DINTEK DTS6503_13

DTS6503
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 30
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RDS(on) (Ω)
ID (A)a
0.053 at VGS = - 10 V
- 5.1
0.066 at VGS = - 4.5 V
- 4.1
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
Qg (Typ.)
5.1 nC
APPLICATIONS
• Load Switch
TSOP-6
Top V iew
1
6
2
5
3
4
(4) S
(3) G
3 mm
(1, 2, 5, 6) D
2.85 mm
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Limit
- 30
± 20
- 5.1
- 4.1
ID
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
Maximum Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Continuous Source-Drain Diode Current
V
- 4.1b, c
- 3.3b, c
- 20
- 2.5
IDM
Pulsed Drain Current
Unit
IS
A
- 1.67b, c
3.0
2.0
PD
W
2.0b, c
1.3b, c
- 55 to 150
TJ, Tstg
°C
THERMAL RESISTANCE RATINGS
Parameter
b, d
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
t≤5s
Steady State
Symbol
RthJA
RthJF
Typical
55
34
Maximum
62.5
41
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 110 °C/W.
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DTS6503
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
ΔVDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = - 250 µA
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
tr
td(off)
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
V
nA
-1
- 10
VDS ≤ - 5 V, VGS = - 10 V
- 20
µA
A
VGS = - 10 V, ID = - 4.1 A
0.040
0.053
VGS = - 4.5 V, ID = - 1.0 A
0.052
0.066
VDS = - 15 V, ID = - 4.1 A
8
Ω
S
450
VDS = - 15 V, VGS = 0 V, f = 1 MHz
80
pF
63
VDS = - 15 V, VGS = - 4.5 V, ID = - 4.1 A
10
15
5.1
8
1.8
nC
2.5
Ω
f = 1 MHz
7
40
60
VDD = - 15 V, RL = 4.6 Ω
ID ≅ - 3.3 A, VGEN = - 4.5 V, Rg = 1 Ω
80
120
20
30
12
20
td(on)
5
10
td(off)
VDD = - 15 V, RL = 4.6 Ω
ID ≅ - 3.3 A, VGEN = - 10 V, Rg = 1 Ω
tf
Fall Time
- 3.0
± 100
tf
tr
Rise Time
Turn-Off Delay Time
- 1.0
VDS = - 30 V, VGS = 0 V
td(on)
Rise Time
mV/°C
4.5
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
VDS = - 15 V, VGS = - 10 V, ID = - 4.1 A
Turn-On Delay Time
V
- 31
13
20
20
30
10
15
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
a
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
- 2.5
- 20
IS = - 3.3 A
IF = - 3.3 A, di/dt = 100 A/µs, TJ = 25 °C
A
- 0.8
- 1.2
V
20
30
ns
20
30
nC
14
6
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
DTS6503
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
5
VGS = 10 thru 5 V
4
ID - Drain Current (A)
ID - Drain Current (A)
16
12
VGS = 4 V
8
4
TC = - 55 °C
3
TC = 25 °C
2
1
TC = 125 °C
VGS = 3 V
0
0.0
VGS = 2 V
0.5
1.5
1.0
2.0
2.5
0
3.0
0
1
VDS - Drain-to-Source Voltage (V)
3
4
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
800
0.20
0.16
600
VGS = 4.5 V
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
2
0.12
0.08
VGS = 10 V
Ciss
400
200
0.04
Coss
Crss
0.00
0
0
4
8
12
16
20
0
5
10
15
25
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
30
1.6
ID = 4.1 A
VGS = 10 V, ID = 4.1 V
8
1.4
VDS = 15 V
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
20
6
VDS = 24 V
4
2
1.2
VGS = 4.5 V, ID = 4.1 A
1.0
0.8
0
0
2
4
6
8
Qg - Total Gate Charge (nC)
Gate Charge
10
12
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
3
DTS6503
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.25
100
TJ = 150 °C
10
0.20
R DS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 4.1 A
TJ = 25 °C
0.15
TJ = 125 °C
0.10
0.05
TJ = 25 °C
0.00
1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
2
VSD - Source-to-Drain Voltage (V)
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.2
25
ID = 250 µA
20
Power (W)
V GS(th) (V)
2.0
1.8
1.6
15
10
1.4
1.2
- 50
5
- 25
0
25
50
75
100
125
0
0.001
150
0.01
TJ - Temperature (°C)
10
Single Pulse Power
100
Limited by RDS(on)*
ID - Drain Current (A)
1
Time (s)
Threshold Voltage
10
100 µs
1
1 ms
10 ms
100 ms
1s, 10 s
0.1
TA = 25 °C
Single Pulse
0.01
0.1
BVDSS
Limited
1
* VGS
10
DC
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area
4
0.1
100
1000
DTS6503
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
6
4
5
Power (W)
ID - Drain Current (A)
3
4
3
2
2
1
1
0
0
0
25
50
75
100
125
150
25
50
75
100
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power, Junction-to-Foot
125
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
5
DTS6503
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
0.05
PDM
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 90 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
6
1
10
DTS6503
www.din-tek.jp
TSOP: 5/6−LEAD
JEDEC Part Number: MO-193C
e1
e1
5
4
6
E1
1
2
5
4
E
E1
1
3
2
3
-B-
e
b
E
-B-
e
0.15 M C B A
5-LEAD TSOP
b
0.15 M C B A
6-LEAD TSOP
4x 1
-A-
D
0.17 Ref
c
R
R
A2 A
L2
Gauge Plane
Seating Plane
Seating Plane
0.08
C
L
A1
-C-
(L1)
4x 1
MILLIMETERS
Dim
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
L2
R
INCHES
Min
Nom
Max
Min
Nom
Max
0.91
-
1.10
0.036
-
0.043
0.01
-
0.10
0.0004
-
0.004
0.90
-
1.00
0.035
0.038
0.039
0.30
0.32
0.45
0.012
0.013
0.018
0.10
0.15
0.20
0.004
0.006
0.008
2.95
3.05
3.10
0.116
0.120
0.122
2.70
2.85
2.98
0.106
0.112
0.117
1.55
1.65
1.70
0.061
0.065
0.067
0.95 BSC
0.0374 BSC
1.80
1.90
2.00
0.071
0.075
0.079
0.32
-
0.50
0.012
-
0.020
0.60 Ref
0.024 Ref
0.25 BSC
0.010 BSC
0.10
-
-
0.004
-
-
0
4
8
0
4
8
7 Nom
1
ECN: C-06593-Rev. I, 18-Dec-06
DWG: 5540
7 Nom
1
DTS6503
www.din-tek.jp
RECOMMENDED MINIMUM PADS FOR TSOP-6
0.099
0.039
0.020
0.019
(1.001)
(0.508)
(0.493)
Recommended Minimum Pads
Dimensions in Inches/(mm)
APPLICATION NOTE
Return to Index
1
0.064
(1.626)
0.028
(0.699)
(3.023)
0.119
(2.510)
DTS6503
Disclaimer
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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Din-Tek disclaims (i) any and all
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consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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requirements that are often placed on Din-Tek products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Din-Tek’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
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Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
1