TQP7M9103 1W High Linearity Amplifier Applications Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless 3-pin SOT-89 Package Product Features Functional Block Diagram 400-4000 MHz +29.5 dBm P1dB +45 dBm Output IP3 16.5 dB Gain @ 2140 MHz +5V Single Supply, 235 mA Current Internal RF overdrive protection Internal DC overvoltage protection On chip ESD protection Capable of handling 10:1 VSWR @ 5Vcc, 2.14 GHz, 29.5 dBm CW Pout or 20 dBm WCDMA Pout SOT-89 Package General Description GND 4 1 2 3 RF IN GND RF OUT Pin Configuration The TQP7M9103 is a high linearity driver amplifier in industry standard, RoHS compliant, SOT-89 surface mount package. This InGaP/GaAs HBT delivers high performance across a broad range of frequencies while achieving +45 dBm OIP3 and +29.5 dBm P1dB while only consuming 235 mA quiescent current. All devices are 100% RF and DC tested. Pin # Symbol 1 3 2, 4 RF Input RF Output / Vcc Ground The TQP7M9103 incorporates on-chip features that differentiate it from other products in the market. The amplifier integrates an on-chip DC over-voltage and RF over-drive protection. This protects the amplifier from electrical DC voltage surges and high input RF input power levels that may occur in a system. The TQP7M9103 is targeted for use as a driver amplifier in wireless infrastructure where high linearity, medium power, and high efficiency are required. The device an excellent candidate for transceiver line cards and high power amplifiers in current and next generation multicarrier 3G / 4G base stations. Ordering Information Part No. TQP7M9103 TQP7M9103-PCB900 TQP7M9103-PCB2140 Description 1 W High Linearity Amplifier TQP7M9103 920-960MHz EVB TQP7M9103 2.11-2.17GHz EVB Standard T/R size = 1000 pieces on a 7” reel. Data Sheet: Rev F 04/26/12 © 2012 TriQuint Semiconductor, Inc. - 1 of 14 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TQP7M9103 1W High Linearity Amplifier Specifications Absolute Maximum Ratings Parameter Storage Temperature Device Voltage, Vcc Maximum Input Power, CW Recommended Operating Conditions Rating Parameter -65 to +150 oC +8 V +30 dBm Vcc Tcase Tj (for>106 hours MTTF) Operation of this device outside the parameter ranges given above may cause permanent damage. Min -40 Typ Max Units +5 +5.25 +85 +170 V o C o C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: +25ºC, +5V Vsupply, 50 Ω system, tuned application circuit Parameter Operational Frequency Range Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 WCDMA Pout @ -50 dBc ACLR Noise Figure Vcc Quiescent Current, Icq Thermal Resistance (jnc to case) θjc Conditions Min 400 14.7 See Note 1. See Note 2. +28.5 +42.5 210 Typical 2140 16.6 12.0 15.0 +29.5 +45 +20 4.4 +5 235 Max 4000 17.7 260 35.6 Units MHz MHz dB dB dB dBm dBm dBm dB V mA o C/W Notes 1. OIP3 measured with two tones at an output power of +15 dBm / tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the OIP3 using 2:1 rule. 2. