SPN1423 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1423 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter FEATURES 20V/2.8A,RDS(ON)= 90mΩ@VGS=4.5V 20V/2.2A,RDS(ON)= 100mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-323 ( SC–70 ) package design PIN CONFIGURATION ( SOT-323 ; SC-70 ) PART MARKING 2012/06/20 Ver.2 Page 1 SPN1423 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 G Gate 2 S 3 D Source Drain Part Number Package Part Marking SPN1423S32RG SOT-323 23YW SPN1423S32RGB SOT-323 23YW ORDERING INFORMATION ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPN1423S32RG : Tape Reel ; Pb – Free ※ SPN1423S32RGB : Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 20 V Gate –Source Voltage VGSS ±12 V Continuous Drain Current(TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ TA=70℃ ID 2.8 2.2 A IDM 10 A IS 1.6 A PD 1.25 0.8 W TJ 150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 100 ℃/W Operating Junction Temperature 2012/06/20 Ver.2 Page 2 SPN1423 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA Gate Leakage Current IGSS Drain-Source On-Resistance RDS(on) Forward Transconductance gfs VDS=0V,VGS=±12V VDS=20V,VGS=0V VDS=20V,VGS=0V TJ=55℃ VDS≧5V,VGS=4.5V VDS≧5V,VGS=2.5V VGS=4.5V,ID=2.8A VGS=2.5V,ID=2.2A VDS=5V,ID=2.8A Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Diode Forward Voltage VSD IS=1.6A,VGS=0V 20 0.45 1.2 ±100 1 10 5 4 V nA uA A 0.055 0.075 10 0.090 0.100 0.85 1.2 5.4 10 Ω S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss VDS=10V,VGS=4.5V ID≡2.8A nC 0.65 1.4 340 VDS=10V,VGS=0V f=1MHz pF Output Capacitance Coss Reverse Transfer Capacitance Crss 33 td(on) 12 25 36 60 34 60 10 25 Turn-On Time tr Turn-Off Time 2012/06/20 Ver.2 td(off) tf VDD=10V,RL=5.5Ω ID≡2.8A,VGEN=4.5V RG=6Ω 115 Page 3 ns SPN1423 N-Channel Enhancement Mode MOSFET SOT-323 PACKAGE OUTLINE 2012/06/20 Ver.2 Page 4 SPN1423 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2012/06/20 Ver.2 Page 5