SPN2038 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2038 is the N-Channel logic enhancement mode power field effect transistor which is produced with high cell density DMOS trench technology. The SPN2038 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS Power Management in Note book Powered System DC/DC Converter Load Switch FEATURES PIN CONFIGURATION TO-252 20V/14A, RDS(ON)= 16mΩ@VGS=4.5V 20V/7A,RDS(ON)= 22mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability PART MARKING 2012/09/17 Ver.2 Page 1 SPN2038 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 G Gate 2 S Source 3 D Drain Package Part Marking ORDERING INFORMATION Part Number SPN2038T252RGB TO-252 ※ SPN2038T252RGB : Tape Reel ; Pb – Free ; Halogen - Free SPN2038 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 20 V Gate –Source Voltage VGSS ±16 V Continuous Drain Current TC=25℃ TC=100℃ Pulsed Drain Current ID 28 18 A IDM 70 A PD 25 W TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Case RθJC 5 ℃/W Power Dissipation Operating Junction Temperature 2012/09/17 Ver.2 TC=25℃ Page 2 SPN2038 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) 20 0.5 1.2 VDS=0V,VGS=±16V VDS=16V,VGS=0V VDS=16V,VGS=0V TJ=55℃ VDS≥5V,VGS =4.5V Drain-Source On-Resistance RDS(on) Forward Transconductance gfs VGS= 4.5V,ID=14A VGS=2.5V,ID=7A VDS=5V,ID=14A Diode Forward Voltage VSD IS=1A,VGS =0V ±100 1 5 28 V nA uA A 0.016 0.022 30 0.02 0.028 Ω S 1.2 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss 9.8 VDS=15V, VGS=4.5V ID= 14A 3 772 VDS=15, VGS=0V f=1MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 79 td(on) 4 Turn-On Time tr Turn-Off Time 2012/09/17 Ver.2 td(off) tf nC 2.1 VDD=10V, ID≡14A, VGS=4.5V, RG=3.3Ω pF 83 12.5 nS 20 8 Page 3 SPN2038 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Fig. 1 Typical Output Characteristics Fig. 2 On-Resistance vs Gate Voltage Fig. 3 Forward Characteristics Fig. 4 Total Gate Charge Fig. 5 Vgs vs Temperature 2012/09/17 Ver.2 Fig. 6 Rdson vs Temperature Page 4 SPN2038 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Fig. 7 Capacitance vs Vds Fig. 8 Safe Operation Region Fig. 9 Maximum Transient Thermal Impedance Fig. 10 Switching Time Waveform 2012/09/17 Ver.2 Fig. 11 Gate Charge Waveform Page 5 SPN2038 N-Channel Enhancement Mode MOSFET TO-252 PACKAGE OUTLINE 2012/09/17 Ver.2 Page 6 SPN2038 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2012 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2012/09/17 Ver.2 Page 7