A/µs, TJ = 25 °C Ω ns A - 0.8 - 1.2 V 46 70 ns 97 150 nC 36 10 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 DTL19P10 TYPICAL CHARACTERISTICS www.din-tek.jp 25 °C, unless otherwise noted 20 2.0 VGS = 10 thru 4 V 1.6 I D - Drain Current (A) I D - Drain Current (A) 16 12 8 4 1.2 0.8 TC = 125 °C 0.4 25 °C 3V - 55 °C 0 0.0 0 1 2 3 4 5 0 1 VDS - Drain-to-Source Voltage (V) 3 4 5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.18 2200 0.16 1760 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 2 0.14 VGS = 4.5 V 0.12 Ciss 1320 880 VGS = 10 V 0.10 440 Coss 0.08 0 0 4 8 12 16 20 Crss 0 40 20 ID - Drain Current (A) 80 100 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 2.2 ID = 4 A ID = 4 A 1.9 8 VDS = 25 V 6 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 60 VDS = 75 V VDS = 50 V 4 2 VGS = 10 V 1.6 VGS = 4.5 V 1.3 1.0 0.7 0 0 8 16 24 Qg - Total Gate Charge (nC) Gate Charge 32 40 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 3 DTL19P10 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 R DS(on) - Drain-to-Source On-Resistance (Ω) I S - Source Current (A) 100 TJ = 150 °C 25 °C 10 0.8 0.6 0.4 125 °C 0.2 25 °C 0.0 1 0.0 0.3 0.6 1.2 0.9 0 1.5 1 2 VSD - Source-to-Drain Voltage (V) 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.8 50 0.6 40 ID = 250 µA Power (W) VGS(th) (V) 0.4 ID = 5 mA 0.2 30 20 0.0 10 - 0.2 - 0.4 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 10 100 Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* 10 ID - Drain Current (A) 1 Time (s) Threshold Voltage 1 ms 1 10 ms 100 ms 0.1 TA = 25 °C Single Pulse 1s 10 s DC 0.01 0.1 1 * VGS 10 VDS - Drain-to-Source Voltage (V) minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient 4 0.1 100 1000 DTL19P10 TYPICAL CHARACTERISTICS www.din-tek.jp 25 °C, unless otherwise noted 15 I D - Drain Current (A) 12 9 6 3 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 65 2.0 52 1.6 39 1.2 Power Power (W) Current Derating* 26 0.8 13 0.4 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 DTL19P10 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 65 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 Normalized Thermal Transient Impedance, Junction-to-Case 6 1 Package Information www.din-tek.jp TOĆ251AA (DPAK) E A L2 b2 Dim A A1 b b1 b2 c c1 D E e L L1 L2 L3 D L3 L1 b1 L b MILLIMETERS c1 e c A1 INCHES Min Max Min Max 2.21 2.38 0.087 0.094 0.89 1.14 0.035 0.045 0.71 0.89 0.028 0.035 0.76 1.14 0.030 0.045 5.23 5.43 0.206 0.214 0.46 0.58 0.018 0.023 0.46 0.58 0.018 0.023 5.97 6.22 0.235 0.245 6.48 6.73 0.255 0.265 2.28 BSC 0.090 BSC 8.89 9.53 0.350 0.375 1.91 2.28 0.075 0.090 0.89 1.27 0.035 0.050 1.15 1.52 0.045 0.060 ECN: S-03946—Rev. E, 09-Jul-01 DWG: 5346 Note: Dimension L3 is for reference only. www.GD\VHPLMS 1 Package Information Disclaimer www.din-tek.jp ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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