U1B THRU U1D 100V-200V Surface Mount Ultrafast Plastic Rectifier 1.0A FEATURES • Oxide planar chip junction • Ultrafast recovery time • Low forward voltage, low power losses • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Mechanical Data • Oxide planar chip junction • Ultrafast recovery time • Low forward voltage, low power losses • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code U1B U1C U1D U1B U1C U1D 100 150 200 UNIT V Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current (Fig. 1) IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A TJ, TSTG - 55 to + 150 °C Operating junction and storage temperature range ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. 0.82 0.87 0.87 0.92 0.71 0.76 0.78 0.84 UNIT IF = 0.6 A IF = 1.0 A TA = 25 °C IF = 0.6 A IF = 1.0 A TA = 100 °C rated VR TA = 25 °C TA = 100 °C IR 55 5.0 100 µA IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A TA = 25 °C trr - 15 ns IF = 0.6 A, dI/dt = 50 A/µs, VR = 30 V, Irr = 0.1 IRM TA = 25 °C TA = 100 °C trr 24 29 - ns Storage charge IF = 0.6 A, dI/dt = 50 A/µs, VR = 30 V, Irr = 0.1 IRM TA = 25 °C TA = 100 °C Qrr 7 13 - nC Typical junction capacitance 4.0 V, 1 MHz CJ 6.8 - pF Instantaneous forward voltage (1) Reverse current (2) Reverse recovery time E-mail: [email protected] VF 1 of 2 V Web Site: www.taychipst.com U1B THRU U1D 100V-200V Surface Mount Ultrafast Plastic Rectifier RATINGS AND CHARACTERISTIC CURVES U1B THRU U1D 1.0 1.2 D = 0.8 1.0 Average Power Loss (W) Average Forward Current (A) D = 0.5 0.8 0.6 0.4 0.2 80 90 0.8 D = 0.2 D = 1.0 D = 0.1 0.6 0.4 T 0.2 D = tp/T tp 100 110 120 130 140 0 150 0.2 0.4 0.8 1.0 0.6 1.2 TM - Mount Temperature (°C) Average Forward Current (A) Figure 1. Forward Derating Curve Figure 2. Forward Power Loss Characteristics 10 10 TA = 150 °C 1 Junction Capactiance (pF) Instantaneous Forward Current (A) D = 0.3 0 0 TA = 125 °C TA = 100 °C 0.1 TA = 25 °C 0.01 0.1 0.3 0.5 0.7 0.9 1.1 TJ = 25 °C f = 1.0 MHz Vstg = 50 mVp-p 1 0.1 1.3 1 10 100 Reverse Voltage (V) Instantaneous Forward Voltage (V) Figure 5. Typical Junction Capacitance Figure 3. Typical Instantaneous Forward Characteristics 100 Transient Thermal Impedance (°C/W) 1000 Instantaneous Reverse Current (µA) 1.0A TA = 150 °C 100 TA = 125 °C TA = 100 °C 10 1 TA = 25 °C 0.1 20 30 40 50 60 70 80 90 10 1 0.001 0.01 10 Junction to Ambient 100 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Figure 6. Typical Transient Thermal Impedance E-mail: [email protected] 2 of 2 Web Site: www.taychipst.com