STT90GK08

STT90GKxxB
Thyristor-Thyristor Modules
Type
STT90GK08B
STT90GK12B
STT90GK14B
STT90GK16B
STT90GK18B
STT90GK20B
Symbol
VRSM
VDSM
V
900
1300
1500
1700
1900
2100
Test Conditions
ITRMS, IFRMS TVJ=TVJM
ITAVM, IFAVM TC=85oC; 180o sine
VRRM
VDRM
V
800
1200
1400
1600
1800
2000
Tolerance:+0.5mm
Dimensions in mm (1mm=0.0394")
Maximum Ratings
Unit
140
90
A
ITSM, IFSM
TVJ=45oC
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
1700
1800
1540
1640
A
2
TVJ=45oC
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
14450
13500
11850
11300
A2s
repetitive, IT=250A
150
(di/dt)cr
TVJ=TVJM
f=50Hz, tp=200us
VD=2/3VDRM
IG=0.45A
diG/dt=0.45A/us
non repetitive, IT=ITAVM
500
(dv/dt)cr
TVJ=TVJM;
VDR=2/3VDRM
RGK= ; method 1 (linear voltage rise)
i dt
A/us
1000
V/us
10
5
W
PGAV
0.5
W
VRGM
10
V
TVJ
TVJM
Tstg
-40...+125
125
-40...+125
PGM
VISOL
Md
TVJ=TVJM
IT=ITAVM
50/60Hz, RMS
_
IISOL<1mA
tp=30us
tp=300us
t=1min
t=1s
Mounting torque (M5)
Terminal connection torque (M5)
Weight Typ.
o
C
3000
3600
V~
2.5-4.0/22-35
2.5-4.0/22-35
Nm/lb.in.
110
g
STT90GKxxB
Thyristor-Thyristor Modules
Symbol
Test Conditions
IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM
VTM
VTO
ITM=270A; TVJ=25oC
o
For power-loss calculations only (TVJ=125 C)
IGT
VGD
Unit
5
mA
1.65
V
0.85
V
3.2
rT
VGT
Characteristic Values
o
m
VD=6V;
TVJ=25 C
TVJ=-40oC
2.5
2.6
V
VD=6V;
TVJ=25oC
TVJ=-40oC
150
200
mA
TVJ=TVJM;
VD=2/3VDRM
0.2
V
10
mA
IGD
o
IL
TVJ=25 C; tp=10us; VD=6V
IG=0.45A; diG/dt=0.45A/us
450
mA
IH
TVJ=25oC; VD=6V; RGK=
200
mA
2
us
185
us
170
uC
45
A
o
tgd
TVJ=25 C; VD=1/2VDRM
IG=0.45A; diG/dt=0.45A/us
tq
TVJ=TVJM; IT=150A; tp=200us; -di/dt=10A/us
VR=100V; dv/dt=20V/us; VD=2/3VDRM
QS
TVJ=TVJM; IT, IF=50A; -di/dt=6A/us
typ.
IRM
RthJC
per thyristor/diode; DC current
per module
0.3
0.15
K/W
RthJK
per thyristor/diode; DC current
per module
0.5
0.25
K/W
dS
Creeping distance on surface
12.7
mm
dA
Strike distance through air
9.6
mm
a
Maximum allowable acceleration
50
m/s2
FEATURES
* International standard package
* Copper base plate
* Glass passivated chips
* Isolation voltage 3600 V~
* UL file NO.310749
* RoHs compliant
APPLICATIONS
* DC motor control
* Softstart AC motor controller
* Light, heat and temperature
control
ADVANTAGES
* Space and weight savings
* Simple mounting with two screws
* Improved temperature and power
cycling
* Reduced protection circuits
STT90GKxxB
Thyriistor-Thyristor Modules
150
W
125
1/2
1/2
. STT90B
. STD90B
90
120
rec.
sin. 180
180
60
100
r ec.
15
75
cont.
30
150
W
0.8
125
1
0.7
0.5
0.6
0.4
0.3
Rth(j-a)
1.2
100
1.4
75
1. 6
1. 8
2
50
50
2.5
3
25
25
PTAV
PTAV
0
0
0 ITAV
25
50
A
75
Fig.1L Power dissipation per thyristor vs. on-state current
300
W
4
K/W
Ta
0
100
O
100
50
C
150
F ig.1R Power dissipation per thyristor vs. ambient temp
300
1 . STT90B
1 . STD90B
0.2 0.15 0.1
0.25
W
0.05
70
Rth(c-a)
Tc
0.3
81
0.35
0.4
200
200
92
0.5
0.6
0.7
0.8
100
103
1
100
1.5
114
2
Pvtot
Pvtot
0
0
0 IRMS
50
150
100
A 200
Fig.2L Power dissipation per module vs. rms current
600
W
500
Ta
0
O
100
50
C
C
125
150
Fig .2R Power dissipation per module vs. case temp
600
2 . STT90B
2 . STD90B
W
500
0.1 0.08. 0.06 0.04
0.12
70
Rth(c-a)
Tc
0.14
81
0.16
R
400
O
K/W
400
L
0.2
92
0.25
300
300
0.3
0.35
103
0.4
200
200
100
100
Pvtot
Pvtot
0
0
0 ID
150
100
50
Fig.3L Power dissipation of two modules vs. direct current
A 200
0.5
0.6
0.8
114
K/W
O
0
Ta
50
100
O
C
Fig.3R Power dissipation of two modules vs. case temp
C
125
150
STT90GKxxB
Thyristor-Thyristor Modules
750
750
3 . STT90B
3 . STD90B
W
0.1
W
0.08 0.06 0.04 0.02
76
Tc
Rth(c-a)
0.12
86
0.14
w3
500
0.17
500
B6
0.2
96
0.25
0.3
106
0.35
250
250
0.4
0.5
0.6
Pvtot
0
Pvtot
0 ID IRMS 50
100
A 250
200
150
Fig.4L Power dissipation of three modules vs. direct and rms current
1000
1/2
1/2
uC
0
115
K/W
0
C
O
Ta
500A
200A
100A
125
150
C
O
100
Fig.4R Power dissipation of three modules vs. case temp
0.6
. STT90B
. STD90B
50
1/2
1/2
K/W
0.5
. STT90B
. STD90B
Zth(j-s)
50A
20A
0.4
ITM=
Zth(j-c)
0.3
100
0.2
0.1
Qrr
10
o
Tvj=125 C
-diT /dt
1
10
A/us 100
Fig.5 Recovered charge vs. current decrease
400
A
1/2
1/2
Zth
0
0.001 t 0.01
2
. STT90B
typ.
. STD90B
0.1
10
1
s 100
Fig.6 Transient thermal impedance vs. time
max.
1/2
1/2
IT(OV)
ITSM
. STT 90B
. STD 90B
1.6
300
ITSM(25 C) =1600A
ITSM(125 C)=1450A
O
O
1.4
200
.
.
1.V
1.2
0 VRRM
0.5 VRRM
1
100
RRM
0.8
Tvj=25 C
O
－　－ Tvj=125 C
O
_
IT
0
0
Vt 0.5
Fig.7 On-state charactristics
1
1.5
2
V 2.5
0.6
0.4
1
t
10
Fig.8 Surge overload current vs. time
100
ms 1000