STD7N52DK3 STF7N52DK3, STP7N52DK3 N-channel 525 V, 0.95 Ω, 6 A, DPAK, TO-220FP, TO-220 SuperFREDmesh3™ Power MOSFET Features Order codes VDSS RDS(on) max. ID Pw 3 1 STD7N52DK3 STF7N52DK3 STP7N52DK3 525 V < 1.15 Ω 6A 6 A (1) 6A 90 W 25 W 90 W DPAK 1. Limited by package ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected 3 3 1 1 2 TO-220FP TO-220 Figure 1. 2 Internal schematic diagram D(2) Application Switching applications G(1) Description These devices are N-channel SuperFREDmesh3™, a new Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH3™ technology. The resulting product has an extremely low on resistance, superior dynamic performance, high avalanche capability and a fast body-drain recovery diode, making it especially suitable for the most demanding applications. Table 1. S(3) AM01476v1 Device summary Order codes Marking Package Packaging STD7N52DK3 7N52DK3 DPAK Tape and reel STF7N52DK3 7N52DK3 TO-220FP Tube STP7N52DK3 7N52DK3 TO-220 Tube October 2010 Doc ID 16387 Rev 2 1/16 www.st.com 16 Contents STD7N52DK3, STF7N52DK3, STP7N52DK3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 .............................................. 9 Doc ID 16387 Rev 2 STD7N52DK3, STF7N52DK3, STP7N52DK3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220 DPAK TO-220FP VDS Drain-source voltage (VGS = 0) 525 V VGS Gate- source voltage ± 30 V ID ID IDM (2) PTOT Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C 6 6 (1) A 4 (1) A Drain current (pulsed) 24 Total dissipation at TC = 25 °C 90 4 24 (1) 25 A W IAR Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) 3 A EAS Single pulse avalanche energy (starting Tj = 25°C, ID = IAR, VDD = 50 V) 100 mJ VESD(G-S) Gate source ESD(HBM-C = 100 pF, R = 1.5 kΩ) 2500 V dv/dt (3) Peak diode recovery voltage slope 20 V/ns di/dt Diode reverse recovery current slope 400 A/µs VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature Tj 2500 Max. operating junction temperature V -55 to 150 °C 150 °C 1. Limited by package 2. Pulse width limited by safe operating area 3. ISD ≤ 6 A, peak VDS < V(BR)DSS. Table 3. Thermal data Value Symbol Parameter Unit TO-220 Rthj-case Thermal resistance junction-case max DPAK 1.39 Rthj-pcb (1) Thermal resistance junction-pcb max TO-220FP 5 50 °C/W °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 300 °C 1. When mounted on 1inch² FR-4 board, 2 oz Cu Doc ID 16387 Rev 2 3/16 Electrical characteristics 2 STD7N52DK3, STF7N52DK3, STP7N52DK3 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 IDSS Zero gate voltage VDS = Max rating drain current (VGS = 0) VDS = Max rating, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Gate threshold voltage VDS = VGS, ID = 50 µA RDS(on) Static drain-source on resistance Symbol Ciss Coss Crss Co(tr)(1) Co(er) (2) Typ. Max. Unit 525 V 1 50 µA µA ± 10 µA 3.75 4.5 V 0.95 1.15 Ω Min. Typ. Max. Unit - 870 70 13 - pF pF pF - 53 - pF - 74 - pF - 3.5 - Ω - 33 5 19 - nC nC nC VGS = ± 20 V VGS(th) Table 5. Min. 3 VGS = 10 V, ID = 3 A Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Test conditions VDS = 50 V, f = 1 MHz, VGS = 0 Equivalent capacitance time related Equivalent capacitance energy related VDS = 0 to 525 V, VGS = 0 RG Intrinsic gate resistance f = 1 MHz open drain Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 420 V, ID = 6 A, VGS = 10 V (see Figure 20) 1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/16 Doc ID 16387 Rev 2 STD7N52DK3, STF7N52DK3, STP7N52DK3 Table 6. Symbol td(on) tr td(off) tf Table 7. Switching times Parameter Test conditions Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 260 V, ID = 3 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19) Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage IRRM trr Qrr IRRM Min. Typ. - 12 12 37 19 Min. Typ. Max Unit - ns ns ns ns Source drain diode Symbol trr Qrr Electrical characteristics Test conditions Max. Unit - 6 24 A A ISD = 6 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 6 A, di/dt = 100 A/µs VDD = 60 V (see Figure 24) - 110 440 8 ns nC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 6 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 24) - 140 680 10 ns nC A Min. Typ. 