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob. Data Sheet: Rev F 04/26/12 © 2012 TriQuint Semiconductor, Inc. - 2 of 14 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TQP7M9103 1W High Linearity Amplifier Device Characterization Data Gain and Maximum Stable Gain 30 Output Smith Chart Input Smith Chart 1 Gain (Max) 25 0.8 4 GHz 4 GHz Gain (dB) 0.6 20 0.4 15 0.01 GHz Gain (S21) 0.2 0 10 0.01 GHz -0.2 0 0.25 0.5 0.75 1 -1 -0.75-0.5-0.25 -0.4 5 -0.6 0 0 0.5 1 1.5 2 2.5 3 3.5 -0.8 4 -1 Frequency (GHz) Note: The gain for the unmatched device in 50 ohm system is shown as the trace in red color, [gain (S(21)]. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the black [Gain (MAX)]. The impedance plots are shown from 0.01 – 4 GHz. S-Parameter Data Vcc = +5 V, Icq = 235 mA, T = +25°C, unmatched 50 ohm system, calibrated to device leads Freq S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) (MHz) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 3200 3400 3600 3800 4000 -1.05 -1.15 -2.07 -1.01 -0.61 -0.59 -0.62 -0.62 -0.67 -0.64 -0.75 -0.64 -0.62 -0.77 -0.66 -0.73 -0.69 -0.74 -0.74 -0.72 -0.77 -0.80 179.35 176.19 171.50 -176.54 173.92 169.36 164.62 160.93 156.67 153.26 149.43 145.77 142.62 139.07 135.41 132.81 128.99 125.72 122.13 119.18 116.00 113.01 Data Sheet: Rev F 04/26/12 © 2012 TriQuint Semiconductor, Inc. 15.75 13.33 11.63 15.01 13.87 13.05 12.35 11.51 10.73 10.00 9.12 8.50 7.90 7.16 6.58 6.04 5.51 5.01 4.52 4.02 3.52 3.15 154.01 155.93 168.26 153.46 137.55 125.26 114.05 103.77 94.67 86.25 78.19 70.63 63.72 57.32 51.13 45.43 39.41 33.18 27.44 22.42 16.74 11.74 - 3 of 14 - -35.54 -35.54 -37.45 -36.02 -35.08 -34.89 -34.56 -34.60 -34.79 -34.75 -34.75 -34.81 -34.51 -34.72 -34.60 -34.65 -34.51 -34.65 -34.60 -34.56 -34.37 -34.33 S12 (ang) S22 (dB) S22 (ang) -2.51 -9.63 -27.07 22.73 6.61 0.27 -4.24 -7.64 -12.27 -15.00 -17.78 -20.08 -23.77 -26.63 -29.04 -33.24 -33.49 -34.26 -37.56 -43.68 -44.96 -46.26 -2.94 -2.28 -2.00 -3.38 -3.21 -3.18 -3.13 -3.21 -3.18 -3.21 -3.25 -3.09 -3.24 -3.10 -3.07 -3.16 -3.09 -3.12 -3.09 -3.13 -3.04 -2.96 -171.04 -176.20 176.45 172.64 171.33 168.76 166.33 164.22 162.12 159.50 156.37 154.32 151.96 148.69 147.12 144.43 141.32 138.96 136.12 133.54 130.91 128.69 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TQP7M9103 1W High Linearity Amplifier Reference Design 869-894 MHz C5 Typical Performance at +25 C (MHz) 869 880 894 Gain dB 20.8 20.8 20.8 Input Return Loss dB -17.5 -18.7 -17.2 Output Return Loss dB -14.3 -14.4 -14.5 Output P1dB dBm +29.2 +29.3 +29.4 Output IP3 dBm +43.6 +42.9 +42.3 (+19 dBm/tone, ∆f = 1 MHz) WCDMA Channel power dB 19.7 19.7 19.7 Supply Voltage, Vcc Quiescent Collector Current, Icq V +5 mA 235 (at -50 dBc ACLR) 1.0 uF C4 J3 +5V C3 J4 GND 100 pF L1 33 nH C1 J1 J3 J4 0.1 uF RF Input C5 C4 R1 3.3 pF C6 1 U1 TQP7M9103 0Ω C2 L2 3 2.2 nH 2,4 C7 4.7 pF 100 pF J2 RF Output 4.7 pF C3 Notes: L1 U1 R1 L2 C2 C7 C6 C1 1. 2. 3. 