SYNC-POWER SPN1423_12

SPN1423
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN1423 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching , and low in-line
power loss are needed in a very small outline surface
mount package.
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
FEATURES
20V/2.8A,RDS(ON)= 90mΩ@VGS=4.5V
20V/2.2A,RDS(ON)= 100mΩ@VGS=2.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-323 ( SC–70 ) package design
PIN CONFIGURATION ( SOT-323 ; SC-70 )
PART MARKING
2012/06/20 Ver.2
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SPN1423
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
Symbol
Description
1
G
Gate
2
S
3
D
Source
Drain
Part Number
Package
Part Marking
SPN1423S32RG
SOT-323
23YW
SPN1423S32RGB
SOT-323
23YW
ORDERING INFORMATION
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
※ SPN1423S32RG : Tape Reel ; Pb – Free
※ SPN1423S32RGB : Tape Reel ; Pb – Free ; Halogen – Free
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
20
V
Gate –Source Voltage
VGSS
±12
V
Continuous Drain Current(TJ=150℃)
TA=25℃
TA=70℃
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
ID
2.8
2.2
A
IDM
10
A
IS
1.6
A
PD
1.25
0.8
W
TJ
150
℃
Storage Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction to Ambient
RθJA
100
℃/W
Operating Junction Temperature
2012/06/20 Ver.2
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SPN1423
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
Gate Leakage Current
IGSS
Drain-Source On-Resistance
RDS(on)
Forward Transconductance
gfs
VDS=0V,VGS=±12V
VDS=20V,VGS=0V
VDS=20V,VGS=0V
TJ=55℃
VDS≧5V,VGS=4.5V
VDS≧5V,VGS=2.5V
VGS=4.5V,ID=2.8A
VGS=2.5V,ID=2.2A
VDS=5V,ID=2.8A
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
ID(on)
Diode Forward Voltage
VSD
IS=1.6A,VGS=0V
20
0.45
1.2
±100
1
10
5
4
V
nA
uA
A
0.055
0.075
10
0.090
0.100
0.85
1.2
5.4
10
Ω
S
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
VDS=10V,VGS=4.5V
ID≡2.8A
nC
0.65
1.4
340
VDS=10V,VGS=0V
f=1MHz
pF
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
33
td(on)
12
25
36
60
34
60
10
25
Turn-On Time
tr
Turn-Off Time
2012/06/20 Ver.2
td(off)
tf
VDD=10V,RL=5.5Ω
ID≡2.8A,VGEN=4.5V
RG=6Ω
115
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ns
SPN1423
N-Channel Enhancement Mode MOSFET
SOT-323 PACKAGE OUTLINE
2012/06/20 Ver.2
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SPN1423
N-Channel Enhancement Mode MOSFET
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No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions
mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information
previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support
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SYNC Power Corporation
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NanKang District (NKSP), Taipei, Taiwan 115
Phone: 886-2-2655-8178
Fax: 886-2-2655-8468
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2012/06/20 Ver.2
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