STMICROELECTRONICS CD00251512

STD7N52DK3
STF7N52DK3, STP7N52DK3
N-channel 525 V, 0.95 Ω, 6 A, DPAK, TO-220FP, TO-220
SuperFREDmesh3™ Power MOSFET
Features
Order codes
VDSS
RDS(on)
max.
ID
Pw
3
1
STD7N52DK3
STF7N52DK3
STP7N52DK3
525 V
< 1.15 Ω
6A
6 A (1)
6A
90 W
25 W
90 W
DPAK
1. Limited by package
■
100% avalanche tested
■
Extremely high dv/dt capability
■
Gate charge minimized
■
Very low intrinsic capacitance
■
Improved diode reverse recovery
characteristics
■
Zener-protected
3
3
1
1
2
TO-220FP
TO-220
Figure 1.
2
Internal schematic diagram
D(2)
Application
Switching applications
G(1)
Description
These devices are N-channel
SuperFREDmesh3™, a new Power MOSFET
technology that is obtained via improvements
applied to STMicroelectronics’ SuperMESH3™
technology. The resulting product has an
extremely low on resistance, superior dynamic
performance, high avalanche capability and a fast
body-drain recovery diode, making it especially
suitable for the most demanding applications.
Table 1.
S(3)
AM01476v1
Device summary
Order codes
Marking
Package
Packaging
STD7N52DK3
7N52DK3
DPAK
Tape and reel
STF7N52DK3
7N52DK3
TO-220FP
Tube
STP7N52DK3
7N52DK3
TO-220
Tube
October 2010
Doc ID 16387 Rev 2
1/16
www.st.com
16
Contents
STD7N52DK3, STF7N52DK3, STP7N52DK3
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
.............................................. 9
Doc ID 16387 Rev 2
STD7N52DK3, STF7N52DK3, STP7N52DK3
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220
DPAK
TO-220FP
VDS
Drain-source voltage (VGS = 0)
525
V
VGS
Gate- source voltage
± 30
V
ID
ID
IDM
(2)
PTOT
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
6
6 (1)
A
4
(1)
A
Drain current (pulsed)
24
Total dissipation at TC = 25 °C
90
4
24
(1)
25
A
W
IAR
Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max)
3
A
EAS
Single pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 50 V)
100
mJ
VESD(G-S)
Gate source ESD(HBM-C = 100 pF,
R = 1.5 kΩ)
2500
V
dv/dt (3)
Peak diode recovery voltage slope
20
V/ns
di/dt
Diode reverse recovery current slope
400
A/µs
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s; TC = 25 °C)
Tstg
Storage temperature
Tj
2500
Max. operating junction temperature
V
-55 to 150
°C
150
°C
1. Limited by package
2. Pulse width limited by safe operating area
3. ISD ≤ 6 A, peak VDS < V(BR)DSS.
Table 3.
Thermal data
Value
Symbol
Parameter
Unit
TO-220
Rthj-case
Thermal resistance junction-case max
DPAK
1.39
Rthj-pcb (1) Thermal resistance junction-pcb max
TO-220FP
5
50
°C/W
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
300
°C
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Doc ID 16387 Rev 2
3/16
Electrical characteristics
2
STD7N52DK3, STF7N52DK3, STP7N52DK3
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4.
Symbol
V(BR)DSS
On /off states
Parameter
Test conditions
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
Zero gate voltage
VDS = Max rating
drain current (VGS = 0) VDS = Max rating, TC=125 °C
IGSS
Gate-body leakage
current (VDS = 0)
Gate threshold voltage VDS = VGS, ID = 50 µA
RDS(on)
Static drain-source on
resistance
Symbol
Ciss
Coss
Crss
Co(tr)(1)
Co(er)
(2)
Typ.
Max.
Unit
525
V
1
50
µA
µA
± 10
µA
3.75
4.5
V
0.95
1.15
Ω
Min.
Typ.
Max.
Unit
-
870
70
13
-
pF
pF
pF
-
53
-
pF
-
74
-
pF
-
3.5
-
Ω
-
33
5
19
-
nC
nC
nC
VGS = ± 20 V
VGS(th)
Table 5.
Min.