4. See PC Board Layout, page 11 for more information. The recommended component values are dependent upon the frequency of operation. All components are of 0603 size unless stated on the schematic. Critical component placement locations: Distance from U1 Pin 1 Pad (left edge) to R1 (right edge): 128 mils (5.7º at 880 MHz) Distance from R1 (left edge) to C6 (right edge): 205 mils (9.1º at 880 MHz) Distance from C6 (left edge) to C1 (right edge): 10 mils (0.5º at 880 MHz) Distance from U1 Pin 3 Pad (right edge) to L2 (left edge): 130 mils (5.8º at 880 MHz) Distance from L2 (right edge) to C7 (left edge): 60 mils (2.7º at 880 MHz) RF Performance Plots 869-894 MHz Gain vs. Frequency Input Return Loss (dB) 21 Gain (dB) Input Return Loss vs. Frequency 0 Temp.=+25°C 20 19 18 -5 -10 -15 -20 870 880 890 900 860 870 Frequency (MHz) 17 18 19 Output Power (dBm) 870 20 Data Sheet: Rev F 04/26/12 © 2012 TriQuint Semiconductor, Inc. 21 880 890 900 OIP3 vs. Total Output Power vs. Freq 869 MHz 880 MHz 894 MHz 45 29 40 35 30 27 16 -20 50 28 15 -15 Frequency (MHz) -60 -65 -10 860 OIP3 (dBm) P1dB (dBm) ACLR (dBc) 869 MHz 880 MHz 894 MHz -55 900 890 30 -45 -50 880 P1dB vs. Frequency 31 W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.2 dB @ 0.01% Probability, 3.84 MHz BW -40 -5 Frequency (MHz) ACLR vs. Output Power vs. Freq -35 Temp.=+25°C -25 -25 860 Output Return Loss vs. Frequency 0 Temp.=+25°C Output Return Loss (dB) 22 870 875 880 885 Frequency (MHz) - 4 of 14 - 890 895 25 17 18 19 Total Output Power (dBm) 20 21 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TQP7M9103 1W High Linearity Amplifier Application Circuit 920-960 MHz (TQP7M9103-PCB900) C5 J3 J4 1.0 uF C5 C4 C4 J3 +5V C3 L1 U1 R1 L2 C7 C6 C1 0.1 uF C3 J4 GND C2 L1 33 nH 0805 J1 RF Input C1 3.3 pF R1 C6 0Ω 1 U1 TQP7M9103 2,4 3.9 pF 3 100 pF C2 L2 2.2 nH C7 100 pF J2 RF Output 4.7 pF Notes: 1. See PC Board Layout, page 11 for more information. 2. Components shown on the silkscreen but not on the schematic are not used. 3. The recommended component values are dependent upon the frequency of operation. 4. All components are of 0603 size unless stated on the schematic. 5. Critical component placement locations: Distance from U1 Pin 1 Pad (left edge) to R1 (right edge): 125 Mils (5.8º at 920 MHz) Distance from R1 (left edge) to C6 (right edge): 169 Mils (7.9º at 920 MHz) Distance from C6 (left edge) to C1 (right edge): 51 Mils (2.4º at 920 MHz) Distance from U1 Pin 3 Pad (right edge) to L2 (left edge): 120 Mils (5.6º at 920 MHz) Distance from L2 (right edge) to C7 (left edge): 62 Mils (2.9º at 920 MHz) Bill of Material Ref Des n/a U1 C1 C2, C3 C4 C5 C6 C7 L1 L2 R1 Value n/a n/a 3.3 pF 100 pF 0.1 uF 1.0 uF 3.9 pF 4.7 pF 33 nH 2.2 nH 0Ω Description Printed Circuit Board TQP7M9103 Amplifier, SOT-89 pkg. Cap., Chip, 0603, +/-0.1pF, 50V, Accu-P Cap., Chip, 0603, 5%, 50V, NPO/COG Cap., Chip, 0603, 10%, 16V, X7R Cap., Chip, 0603, 10%, 10V, X5R Cap., Chip, 0603, +/-0.05pF, 50V, Accu-P Cap., Chip, 0603, +/-0.05pF, 50V, Accu-P Inductor, 0805, 5%, Coilcraft CS Series Inductor, 0603, +/-0.3 nH Resistor, Chip, 0603, 5%, 1/16W Data Sheet: Rev F 04/26/12 © 2012 TriQuint Semiconductor, Inc. - 5 of 14 - Manuf. TriQuint TriQuint AVX various various various AVX AVX Coilcraft Toko various Part Number 1080068 1077953 06035J3R3ABSTR 06035J3R9ABSTR 06035J4R7ABSTR 0805CS-330XJLB