WJCI AP603

AP603
High Dynamic Range 7W 28V HBT Amplifier
Product Features
Product Description
• 800 – 2200 MHz
• +38.5 dBm P1dB
• -50 dBc ACLR @ 1W PAVG
• -51 dBc IMD3 @ 1W PEP
• 15% Efficiency @ 1W PAVG
Functional Diagram
The AP603 is a high dynamic range power amplifier in a
lead-free/RoHS-compliant 5x6mm power DFN SMT
package. The single stage amplifier has excellent backoff
linearity, while being able to achieve high performance for
800-2200 MHz applications with up to +38.5 dBm of
compressed 1dB power.
The AP603 uses a high reliability, high voltage
InGaP/GaAs HBT process technology.
The device
• Internal Temp Compensation
incorporates proprietary bias circuitry to compensate for
• Capable of handling 7:1 VSWR @ variations in linearity and current draw over temperature.
The module does not require any negative bias voltage; an
28 Vcc, 2.14 GHz, 5.5W CW Pout internal active bias allows the AP603 to operate directly off
a commonly used high voltage supply (typically +24 to
• Lead-free/RoHS-compliant
+32V). An added feature allows the quiescent bias to be
5x6 mm power DFN package
adjusted externally to meet specific system requirements.
• Internal Active Bias
• Mobile Infrastructure
• High Power Amplifier (HPA)
The AP603 is targeted for use as a pre-driver and driver
stage amplifier in wireless infrastructure where high
linearity and high efficiency is required. This combination
makes the device an excellent candidate for next generation
multi-carrier 3G mobile infrastructure.
-40
IMD3 (dBc)
Applications
IMD3 vs. Output Power vs. Icq
CW 2-tone signal, 2140 MHz, ∆f = 1 MHz, Vcc = 28V, 25 ˚C
-30
-50
-60
80 mA
160 mA
260 mA
-70
-80
26
28
30
32
34
36
Output Power, PEP (dBm)
Specifications
Typical Performance
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB
@ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 160 mA
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB
@ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 160 mA
Parameter
Operational Bandwidth
Test Frequency
Output Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
IMD3 @ +30 dBm PEP
PIN_VPD Current, Ipd
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
Units Min
MHz
MHz
dBm
dB
dB
dB
dBc
dBc
mA
mA
%
dBm
mA
V
V
Typ
800
2140
+30
11.8
10
8.2
-50
-51
4
246
14.6
+38.2
160
+5
+28
Absolute Maximum Rating
Parameter
Rating
Storage Temperature, Tstg
Junction Temperature, TJ
-55 to +125 ºC
RF Input Power (CW tone), Pin
Breakdown Voltage C-B, BVCBO
Breakdown Voltage C-E, BVCEO
Quiescent Bias Current, ICQ
Power Dissipation, PDISS
Input P6dB
80 V @ 0.1 mA
51 V @ 0.1 mA
320 mA
9.5 W
For 106 hours MTTF
192 ºC
Max
Parameter
2200
Test Frequency
Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
IMD3 @ +30 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
Units
MHz
dBm
dB
dB
dB
dBc
dBc
mA
%
dBm
mA
V
V
Typical
940
+30
17
11
5.5
-52
-52
217
16.6
+38.5
1960
+30
13
13
7.5
-49
-52
230
15.5
+38.5
160
+5
+28
2140
+30
11.8
10
8.2
-50
-51
246
14.6
+38.2
Notes:
1. The reference designs shown in this datasheet have the device optimized for WCDMA ACLR
performance at +25° C. Biasing for the amplifier is suggested at Vcc = +28V and Icq = 160 mA to
achieve the best tradeoff in terms of efficiency and linearity. Increasing Icq will improve upon the
device linearity (IMD3 and ACLR), but will decrease the efficiency performance slightly. More
information is given in the other parts of this datasheet.
2. The AP603 evaluation board has been tested for ruggedness to be capable of handling:
7:1 VSWR @ +28 Vcc, 2140 MHz, 5.5W CW Pout,
5:1 VSWR @ +30 Vcc, 2140 MHz, 5.5W CW Pout,
3:1 VSWR @ +32 Vcc, 2140 MHz, 5.5W CW Pout.
Ordering Information
Part No.
Description
AP603-F
AP603-PCB900
AP603-PCB1960
AP603-PCB2140
High Dynamic Range 28V 7W HBT Amplifier
920-960 MHz Evaluation board
1930-1990 MHz Evaluation board
2110-2170 MHz Evaluation board
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 1 of 14 May 2007 ver 1
AP603
High Dynamic Range 7W 28V HBT Amplifier
Typical Device Data
S-Parameters (VCC = +28 V, VPD = VBIAS = 5 V, ICQ = 160 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads)
0.8
0
2.
2.
0
6
0.
Swp Max
3.00001GHz
4
0.
3.
0
4
25
0.
30
3.
0
0
4.
0
4.
5.0
0.2
20
5.0
0.2
10.0
10.0
5
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.4
0.2
0
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
10
0.4
0
0.2
15
-10.0
.4
0
2.
-0
-
Swp Min
3e-005GHz
-1.0
Swp Min
3e-005GHz
-0.8
-0
.6
-2
.0
.4
-1.0
2.5
-0.8
2
-0
.6
1
1.5
Frequency (GHz)
.0
0.5
-3
0
-3
-4
.0
-5.