3
VGS = 10 V, ID = 3 A
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Test conditions
VDS = 50 V, f = 1 MHz,
VGS = 0
Equivalent
capacitance time
related
Equivalent
capacitance energy
related
VDS = 0 to 525 V, VGS = 0
RG
Intrinsic gate
resistance
f = 1 MHz open drain
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 420 V, ID = 6 A,
VGS = 10 V
(see Figure 20)
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS
4/16
Doc ID 16387 Rev 2
STD7N52DK3, STF7N52DK3, STP7N52DK3
Table 6.
Symbol
td(on)
tr
td(off)
tf
Table 7.
Switching times
Parameter
Test conditions
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 260 V, ID = 3 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19)
Parameter
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
IRRM
trr
Qrr
IRRM
Min.
Typ.
-
12
12
37
19
Min.
Typ.
Max
Unit
-
ns
ns
ns
ns
Source drain diode
Symbol
trr
Qrr
Electrical characteristics
Test conditions
Max. Unit
-
6
24
A
A
ISD = 6 A, VGS = 0
-
1.5
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 6 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 24)
-
110
440
8
ns
nC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 6 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 24)
-
140
680
10
ns
nC
A
Min.
Typ.
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 8.
Symbol
BVGSO
Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown
voltage
Igs=± 1 mA (open drain)
30
Max. Unit
-
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Doc ID 16387 Rev 2
5/16
Electrical characteristics
STD7N52DK3, STF7N52DK3, STP7N52DK3
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for DPAK
Figure 3.
Thermal impedance for DPAK
Figure 5.
Thermal impedance for TO-220FP
Figure 7.
Thermal impedance for TO-220
AM07185v1
ID
(A)
10µs
(o
n)
100µs
DS
Op
Lim era
ite tion
d
by in th
m is
ax ar
R e
a
is
10
1
1ms
10ms
Tj=150°C
Tc=25°C
Single pulse
0.1
0.1
10
1
Figure 4.
100
VDS(V)
Safe operating area for TO-220FP
AM07186v1
ID
(A)
on
)
10µs
S(
pe
ra
ite tion
d
by in t
m his
ax a
RD rea
is
10
1ms
Li
O
100µs
m
1
10ms
0.1
Tj=150°C
Tc=25°C
Single pulse
0.01
0.1
Figure 6.
10
1
100
Safe operating area for TO-220
AM07187v1
ID
(A)
10
S(
on
)
Lim era
ite tion
d
by in th
m is
ax ar
RD ea
is
10µs
100µs
1ms
Op
1
VDS(V)
10ms
Tj=150°C
Tc=25°C
Single pulse
0.1
0.1
6/16
1
10
100
VDS(V)
Doc ID 16387 Rev 2
STD7N52DK3, STF7N52DK3, STP7N52DK3
Figure 8.
Electrical characteristics
Output characteristics
Figure 9.
Transfer characteristics
AM07188v1
ID
(A)
AM07189v1
ID (A)
VDS=20V
14
14
VGS=10V
7V
12
12
10
10
8
8
6
6
6V
4
4
2
2
5V
0
0
5
10
15
20
0
0
25 VDS(V)
1
2
3
4
5
6
7
8
9
VGS(V)
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
AM07190v1
VGS
(V)
12
VGS
VDD=420V
ID=6A
VDS
450
400
350
10
300
AM07191v1
RDS(on) (Ω)
1.06
VGS=10V
1.04
1.02
1.00
8
250
6
200
0.98
150
4
100
0.96
0.94
0.92
2
50
0.90
0
0
Qg(nC)
0.88
0
10
20
30
Figure 12. Capacitance variations
0
1
2
3
4
5
6
Figure 13. Output capacitance stored energy
AM07192v1
C
(pF)
ID(A)
AM07193v1
Eoss (µJ)
4.0
1000
Ciss
3.5
3.0
2.5
100
2.0
Coss
10
Crss
1.5
1.0
0.5
1
0.1
1
10
100
VDS(V)
Doc ID 16387 Rev 2
0
0
100
200
300
400
500
VDS(V)
7/16
Electrical characteristics
STD7N52DK3, STF7N52DK3, STP7N52DK3