LL1608-FSL2N2S Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TQP7M9103 1W High Linearity Amplifier Typical Performance 920-960 MHz (TQP7M9103-PCB900) Frequency MHz Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (+19 dBm/tone, ∆f = 1 MHz) WCDMA Channel power (at -50 dBc ACLR) [1] Noise Figure Supply Voltage, Vcc Quiescent Collector Current, Icq 920 dB dB dB dBm dBm dBm dB V mA 940 20.6 -10.0 -19.4 +29.5 +46.7 +20 5.8 960 20.7 -10.8 -20.4 +29.4 +45.4 +20 5.8 +5 235 20.8 -10.8 -22.5 +29.5 +44.0 +20 5.8 Notes: 1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob. RF Performance Plots 920-960 MHz (TQP7M9103-PCB900) Input Return Loss (dB) Gain (dB) 21 20 +85°C +25°C 40°C 19 Input Return Loss vs. Frequency 0 18 17 +85°C +25°C 40°C -5 -10 -15 -20 -25 920 930 940 950 960 930 940 18 19 20 - 40 C +25 C +85 C 15 16 17 18 19 20 21 17 Frequency (MHz) Data Sheet: Rev F 04/26/12 © 2012 TriQuint Semiconductor, Inc. 960 20 21 400 40 - 40 C +25 C +85 C 35 300 200 100 25 950 19 500 30 27 18 Icc vs. Output Power at 940 MHz 600 Icc (mA) OIP3 (dBm) - 40 C +25 C +85 C 940 16 Pout/tone (dBm) OIP3 vs. Pout/tone vs. Temp. 50 29 930 35 15 45 920 920 MHz 940 MHz 960 MHz Output Power (dBm) 30 28 40 25 14 P1dB vs Frequency Over Temperature 960 30 Output Power (dBm) 31 950 45 -55 21 940 OIP3 vs. Pout/tone vs. Freq. 50 -65 -65 17 930 Frequency (MHz) -60 16 -20 920 OIP3 (dBm) ACLR (dBc) ACLR (dBc) 920 MHz 940 MHz 960 MHz 15 +85°C +25°C 40°C -15 960 -50 -60 P1dB (dBm) 950 ACLR vs Output Power at 940MHz -45 -50 14 -10 Frequency (MHz) ACLR vs Output Power at +25ºC -55 -5 -25 920 Frequency (MHz) -45 Output Return Loss vs. Frequency 0 Output Return Loss (dB) Gain vs. Frequency 22 0 15 16 17 18 Pout/tone (dBm) - 6 of 14 - 19 20 21 21 23 25 27 29 31 Output Power (dBm) Disclaimer: Subject to change without notice ® Connecting the Digital World to the Global Network TQP7M9103 1W High Linearity Amplifier Reference Design 1805-1880 MHz C5 Typical Performance at +25 C (MHz) 1805 1850 1880 Gain dB 17.7 17.7 17.7 Input Return Loss dB -11.6 -12.3 -12.1 Output Return Loss dB -16.1 -16.3 -16.6 Output P1dB dBm +29.5 +29.6 +29.5 Output IP3 dBm +44.1 +43.8 +43.2 (+16 dBm/tone, ∆f = 1 MHz) WCDMA Channel power dB +20.0 +20.2 +20.2 Supply Voltage, Vcc Quiescent Collector Current, Icq V +5 mA 235 (at -50 dBc ACLR) 1.0 uF C4 J3 +5V 22 pF L1 12 nH J1 C5 RF Input C4 C1 1 2.7 pF 2,4 C6 J2 3 C7 68 pF RF Output 1.8 pF L1 U1 C2 C7 C6 C1 C2 U1 TQP7M9103 2.4 pF C3 R1 C3 J4 GND J3 J4 0.1 uF Notes: 1. 2. 3. 4. See PC Board Layout, page 11 for more information. All components are of 0603 size unless otherwise stated. Component (R1) on PCB board is a 0 Ohm jumper and can be replaced by a copper trace. Critical component placement locations: Distance from U1 Pin 1 Pad (left edge) to C6 (right edge): 45 mils (4.2º at 1850 MHz) Distance from C6 (left edge) to C1 (right edge): 20 mils (1.9º at 1850 MHz) Distance from U1 Pin 3 Pad (right edge) to C7 (left edge): 185 mils (17.3º at 1850 MHz) RF Performance Plots 1805-1880 MHz Gain vs. Frequency 10 5 0 1800 1810 1820 1830 1840 1850 1860 1870 1880 ACLR (dBc) OIP3 (dBm) 1805 MHz 1840 MHz 1880 MHz 17 18 19 20 Output Power (dBm) -20 21 Data Sheet: Rev F 04/26/12 © 2012 TriQuint Semiconductor, Inc. -5 -10 -15 -20 30 P1dB vs. Frequency 29 1805 MHz 1840 MHz 1880 MHz 40 35 25 Temp.