SUD10P06-280L P-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.170 at VGS = - 10 V - 10 0.280 at VGS = - 4.5 V -8 • TrenchFET® Power MOSFETs • 175 °C Rated Maximum Junction Temperature RoHS COMPLIANT S TO-252 G Drain Connected to Tab G D S Top View D P-Channel MOSFET Ordering Information: SUD10P06-280L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 100 °C Symbol Limit Unit VGS ± 20 V - 10 ID -7 IDM - 20 Continuous Source Current (Diode Conduction) IS - 10 Avalanche Current IAS - 10 Pulsed Drain Current Single Pulse Avalanche Energy L = 0.1 mH TC = 25 °C Maximum Power Dissipation TA = 25 °C EAS 5 mJ 37 PD W 2a TJ, Tstg Operating Junction and Storage Temperature Range A - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta Junction-to-Case Symbol FR4 Board Mount Free Air RthJA RthJC Typical Maximum 60 70 120 140 3.7 4.0 Notes: a. Surface Mounted on FR4 board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm. 1/7 www.freescale.net.cn Unit °C/W SUD10P06-280L P-Channel 60 V (D-S) 175 °C MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. - 2.0 - 3.0 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage VDS VDS = 0 V, ID = - 250 µA - 60 VGS(th) VDS = VGS, ID = - 250 µA - 1.0 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = - 60 V, VGS = 0 V -1 VDS = - 60 V, VGS = 0 V, TJ = 125 °C - 50 Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) VDS = - 60 V, VGS = 0 V, TJ = 175 °C VDS = - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 5 A Drain-Source On-State Resistanceb Transconductanceb RDS(on) 0.130 0.31 VGS = - 10 V, ID = - 5 A, TJ = 175 °C 0.375 VGS = - 4.5 V, ID = - 2 A 0.210 VDS = - 15 V, ID = - 5 A 6 Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 30 Total Gate Charge Qg 11.5 Qgs Turn-On Delay Timec td(on) Rise Timec Turn-Off Delay Timec Fall Timec tr td(off) Ω 0.280 S 635 VDS = - 25 V, VGS = 0 V, f = 1 MHz VDS = - 30 V, VGS = - 10 V, ID = - 10 A 100 pF 25 nC 3.5 2 VDD = - 30 V, RL = 3 Ω ID ≅ 10 A, VGEN = - 10 V, RG = 2.5 Ω tf Source-Drain Diode Ratings and Characteristics TC = 25 9 20 16 20 17 30 19 35 ns °Ca Pulsed Current ISM Forward Voltageb VSD IF = 10 A, VGS = 0 V trr IF = 10 A, dI/dt = 100 A/µs Reverse Recovery Time 0.170 VGS = - 10 V, ID = - 5 A, TJ = 125 °C Input Capacitance Qgd µA A gfs Gate-Source Charge nA - 150 - 10 Forward Dynamic Gate-Drain Charge V - 20 50 A - 1.3 V 80 ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2/7 www.freescale.net.cn SUD10P06-280L P-Channel 60 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 30 VGS = 10 thru 7 V 8 I D - Drain Current (A) I D - Drain Current (A) 24 6V 18 12 5V 6 4V 6 4 TC = 125 °C 2 25 °C - 55 °C 3V 0 0 0 2 4 6 8 0 10 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics TC = - 55 °C 12 25 °C R DS(on) - On-Resistance (Ω) 15 9 125 °C 6 0.9 0.6 VGS = 4.5 V 0.3 VGS = 10 V 3 0.0 0 0 4 8 12 16 0 20 2 4 6 8 10 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 20 VGS - Gate-to-Source Voltage (V) 1000 800 C - Capacitance (pF) 5 1.2 18 g fs - Transconductance (S) 1 Ciss 600 400 200 Coss VDS = 20 V ID = 10 A 16 12 8 4 Crss 0 0 0 3/7 10 20 30 40 50 60 0 4 8 12 16 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge 20 www.freescale.net.cn 24 SUD10P06-280L P-Channel 60 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 2.5 VGS = 10 V ID = 5 A I S - Source Current (A) RDS(on) - On-Resistance (Normalized) 2.0 1.5 1.0 TJ = 150 °C 10 TJ = 25 °C 0.5 0.0 - 50 - 25 0 25 50 75 100 125 150 1 0.3 175 0.6 0.9 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1.5 THERMAL RATINGS 12 30 10 µs 100 µs Limited by RDS(on)* 10 I D - Drain Current (A) I D - Drain Current (A) 9 6 3 1 ms 1 10 ms 100 ms DC, 1 s TC = 25 °C Single Pulse 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Drain Current vs. Case Temperature 175 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case 4/7 www.freescale.net.cn 3 SUD10P06-280L P-Channel 60 V (D-S) 175 °C MOSFET TO-252AA CASE OUTLINE E A MILLIMETERS C1 e b1 D1 e1 E1 L gage plane height (0.5 mm) L1 b L3 H D L2 b2 C A2 A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.21 2.38 0.087 0.094 A1 0.89 1.14 0.035 0.045 A2 0.030 0.127 0.001 0.005 b 0.71 0.88 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.44 0.206 0.214 C 0.46 0.58 0.018 0.023 C1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 D1 4.10 4.45 0.161 0.175 E 6.48 6.73 0.255 0.265 E1 4.49 5.50 0.177 0.217 e e1 2.28 BSC 4.57 BSC 0.090 BSC 0.180 BSC H 9.65 10.41 0.380 L 1.40 1.78 0.055 0.070 L1 0.64 1.02 0.025 0.040 L2 0.89 1.27 0.035 0.050 L3 1.15 1.52 0.040 0.060 ECN: T11-0110-Rev. L, 18-Apr-11 DWG: 5347 Note • Dimension L3 is for reference only. 5/7 www.freescale.net.cn 0.410 SUD10P06-280L P-Channel 60 V (D-S) 175 °C MOSFET RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index 6/7 Return to Index www.freescale.net.cn SUD10P06-280L P-Channel 60 V (D-S) 175 °C MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, “freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain type s of applications are based on freestyle’s knowledge of typical requirements that are often placed on freestyle products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsib ility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. All operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify freestyle’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, freestyle products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the freestyle product could result in personal injury or death. Customers using or selling freestyle products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold freestyle and its distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vis hay Material Category Policy freestyle Intertechnology, Inc. hereby certi fies that all its products that are id entified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwis e specified as non-compliant. Please note that some freestyle documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002 /95/EC conform to Directive 2011/65/EU. 7/7 www.freescale.net.cn