Figure 14. Normalized gate threshold voltage
vs temperature
AM07194v1
VGS(th)
(norm)
Figure 15. Normalized on resistance vs
temperature
AM07195v1
RDS(on)
(norm)
1.10
2.5
1.00
2.0
1.5
0.90
1.0
0.80
0.5
0.70
-75
25
-25
75
125
TJ(°C)
Figure 16. Source-drain diode forward
characteristics
1.0
-25
25
75
125
TJ(°C)
Figure 17. Normalized BVDSS vs temperature
AM07198v1
VSD
(V)
0.0
-75
TJ=-50°C
AM07196v1
BVDSS
(norm)
1.10
0.9
1.05
0.8
TJ=25°C
0.7
TJ=150°C
1.00
0.6
0.95
0.5
0.4
0
10
30
20
40
50 ISD(A)
0.90
-75
Figure 18. Maximum avalanche energy vs
starting Tj
AM07197v1
EAS
(mJ)
ID=3 A
VDD=50 V
110
100
90
80
70
60
50
40
30
20
10
0
0
8/16
20
40
60
80
100 120 140 TJ(°C)
Doc ID 16387 Rev 2
-25
25
75
125
TJ(°C)
STD7N52DK3, STF7N52DK3, STP7N52DK3
3
Test circuits
Test circuits
Figure 19. Switching times test circuit for
resistive load
Figure 20. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 21. Test circuit for inductive load
Figure 22. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 23. Unclamped inductive waveform
AM01471v1
Figure 24. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
0
Doc ID 16387 Rev 2
10%
AM01473v1
9/16
Package mechanical data
4
STD7N52DK3, STF7N52DK3, STP7N52DK3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
10/16
Doc ID 16387 Rev 2
STD7N52DK3, STF7N52DK3, STP7N52DK3
Table 9.
Package mechanical data
TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
Figure 25. TO-220FP drawing
L7
E
A
B
D
Dia
L5
L6
F1
F2
F
G
H
G1
L4
L2
L3
7012510_Rev_K
Doc ID 16387 Rev 2
11/16
Package mechanical data
STD7N52DK3, STF7N52DK3, STP7N52DK3
TO-220 type A mechanical data
mm
Dim
Min
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
Typ
4.40
0.61
1.14
0.48
15.25
Max
4.60
0.88
1.70
0.70
15.75
1.27
10
2.40
4.95
1.23
6.20
2.40
13
3.50
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
16.40
28.90
3.75
2.65
3.85
2.95
0015988_Rev_S
12/16
Doc ID 16387 Rev 2
STD7N52DK3, STF7N52DK3, STP7N52DK3
Package mechanical data
TO-252 (DPAK) mechanical data
DIM.
mm.
min.
typ
max.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
D1
E
5.10
6.40
6.60
E1
4.70
e
2.28
e1
4.40
4.60
H
9.35
10.10
L
1
L1
2.80
L2
L4
0.80
0.60
1
R
V2
0.20
8o
0o
0068772_G
Doc ID 16387 Rev 2
13/16
Package mechanical data
5
STD7N52DK3, STF7N52DK3, STP7N52DK3
Package mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
16.4
N
50
T
TAPE MECHANICAL DATA
DIM.
mm
MIN.
MAX.
A0
6.8
7
0.267 0.275
B0
10.4
10.6
0.409 0.417
B1
D
14/16
inch
1.5
D1
1.5
E
1.65
MIN.
MAX.
12.1
0.476
1.6
0.059 0.063
1.85
0.065 0.073
0.059
F
7.4
7.6
0.291 0.299
K0
2.55
2.75
0.100 0.108
0.153 0.161
P0
3.9
4.1
P1
7.9
8.1
0.311 0.319
P2
1.9
2.1
0.075 0.082
R
40
W
15.7
1.574
16.3
0.618
0.641
Doc ID 16387 Rev 2
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
0.059
0.795
18.4
0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
2500
STD7N52DK3, STF7N52DK3, STP7N52DK3
6
Revision history
Revision history
Table 10.
Document revision history
Date
Revision
Changes
09-Oct-2009
1
First release
20-Oct-2010
2
Document status promoted from preliminary data to datasheet
Doc ID 16387 Rev 2
15/16
STD7N52DK3, STF7N52DK3, STP7N52DK3
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16/16
Doc ID 16387 Rev 2