=+25°C Frequency (MHz) OIP3 vs. Pout/tone over Freq 28 27 26 30 22 Output Return Loss vs. Frequency -25 1800 1810 1820 1830 1840 1850 1860 1870 1880 45 -55 16 -15 50 W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.2 dB @ 0.01% Probability, 3.84 MHz BW -50 -65 -10 Frequency (MHz) ACLR vs. Output Power vs. Freq -60 -5 -25 1800 1810 1820 1830 1840 1850 1860 1870 1880 Frequency (MHz) -45 0 Temp.=+25°C Output Return Loss (dB) Input Return Loss (dB) Gain (dB) 15 -40 Input Return Loss vs. Frequency 0 Temp.=+25°C P1dB (dBm) 20 11 13 15 Pout/Tone (dBm) - 7 of 14 - 17 19 25 1800 1810 1820 1830 1840 1850 1860 1870 1880 Frequency (MHz) Disclaimer: Subject to change without notice ® Connecting the Digital World to the Global Network TQP7M9103 1W High Linearity Amplifier Reference Design 1930-1960 MHz C4 Typical Performance at +25 C (MHz) 1930 1960 1990 Gain dB 17.0 17.0 16.9 Input Return Loss dB -15.2 -17.8 -18.3 Output Return Loss dB -13.0 -12.9 -12.8 Output P1dB dBm +29.3 +29.3 +29.3 Output IP3 dBm +44.0 +45.2 +44.2 (+16 dBm/tone, ∆f = 1 MHz) WCDMA Channel power dB +20.0 +20.0 +20.0 Supply Voltage, Vcc Quiescent Collector Current, Icq V +5 mA 235 (at -50 dBc ACLR) [1] J3 +5V 1.0 uF 22 pF L1 22 nH C1 J1 J4 C3 J4 GND RF Input J3 C4 1.5 pF C2 U1 1 TQP7M9103 3 2,4 C5 22 pF C6 2.0 pF J2 RF Output 1.5 pF C3 Notes: C2 C6 C5 C1 L1 U1 R1 1. 2. 3. 4. 5. See PC Board Layout, page 11 for more information. The recommended component values are dependent upon the frequency of operation. Component (R1) on PCB board is a 0 Ohm jumper and can be replaced by a copper trace. All components are of 0603 size unless stated on the schematic. Critical component placement locations: Distance from U1 Pin 1 Pad (left edge) to C5 (right edge): 55 mils (5.5º at 1960 MHz) Distance from C5 (left edge) to C1 (right edge): 10 mils (1.0º at 1960 MHz) Distance from U1 Pin 3 Pad (right edge) to C6 (left edge): 125 mils (12.4º at 1960 MHz) RF Performance Plots 1930-1990 MHz Gain vs. Frequency 16 15 14 1950 1960 1970 Frequency (MHz) 1980 -65 OIP3 (dBm) 1930 MHz 1960 MHz 1990 MHz 12 14 16 Output Power (dBm) -15 -20 1940 1950 1960 1970 1980 Frequency (MHz) OIP3 vs. Pout/tone over Freq 18 Data Sheet: Rev F 04/26/12 © 2012 TriQuint Semiconductor, Inc. -10 -15 -20 1940 1950 1960 1970 Frequency (MHz) 1980 1990 P1dB vs. Frequency 29 40 1930 MHz 1960 MHz 1990 MHz 35 25 Temp.=+25°C 30 Temp.=+25°C 30 20 Output Return Loss vs. Frequency -5 -25 1930 1990 45 -55 -60 -10 50 W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.2 dB @ 0.01% Probability, 3.84 MHz BW -50 -5 -25 1930 1990 ALCR vs Output Power over Freq -45 ACLR (dBc) 1940 0 Temp.=+25°C Output Return Loss (dB) Input Return Loss (dB) Gain (dB) 17 13 1930 Input Return Loss vs. Frequency 0 Temp.