STD/SDT18 Thyristor-Diode Modules, Diode-Thyristor Modules Dimensions in mm (1mm=0.0394") Type STD/SDT18GK08 STD/SDT18GK12 STD/SDT18GK14 STD/SDT18GK16 STD/SDT18GK18 Symbol VRSM VDSM V 900 1300 1500 1700 1900 Test Conditions ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine VRRM VDRM V 800 1200 1400 1600 1800 Maximum Ratings Unit 40 18 A ITSM, IFSM TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 400 420 350 370 A 2 TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 800 730 600 570 A2s TVJ=TVJM f=50Hz, tp=200us VD=2/3VDRM IG=0.45A diG/dt=0.45A/us repetitive, IT=45A 150 non repetitive, IT=ITAVM 500 i dt (di/dt)cr A/us TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) 1000 V/us 10 5 W PGAV 0.5 W VRGM 10 V TVJ TVJM Tstg -40...+125 125 -40...+125 (dv/dt)cr PGM VISOL Md Weight TVJ=TVJM IT=ITAVM 50/60Hz, RMS _ IISOL<1mA tp=30us tp=300us t=1min t=1s Mounting torque (M5) Terminal connection torque (M5) Typical including screws o C 3000 3600 V~ 2.5-4.0/22-35 2.5-4.0/22-35 Nm/lb.in. 90 g STD/SDT18 Thyristor-Diode Modules, Diode-Thyristor Modules Symbol Test Conditions Characteristic Values Unit 3 mA IT, IF=80A; TVJ=25 C 2.05 V For power-loss calculations only (TVJ=125oC) 0.85 V IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM VT, VF VTO o 18 rT VGT IGT VGD o m VD=6V; TVJ=25 C TVJ=-40oC 1.5 1.6 V VD=6V; TVJ=25oC TVJ=-40oC 100 200 mA TVJ=TVJM; VD=2/3VDRM 0.2 V 10 mA IGD o IL TVJ=25 C; tp=10us; VD=6V IG=0.45A; diG/dt=0.45A/us 450 mA IH TVJ=25oC; VD=6V; RGK= 200 mA 2 us 150 us 50 uC 6 A o tgd TVJ=25 C; VD=1/2VDRM IG=0.45A; diG/dt=0.45A/us tq TVJ=TVJM; IT=20A; tp=200us; -di/dt=10A/us VR=100V; dv/dt=20V/us; VD=2/3VDRM QS TVJ=TVJM; IT, IF=25A; -di/dt=0.64A/us typ. IRM RthJC per thyristor/diode; DC current per module 1.3 0.65 K/W RthJK per thyristor/diode; DC current per module 1.5 0.75 K/W dS Creeping distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s2 FEATURES APPLICATIONS ADVANTAGES * International standard package * Copper base plate * Planar passivated chips * Isolation voltage 3600 V~ * DC motor control * Softstart AC motor controller * Light, heat and temperature control * Space and weight savings * Simple mounting with two screws * Improved temperature and power cycling * Reduced protection circuits STD/SDT18 Thyristor-Diode Modules, Diode-Thyristor Modules Fig. 1 Surge overload current ITSM: Crest value, t: duration Fig. 2 i2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature 10 1: IGT, TVJ = 125 C V 2: IGT, TVJ = 25 C 3: IGT, TVJ = -40 C VG 3 2 1 5 6 1 4 4: PGAV = 0.5 W 5: PGM = IGD, TVJ = 125 C 0.1 100 Fig. 3 Power dissipation versus on-state current and ambient temperature (per thyristor) 101 5W 6: PGM = 10 W 102 103 IG mA 104 Fig. 4 Gate trigger characteristics 1000 TVJ = 25 C s tgd typ. 100 Limit 10 3 x STD/SDT18 1 10 mA 100 IG Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Fig. 6 Gate trigger delay time 1000 STD/SDT18 Thyristor-Diode Modules, Diode-Thyristor Modules Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 3 x STD/SDT18 STD/SDT18 Fig. 8 Transient thermal impedance junction to case (per thyristor) RthJC for various conduction angles d: d DC o 180 C o 120 C o 60 C o 30 C RthJC (K/W) 1.3 1.35 1.39 1.42 1.45 Constants for ZthJC calculation: i 1 2 3 STD/SDT18 Rthi (K/W) ti (s) 0.018 0.041 1.241 0.0033 0.0216 0.191 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor) RthJK for various conduction angles d: d DC o 180 C o 120 C o 60 C o 30 C RthJK (K/W) 1.5 1.55 1.59 1.62 1.65 Constants for ZthJK calculation: i 1 2 3 4 Rthi (K/W) ti (s) 0.018 0.041 1.241 0.2 0.0033 0.0216 0.191 0.46