TAYCHIPST VSSA310

VSSA310
100V
Surface Mount Trench MOS Barrier Schottky Rectifier
3.0A
FEATURES
• Low profile package
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Not recommended for PCB bottom side wave mounting
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
Mechanical Data
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSSA310S
Device marking code
UNIT
V3B
Maximum repetitive peak reverse voltage
100
VRRM
Maximum DC forward current
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
V
IF
(1)
3.0
IF
(2)
1.7
IFSM
60
A
TJ, TSTG
- 40 to + 150
°C
A
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Breakdown voltage
Instantaneous forward voltage
TEST CONDITIONS
IR = 1.0 mA
IF = 3.0 A
VR = 70 V
Reverse current
VR = 100 V
Typical junction capacitance
TA = 25 °C
TA = 25 °C
TA = 125 °C
SYMBOL
TYP.
MAX.
UNIT
VBR
100 (minimum)
-
V
0.71
0.80
0.62
0.70
VF
(1)
TA = 25 °C
TA = 125 °C
TA = 25 °C
IR
(2)
TA = 125 °C
4.0 V, 1 MHz
CJ
V
1.0
-
μA
0.95
-
mA
3.5
150
μA
2.2
15
mA
175
-
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
VSSA310S
RJA
(1)
135
RJM
(2)
25
UNIT
°C/W
Notes
(1) Free air, mounted on recommended PCB 1 oz. pad area; thermal resistance R
JA - junction to ambient
(2) Units mounted on P.C.B. with 10 mm x 10 mm copper pad areas; R
JM - junction to mount
E-mail: [email protected]
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Web Site: www.taychipst.com
VSSA310
100V
Surface Mount Trench MOS Barrier Schottky Rectifier
RATINGS AND CHARACTERISTIC CURVES
Average Forward Rectified Current (A)
3.5
Average Power Loss (W)
2.5
2.0
1.5
1.0
TM Measured at Terminal
0.5
D = 0.8
D = 0.2
1.6
1.4
D = 1.0
D = 0.1
1.2
1.0
0.8
T
0.6
0.4
0.2
D = tp/T
tp
0
0
25
50
75
100
125
0
150
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
TM - Mount Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
10 000
Junction Capacitance (pF)
100
Instantaneous Forward Current (A)
D = 0.5
D = 0.3
1.8
0
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
TA = 25 °C
0.1
0.1
10
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.1
0.9
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
100
1000
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
VSSA310
2.0
3.0
3.0A
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
0.1
0.01
TA = 25 °C
0.001
20
40
60
80
Junction to Ambient
100
10
1
0.01
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Transient Thermal Impedance
E-mail: [email protected]
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Web Site: www.taychipst.com