=+25°C P1dB (dBm) 18 28 27 26 12 13 14 15 Pout/Tone (dBm) - 8 of 14 - 16 17 18 25 1930 1940 1950 1960 1970 Frequency (MHz) 1980 1990 Disclaimer: Subject to change without notice ® Connecting the Digital World to the Global Network TQP7M9103 1W High Linearity Amplifier Application Circuit 2110-2170 MHz (TQP7M9103-PCB2140) C5 J4 J3 1.0 uF C5 C4 C4 J3 Vcc C3 R2 C8 C7 C1 C6 R1 0.1 uF L1 U1 C3 J4 GND C2 L1 33 nH 0805 J1 RF Input C1 1 1.5 pF U1 TQP7M9103 C7 0Ω 1.2 pF 1.5 pF C2 R2 3 2,4 C6 22 pF C8 22 pF J2 RF Output 0.6 pF Notes: 1. See PC Board Layout, page 11 for more information. 2. Components shown on the silkscreen but not on the schematic are not used. 3. Component (R1) is a 0 Ω resistors may be replaced with copper trace in the target application layout. 4. The recommended component values are dependent upon the frequency of operation. 5. All components are of 0603 size unless stated on the schematic. 6. Critical component placement locations: Distance from U1 Pin 1 Pad (left edge) to C6 (right edge): 28 Mils (3.0º at 2140 MHz) Distance from C6 (left edge) to C1 (right edge): 65 Mils (7.0º at 2140 MHz) Distance from U1 Pin 3 Pad (right edge) to C7 (left edge): 31 Mils (3.4º at 2140 MHz) Distance from C7 (right edge) to R2 (left edge): 60 Mils (6.5º at 2140 MHz) Distance from R2 (right edge) to C8 (left edge): 62 Mils (6.7 at 2140 MHz) Bill of Material Ref Des n/a U1 C1, C6 C2, C3 C4 C5 C7 C8 R1, R2 L1 Value n/a n/a 1.5 pF 22 pF 0.1 uF 1.0 uF 1.2 pF 0.6 pF 0Ω 33 nH Description Printed Circuit Board TQP7M9103 Amplifier, SOT-89 pkg. Cap., Chip, 0603, +/-0.05pF, 50V, Accu-P Cap., Chip, 0603, 5%, 50V, NPO/COG Cap., Chip, 0603, 10%, 16V, X7R Cap., Chip, 0603, 10%, 10V, X5R Cap., Chip, 0603, +/-0.05pF, 50V, Accu-P Cap., Chip, 0603, +/-0.05pF, 50V, Accu-P Resistor, Chip, 0603, 5%, 1/16W Inductor, 0805, 5%, Coilcraft CS Series Data Sheet: Rev F 04/26/12 © 2012 TriQuint Semiconductor, Inc. - 9 of 14 - Manuf. TriQuint TriQuint AVX various various various AVX AVX various Coilcraft Part Number 1080068 TQP7M9103 06032U1R5BAT2A 06035J1R2ABSTR 06035J0R6ABSTR 0805CS-330XJLB Disclaimer: Subject to change without notice ® Connecting the Digital World to the Global Network TQP7M9103 1W High Linearity Amplifier Typical Performance 2110-2170 MHz (TQP7M9103-PCB2140) Frequency MHz Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (+15 dBm/tone, ∆f = 1 MHz) WCDMA Channel power (at -50 dBc ACLR) [1] Noise Figure Supply Voltage, Vcc Quiescent Collector Current, Icq 2110 dB dB dB dBm dBm dBm dB V mA 2140 16.7 -11.7 -16.5 +29.5 +45.0 +20 4.4 2170 16.6 -12.0 -16.0 +29.5 +45.0 +20 4.4 +5 235 16.6 -11.7 -15.2 +29.6 +45.0 +20 4.6 Notes: 1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob. RF Performance Plots 2110-2170 MHz (TQP7M9103-PCB2140) Input Return Loss (dB) Gain (dB) 17 16 +85°C +25°C 40°C 15 14 13 2110 2120 2130 2140 2150 Input Return Loss vs. Frequency 0 2160 +85°C +25°C 40°C -5 -10 -15 -20 -25 2110 2170 2120 2130 Frequency (MHz) 2110 MHz 2140 MHz 2170 MHz 15 16 -55 +85 C +25 C - 40 C 17 18 19 14 30 P1dB (dBm) - 40 C +25 C +85 C 40 15 16 17 18 19 35 25 12 13 14 15 16 17 Pout/tone (dBm) Data Sheet: Rev F 04/26/12 © 2012 