STT60GKxxB Thyristor-Thyristor Modules Type STT60GK08B STT60GK12B STT60GK14B STT60GK16B STT60GK18B Symbol VRSM VDSM V 900 1300 1500 1700 1900 Test Conditions ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine VRRM VDRM V 800 1200 1400 1600 1800 Tolerance:+0.5mm Dimensions in mm (1mm=0.0394") Maximum Ratings Unit 94 60 A ITSM, IFSM TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 1500 1600 1350 1450 A 2 TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 11200 10750 9100 8830 A2s repetitive, IT=150A 150 (di/dt)cr TVJ=TVJM f=50Hz, tp=200us VD=2/3VDRM IG=0.45A diG/dt=0.45A/us non repetitive, IT=ITAVM 500 (dv/dt)cr TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) i dt A/us 1000 V/us 10 5 W PGAV 0.5 W VRGM 10 V TVJ TVJM Tstg -40...+125 125 -40...+125 PGM VISOL Md TVJ=TVJM IT=ITAVM 50/60Hz, RMS _ IISOL<1mA tp=30us tp=300us t=1min t=1s Mounting torque (M5) Terminal connection torque (M5) Weight Typ. o C 3000 3600 V~ 2.5-4.0/22-35 2.5-4.0/22-35 Nm/lb.in. 110 g STT60GKxxB Thyristor-Thyristor Modules Symbol Test Conditions IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM VTM VTO o ITM=180A; TVJ=25 C o For power-loss calculations only (TVJ=125 C) IGT VGD Unit 5 mA 1.65 V 0.85 V 3.7 rT VGT Characteristic Values o m VD=6V; TVJ=25 C TVJ=-40oC 1.5 max 1.6 max VD=6V; TVJ=25oC TVJ=-40oC 100 200 mA TVJ=TVJM; VD=2/3VDRM 0.2 V 10 mA IGD V IL TVJ=25oC; tp=10us; VD=6V IG=0.45A; diG/dt=0.45A/us 450 mA IH TVJ=25oC; VD=6V; RGK= 200 mA 2 us 150 us 100 uC 24 A o tgd TVJ=25 C; VD=1/2VDRM IG=0.45A; diG/dt=0.45A/us tq TVJ=TVJM; IT=150A; tp=200us; -di/dt=10A/us VR=100V; dv/dt=20V/us; VD=2/3VDRM QS TVJ=TVJM; IT, IF=50A; -di/dt=3A/us typ. IRM RthJC per thyristor/diode; DC current per module 0.45 0.225 K/W RthJK per thyristor/diode; DC current per module 0.65 0.325 K/W dS Creeping distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s2 FEATURES * International standard package * Copper base plate * Glass passivated chips * Isolation voltage 3600 V~ * UL file NO.310749 * RoHs compliant APPLICATIONS * DC motor control * Softstart AC motor controller * Light, heat and temperature control ADVANTAGES * Space and weight savings * Simple mounting with two screws * Improved temperature and power cycling * Reduced protection circuits STT60GKxxB Thyristor-Thyristor Modules 100 W .1/2 .1/2 STT60B STD60B 120 100 rec. sin. 180 180 W 90 75 0.8 Ta 50 0.6 0.5 Rth(j-a) 1.4 75 1.7 cont. 60 1 1.2 2 30 rec. 15 50 50 2.5 3 25 25 0 ITAV 25 50 A W .1 .1 0 75 Fig.1L Power dissipation per thyristor vs. on-state current 200 5 6 8 PTAV PTAV 0 3.5 4 K/W 0 100 O C 150 Fig.1R Power dissipation per thyristor vs. ambient temp 200 STT60B STD60B W 150 150 0.3 0.2 0.1 65 Rth(c-a) Tc 0.4 75 0.5 0.6 85 0.7 100 100 0.8 95 1 1.2 105 1.5 50 50 2 O 3 Pvtot Pvtot 0 0 0 IRMS 50 100 A 150 Fig.2L Power dissipation per module vs. rms current 400 W 300 .2 .2 K/W Ta 0 50 100 O C 125 150 Fig.2R Power dissipation per module vs. case temp 400 W STT60B STD60B 0.15 0.1 0.05 65 Rth(c-a) Tc 0.2 300 R 75 0.25 85 0.3 L 0.4 200 200 95 0.5 0.6 0.7 0.8 100 100 Pvtot Pvtot 0 0 0 ID 25 50 75 100 Fig.3L Power dissipation of two modules vs. direct current C 115 4 125 A 150 105 1 1.2 2 115 1.5 O K/W 0 Ta 50 100 Fig.3R Power dissipation of two modules vs. case temp O C 150 C 125 STT60GKxxB Thyristor-Thyristor Modules 600 .3 .3 W 500 600 STT60B STD60B Tc 0.12 500 72 0.15 w3 400 61 Rth(c-a) 0.1 0.08 0.06 0.04 W 400 82 0.2 B6 0.25 300 300 200 200 100 100 Pvtot Pvtot 0 0 93 0.3 0.4 100 0 ID IRMS 50 150 A 200 Fig.4L Power dissipation of three modules vs. direct and rms current 1000 .1/2 .1/2 uC ITM= 100A STT60B STD60B 50A 20A 10A 0.5 0.6 0.8 104 1 114 1.5 C O K/W Ta 0 50 125 150 C 100 O Fig.4R Power dissipation of three modules vs. case temp 1/2 K/W .1/2 0.8 . STT60B Zth(j-s) STD60B Zth(j-c) 5A 100 0.4 o Zth Tvj=125 C 10 0 10 A/us 100 Fig.5 Recovered charge vs. current decrease 250 A 200 .1/2 .1/2 0.01 0.1 1 10 s 100 Fig.6 Transient thermal impedance vs. time typ. STT60B STD60B 0 0.001 t 2 IT(OV) ITSM max. 1/2 .1/2 . STT60B STD60B 1.6 ITSM(25 C) =1500A ITSM(125 C)=1250A O O 1.4 150 1.2 100 . . 1.V 0 VRRM 0.5 VRRM 1 RRM 0.8 50 Tvj=25 OC O － － Tvj=125 C _ IT 0.6 0 0 Vt 0.5 Fig.7 On-state charactristics 1 1.5 2 V2.5 0.4 1 t 10 Fig.8 Surge overload current vs. time 100 ms 1000