STT165GK08

STT165GKxxB
Thyristor-Thyristor Modules
Type
STT165GK08B
STT165GK12B
STT165GK14B
STT165GK16B
STT165GK18B
STT165GK20B
STT165GK22B
Symbol
VRSM
VDSM
V
900
1300
1500
1700
1900
2100
2300
Test Conditions
ITRMS, IFRMS TVJ=TVJM
ITAVM, IFAVM TC=85oC; 180o sine
VRRM
VDRM
V
800
1200
1400
1600
1800
2000
2200
Colerance:+0.5mm
Dimensions in mm (1mm=0.0394")
Maximum Ratings
Unit
259
165
A
ITSM, IFSM
TVJ=45oC
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
6000
6400
5250
5600
A
2
TVJ=45oC
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
180000
170000
137000
128000
A2s
repetitive, IT=500A
150
(di/dt)cr
TVJ=TVJM
f=50Hz, tp=200us
VD=2/3VDRM
IG=0.5A
diG/dt=0.5A/us
non repetitive, IT=ITAVM
500
(dv/dt)cr
TVJ=TVJM;
VDR=2/3VDRM
RGK= ; method 1 (linear voltage rise)
1000
V/us
TVJ=TVJM
IT=ITAVM
120
60
W
PGAV
8
W
VRGM
10
V
TVJ
TVJM
Tstg
-40...+125
125
-40...+125
i dt
PGM
VISOL
Md
50/60Hz, RMS
_
IISOL<1mA
tp=30us
tp=500us
t=1min
t=1s
Mounting torque (M6)
Terminal connection torque (M6)
Weight Typ.
A/us
o
C
3000
3600
V~
2.25-2.75/20-25
4.5-5.5/40-48
Nm/lb.in.
180
g
STT165GKxxB
Thyristor-Thyristor Modules
Symbol
Test Conditions
Characteristic Values
Unit
40
mA
ITM=495A; TVJ=25 C
1.75
V
For power-loss calculations only (TVJ=TVJM)
0.8
V
IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM
VTM
VTO
o
1.6
rT
o
m
VD=6V;
TVJ=25 C
TVJ=-40oC
2.0 max
2.6 max
VD=6V;
TVJ=25oC
TVJ=-40oC
150
200
mA
VGD
TVJ=TVJM;
VD=2/3VDRM
0.25
V
IGD
TVJ=TVJM;
VD=2/3VDRM
10
mA
VGT
IGT
o
V
IL
TVJ=25 C; tp=30us; VD=6V
IG=0.45A; diG/dt=0.45A/us
200
mA
IH
TVJ=25oC; VD=6V; RGK=
150
mA
tgd
TVJ=25oC; VD=1/2VDRM
IG=0.5A; diG/dt=0.5A/us
2
us
tq
TVJ=TVJM; IT=160A; tp=200us; -di/dt=10A/us
VR=100V; dv/dt=20V/us; VD=2/3VDRM
150
us
QS
TVJ=TVJM; IT, IF=300A; -di/dt=50A/us
550
uC
235
A
typ.
IRM
RthJC
per thyristor/diode; DC current
per module
0.155
0.0775
K/W
RthJK
per thyristor/diode; DC current
per module
0.225
0.1125
K/W
dS
Creeping distance on surface
12.7
mm
dA
Creepage distance in air
9.6
mm
a
Maximum allowable acceleration
50
m/s2
FEATURES
* International standard package
* Copper base plate
* Glass passivated chips
* Isolation voltage 3600 V~
* UL file NO.310749
* RoHs compliant
APPLICATIONS
* Motor control
* Power converter
* Heat and temperature control for
industrial furnaces and chemical
processes
* Lighting control
* Contactless switches
ADVANTAGES
* Space and weight savings
* Simple mounting
* Improved temperature and power
cycling
* Reduced protection circuits
STT165GKxxB
Thyristor-Thyristor Modules
300
300
.
.
1/2 STT165B
1/2 STD165B
W
sin.
180
90
200
0.4
W
0.25
0.35 0.3
0.2
Rth(j-a)
0.45
0.5
120
200
60
rec.
15
rec.
180
0.6
cont.
0.7
30
0.8
1
100
100
1.2
1.6
PTAV
PTAV
0
2
2.5
0 ITAV
50
100
A 200
150
Fig.1L Power dissipation per thyristor vs. on-state current
500
0
Ta
0
50
100
O
C
150
Fig.1R Power dissipation per thyristor vs. ambient temp
500
.
.
W
K/W
0.14 0.12 0.1 0.07 0.04 0.02
-
W
1 STT165B
1 STD165B
0.17
Tc
0.2
400
400
80
Rth(c a)
89
0.25
300
300
0.3
200
200
0.5
100
100
98
0.4
107
0.6
0.8
Pvtot
0
1
Pvtot
0 IRMS
100
200
300
A 400
0
Ta
0
1200
1200
2 . STT165B
2 . STD165B
1000
C
O
50
C
100
O
Fig.2R Power dissipation per module vs. case temp
Fig.2L Power dissipation per module vs. rms current
W
116
K/W
W
1000
71
Rth(c-a)
Tc
0.07
80
0.08
R
800
L
800
0.05 0.04 0.03 0.02
0.06
125
150
0.1
89
0.12
600
600
400
400
200
Pvtot
200
98
0.16
0.2
0
Pvtot
0
ID
100
200
300
Fig.3L Power dissipation of two modules vs. direct current
A 400
0
107
0.25
0.3
0.4
116
0.5
O
K/W
0
Ta
50
100
Fig.3 R Power dissipation of two modules vs. case temp
O
C
C
125
150
STT165GKxxB
Thyristor-Thyristor Modules
1500
1500
3 . STT 165 B
3 . STD165B
W
Tc
0.06
85
0.07
w3
1000
75
0.05 0.04 0.03 0.02 Rth(c-a)
W
0.08
1000
0.1
B6
95
0.12
0.16
500
Pvtot
0.25
0.3
0 ID IRMS100
200
400 A 500
300
F ig.4L Power dissipation of three modules vs. direct and rms current
10000
1/2
1/2
uC
115
K/W
Pvtot
0
105
0.2
500
0
0
C
O
Ta
K/W
0.25
ITM=
125
150
C
100
O
Fig.4R Power dissipation of three modules vs. case temp
0.3
. STT165 B
. STD165B
50
1/2
1/2
. STT 165 B
. STD165 B
Zth(j-s)
0.2
500 A
200 A
1000
100A
50 A
20 A
0.1
Qrr
0.05
o
Tvj= 125 C
100
-di T/dt
1
10
Zth
A/us 100
Fig.5 Recovered charge vs. current decrease
600
A
500
1/2
1/2
Zth(j-c)
0.15
0
0.001 t
2
. STT 165B
1/2
1/2
IT(OV)
ITSM
typ.
. STD165B
0.1
0.01
10
1
s 100
Fig.6 Transient thermal impedance vs. time
max.
400
. STT165B
. STD165B
1.6
ITSM(25 C) =5400A
ITSM(125 C)=5000A
O
O
1.4
300
.
.
1.V
1.2
0 VRRM
0.5 VRRM
1
200
RRM
0.8
100
IT
0
Tvj=25 OC
O
－　－ Tvj=125 C
_
0
Vt
0.5
Fig.7 On-state charactristics
1
1.5
V 2
0.6
0.4
1
t
10
Fig.8 Surge overload current vs. time
100
ms 1000