TriQuint Semiconductor, Inc. 18 2170 12 13 14 15 16 17 18 Pout/tone (dBm) P1dB vs Frequency Over Temperature Icc vs. Output Power at 2140 MHz 600 +85 C +25 C - 40 C 500 400 29 300 200 28 30 2160 35 20 Icc (mA) 31 45 2150 2110 MHz 2140 MHz 2170 MHz 40 Output Power (dBm) OIP3 vs. Pout/tone vs. Temp. 2140 25 13 20 2130 30 Output Power (dBm) 50 2120 OIP3 vs. Pout/tone vs. Freq. 50 -65 -65 14 -20 45 -60 -60 13 -15 Frequency (MHz) OIP3 (dBm) -55 +85°C +25°C 40°C -10 -25 2110 2170 -50 ACLR (dBc) ACLR (dBc) 2160 ACLR vs Output Power at 2.14GHz -45 -50 OIP3 (dBm) 2150 -5 Frequency (MHz) ACLR vs Output Power at +25ºC -45 2140 Output Return Loss vs. Frequency 0 Output Return Loss (dB) Gain vs. Frequency 18 27 2110 100 0 2120 2130 2140 2150 Frequency (MHz) - 10 of 14 2160 2170 22 24 26 28 30 32 Output Power (dBm) Disclaimer: Subject to change without notice ® Connecting the Digital World to the Global Network TQP7M9103 1W High Linearity Amplifier Reference Design 2300-2400 MHz C5 Typical Performance at +25 C (MHz) 2300 2350 2400 Gain dB 16.1 16.1 15.9 Input Return Loss dB -13.7 -15.7 -14.0 Output Return Loss dB -15.4 -14.8 -14.0 Output P1dB dBm +29.2 +29.2 +29.3 Output IP3 dBm +45.6 +44.2 +45.2 (+15 dBm/tone, ∆f = 1 MHz) WCDMA Channel power dB +20.0 +19.9 +19.9 Supply Voltage, Vcc Quiescent Collector Current, Icq V +5 mA 235 (at -50 dBc ACLR) [1] 1.0 uF C4 J3 +5V 100 pF L1 24 nH C1 J1 1 RF Input C5 C4 1.0 pF J2 3 2,4 1.2 pF 22 pF C7 C8 1.0 pF 0.6 pF RF Output Notes: L1 U1 1. 2. 3. 4. 5. C2 C8 C7 C6 C1 C2 U1 TQP7M9103 C6 C3 R1 C3 J4 GND J3 J4 0.1 uF See PC Board Layout, page 11 for more information. The recommended component values are dependent upon the frequency of operation. Component (R1) on PCB board is a 0 Ohm jumper and can be replaced by a copper trace. All components are of 0603 size unless stated on the schematic. Critical component placement locations: Distance from U1 Pin 1 Pad (left edge) to C6 (right edge): 30 mils (3.6º at 2350 MHz) Distance from C6 (left edge) to C1 (right edge): 75 mils (8.9º at 2350 MHz) Distance from U1 Pin 3 Pad (right edge) to C7 (left edge): 30 mils (3.6º at 2350 MHz) Distance from C7 (right edge) to C8 (left edge): 147 mils (17.5º at 2350 MHz) RF Performance Plots 2300-2400 MHz 0 Temp.=+25°C Input Return Loss (dB) Gain (dB) 16 15 14 13 12 2300 2320 2340 2360 2380 -10 -15 -20 2320 ACLR vs. Output Power vs. Freq 17 18 20 Output Power (dBm) -15 -20 2320 2340 21 Data Sheet: Rev F 04/26/12 © 2012 TriQuint Semiconductor, Inc. 22 2380 2400 45 29 27 2300 2360 OIP3 vs. Total Output Power vs. Freq 50 28 19 -10 Frequency (MHz) OIP3 (dBm) P1dB (dBm) ACLR (dBc) 2300 MHz 2350 MHz 2400 MHz -55 -60 -5 -25 2300 2400 30 -45 -50 2380 P1dB vs. Frequency 31 W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.2 dB @ 0.01% Probability, 3.84 MHz BW -40 2360 Temp.=+25°C Frequency (MHz) Frequency (MHz) -35 2340 Output Return Loss vs. Frequency 0 Temp.