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Table 8. Symbol BVGSO Gate-source Zener diode Parameter Test conditions Gate-source breakdown voltage Igs=± 1 mA (open drain) 30 Max. Unit - V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID 16387 Rev 2 5/16 Electrical characteristics STD7N52DK3, STF7N52DK3, STP7N52DK3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for DPAK Figure 3. Thermal impedance for DPAK Figure 5. Thermal impedance for TO-220FP Figure 7. Thermal impedance for TO-220 AM07185v1 ID (A) 10µs (o n) 100µs DS Op Lim era ite tion d by in th m is ax ar R e a is 10 1 1ms 10ms Tj=150°C Tc=25°C Single pulse 0.1 0.1 10 1 Figure 4. 100 VDS(V) Safe operating area for TO-220FP AM07186v1 ID (A) on ) 10µs S( pe ra ite tion d by in t m his ax a RD rea is 10 1ms Li O 100µs m 1 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 Figure 6. 10 1 100 Safe operating area for TO-220 AM07187v1 ID (A) 10 S( on ) Lim era ite tion d by in th m is ax ar RD ea is 10µs 100µs 1ms Op 1 VDS(V) 10ms Tj=150°C Tc=25°C Single pulse 0.1 0.1 6/16 1 10 100 VDS(V) Doc ID 16387 Rev 2 STD7N52DK3, STF7N52DK3, STP7N52DK3 Figure 8. Electrical characteristics Output characteristics Figure 9. Transfer characteristics AM07188v1 ID (A) AM07189v1 ID (A) VDS=20V 14 14 VGS=10V 7V 12 12 10 10 8 8 6 6 6V 4 4 2 2 5V 0 0 5 10 15 20 0 0 25 VDS(V) 1 2 3 4 5 6 7 8 9 VGS(V) Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance AM07190v1 VGS (V) 12 VGS VDD=420V ID=6A VDS 450 400 350 10 300 AM07191v1 RDS(on) (Ω) 1.06 VGS=10V 1.04 1.02 1.00 8 250 6 200 0.98 150 4 100 0.96 0.94 0.92 2 50 0.90 0 0 Qg(nC) 0.88 0 10 20 30 Figure 12. Capacitance variations 0 1 2 3 4 5 6 Figure 13. Output capacitance stored energy AM07192v1 C (pF) ID(A) AM07193v1 Eoss (µJ) 4.0 1000 Ciss 3.5 3.0 2.5 100 2.0 Coss 10 Crss 1.5 1.0 0.5 1 0.1 1 10 100 VDS(V) Doc ID 16387 Rev 2 0 0 100 200 300 400 500 VDS(V) 7/16 Electrical characteristics STD7N52DK3, STF7N52DK3, STP7N52DK3 Figure 14. Normalized gate threshold voltage vs temperature AM07194v1 VGS(th) (norm) Figure 15. Normalized on resistance vs temperature AM07195v1 RDS(on) (norm) 1.10 2.5 1.00 2.0 1.5 0.90 1.0 0.80 0.5 0.70 -75 25 -25 75 125 TJ(°C) Figure 16. Source-drain diode forward characteristics 1.0 -25 25 75 125 TJ(°C) Figure 17. Normalized BVDSS vs temperature AM07198v1 VSD (V) 0.0 -75 TJ=-50°C AM07196v1 BVDSS (norm) 1.10 0.9 1.05 0.8 TJ=25°C 0.7 TJ=150°C 1.00 0.6 0.95 0.5 0.4 0 10 30 20 40 50 ISD(A) 0.90 -75 Figure 18. Maximum avalanche energy vs starting Tj AM07197v1 EAS (mJ) ID=3 A VDD=50 V 110 100 90 80 70 60 50 40 30 20 10 0 0 8/16 20 40 60 80 100 120 140 TJ(°C) Doc ID 16387 Rev 2 -25 25 75 125 TJ(°C) STD7N52DK3, STF7N52DK3, STP7N52DK3 3 Test circuits Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 23. Unclamped inductive waveform AM01471v1 Figure 24. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 16387 Rev 2 10% AM01473v1 9/16 Package mechanical data 4 STD7N52DK3, STF7N52DK3, STP7N52DK3 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/16 Doc ID 16387 Rev 2 STD7N52DK3, STF7N52DK3, STP7N52DK3 Table 9. Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Figure 25. TO-220FP drawing L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_K Doc ID 16387 Rev 2 11/16 Package mechanical data STD7N52DK3, STF7N52DK3, STP7N52DK3 TO-220 type A mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max 4.60 0.88 1.70 0.70 15.75 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 16.40 28.90 3.75 2.65 3.85 2.95 0015988_Rev_S 12/16 Doc ID 16387 Rev 2 STD7N52DK3, STF7N52DK3, STP7N52DK3 Package mechanical data TO-252 (DPAK) mechanical data DIM. mm. min. typ max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 1 R V2 0.20 8o 0o 0068772_G Doc ID 16387 Rev 2 13/16 Package mechanical data 5 STD7N52DK3, STF7N52DK3, STP7N52DK3 Package mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 14/16 inch 1.5 D1 1.5 E 1.65 MIN. MAX. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 0.059 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 1.574 16.3 0.618 0.641 Doc ID 16387 Rev 2 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 0.059 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD7N52DK3, STF7N52DK3, STP7N52DK3 6 Revision history Revision history Table 10. Document revision history Date Revision Changes 09-Oct-2009 1 First release 20-Oct-2010 2 Document status promoted from preliminary data to datasheet Doc ID 16387 Rev 2 15/16 STD7N52DK3, STF7N52DK3, STP7N52DK3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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