=+25°C -5 -25 2300 2400 Input Return Loss vs. Frequency Output Return Loss (dB) Gain vs. Frequency 17 40 2300 MHz 2350 MHz 2400 MHz 35 30 2320 2340 2360 Frequency (MHz) - 11 of 14 2380 2400 25 12 14 16 Total Output Power (dBm) 18 20 Disclaimer: Subject to change without notice ® Connecting the Digital World to the Global Network TQP7M9103 1W High Linearity Amplifier Pin Configuration and Description GND 4 Pin Symbol 1 RF IN 2, 4 GND 3 RFout / Vcc 1 2 3 RF IN GND RF OUT Description RF Input. Requires external match for optimal performance. External DC Block required. RF/DC Ground Connection RF Output. Requires external match for optimal performance. External DC Block and supply voltage is required. Applications Information PC Board Layout PCB Material (stackup): 1 oz. Cu top layer 0.014 inch Nelco N-4000-13, εr=3.7 1 oz. Cu MIDDLE layer 1 Core Nelco N-4000-13 1 oz. Cu middle layer 2 0.014 inch Nelco N-4000-13 1 oz. Cu bottom layer Finished board thickness is 0.062±.006 50 ohm line dimensions: width = .028”, spacing = .028”. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from supplier to supplier, careful process development is recommended. Data Sheet: Rev F 04/26/12 © 2012 TriQuint Semiconductor, Inc. - 12 of 14 Disclaimer: Subject to change without notice ® Connecting the Digital World to the Global Network TQP7M9103 1W High Linearity Amplifier Mechanical Information Package Information and Dimensions This package is lead-free/RoHScompliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260 °C reflow temperature) and lead (maximum 245 °C reflow temperature) soldering processes. 7M9103 The component will be marked with a “7M9103” designator with an alphanumeric lot code on the top surface of package. Mounting Configuration All dimensions are in millimeters (inches). Angles are in degrees. Notes: 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. RF trace width depends upon the PC board material and construction. 4. Use 1 oz. Copper minimum. Data Sheet: Rev F 04/26/12 © 2012 TriQuint Semiconductor, Inc. - 13 of 14 Disclaimer: Subject to change without notice ® Connecting the Digital World to the Global Network TQP7M9103 1W High Linearity Amplifier Product Compliance Information ESD Information Solderability Compatible with the latest version of J-STD-020, Lead free solder, 260° ESD Rating: Value: Test: Standard: Class 2 ≥ 2000 V and < 4000 V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV ≥ 2000 V min Charged Device Model (CDM) JEDEC Standard JESD22-C101 This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: • Lead Free • Halogen Free (Chlorine, Bromine) • Antimony Free • TBBP-A (C15H12Br402) Free • PFOS Free • SVHC Free MSL Rating Level 3 at +260 °C convection reflow The part is rated Moisture Sensitivity Level 3 at 260°C per JEDEC standard IPC/JEDEC J-STD-020. Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: [email protected] Tel: Fax: +1.503.615.9000 +1.503.615.8902 For technical questions and application information: Email: [email protected] Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Data Sheet: Rev F 04/26/12 © 2012 TriQuint Semiconductor, Inc. - 14 of 14 Disclaimer: Subject to change without notice ® Connecting the Digital World to the Global Network