0
-0
-10
2
-0.
.0
2
-0.
-5
-4
.0
-5.
0
0
-10.0
Gain (dB)
1.0
1.0
0.8
DB(GMax())
Swp Max
3.00001GHz
6
0.
DB(|S(2,1)|)
35
S22
S11
Gain / Maximum Stable Gain
40
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency,
it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the marked red line.
The impedance plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increments.
Freq (MHz)
50
100
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
-2.63
-1.78
-0.92
-0.64
-0.53
-0.52
-0.46
-0.44
-0.38
-0.39
-0.48
-0.59
-0.73
-0.97
-1.21
-1.28
-1.18
-169.40
-170.62
-173.99
-177.96
-178.87
-178.84
-177.79
-177.25
-176.83
-177.55
-179.87
175.92
170.02
163.30
157.14
153.30
152.21
25.54
23.33
19.08
13.40
9.88
7.52
5.42
4.01
2.93
2.22
1.77
1.54
1.41
1.23
0.75
0.03
-0.89
146.01
132.51
109.79
93.01
85.15
79.52
74.40
69.71
64.99
59.81
52.82
44.04
33.03
19.79
3.56
-14.33
-34.56
-40.50
-38.11
-36.04
-35.59
-35.72
-35.90
-35.68
-35.62
-35.48
-35.13
-34.75
-34.21
-33.63
-33.13
-32.89
-33.04
-33.44
55.97
39.21
21.60
9.15
3.39
6.93
5.88
3.23
1.79
-0.56
-4.12
-10.23
-18.12
-29.67
-43.94
-61.10
-81.90
-1.32
-3.07
-5.00
-6.06
-5.82
-5.38
-4.77
-4.16
-3.62
-3.12
-2.63
-2.19
-1.74
-1.28
-0.90
-0.57
-0.45
-45.78
-67.75
-104.04
-129.02
-136.33
-138.25
-139.20
-139.65
-139.95
-140.63
-142.14
-144.85
-149.24
-155.12
-162.55
-170.87
-178.70
Device S-parameters are available for download off of the website at: http://www.wj.com
Load-Pull Data
Test condition: Output Power = 29.5 dBm, VCC = +28 V, ICQ = 160 mA, ZS = 50 Ω
Test signal = W-CDMA (PAR=8.6dB @ 0.01% Probability), 2140 MHz
The reference plane is at the AP603-PCB2140 eval board’s SMA connectors.
The plots are shown to detail the optimization of the ACLR performance.
Gain Load-Pull
GAIN Max=13.08 dB at 76.9-j37.0
ACLR Load-Pull
ACPR1LO Min=-50.98 dBc at 57.9-j2.6
PAE Load-Pull
P.A.EFF Max=16.98 % at 34.4-j49.7
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 2 of 14 May 2007 ver 1
AP603
High Dynamic Range 7W 28V HBT Amplifier
Application Circuit PC Board Layout
Baseplate Configuration
Notes:
1. Please note that for reliable operation, the evaluation board will have to be mounted to a much larger
heat sink during operation and in laboratory environments to dissipate the power consumed by the
device. The use of a convection fan is also recommended in laboratory environments.
2. The area around the module underneath the PCB should not contain any soldermask in order to
maintain good RF grounding.
3. For proper and safe operation in the laboratory, the power-on sequencing is recommended.
PCB Material: 0.0147” Rogers Ultralam 2000, single layer, 1 oz Cu,
εr = 2.45, Microstrip line details: width = .042”, spacing = .050”
Evaluation Board Bias Procedure
The following bias procedure is recommended to ensure proper functionality of AP603 in a laboratory environment. The sequencing is not
required in the final system application.
Bias.
Vcc
Vbias
Vpd
Voltage (V)
+28
+5
+5
Turn-on Sequence:
1.
2.
3.
4.
5.
Attach input and output loads onto the evaluation board.
Turn on power supply Vcc = +28V.
Turn on power supply Vbias = +5V. At this point, the only current drawn by the device is leakage current (< 25μA).
Turn on power supply Vpd = +5V. Power supply Vcc should now be drawing typical Icq = 160mA.
Turn on RF power.
Turn-off Sequence:
1.
2.
3.
4.
Notes:
1.
2.
3.
Turn off RF power.
Turn off power supply Vpd = +5V.
Turn off power supply Vbias = +5V.
Turn off power supply Vcc = +28V.
Icq can be adjusted with the resistor R2 from the Vpd (+5V) supply and the PIN_VPD (pin14) of the amplifier. Increasing R2
results in a lower Icq. Icq should not be increased above 320mA.
Vpd is used as a reference for the internal active bias circuitry. It can be used to turn on/off the amplifier. Ipd depends on the Icq
quiescent current setting. Ipd can be up to 8mA at a quiescent current setting of 320mA.
Vbias should be maintained fixed at +5V. Ibias will change based on RF input power level. It can be up to 8mA on the AP603.
Ibias vs Output Power
8
6
6
Ibias (mA)
Ipd (mA)
Ipd vs Icq
8
4
2
0
4
2
0
0
100
200
Icq Setting (mA)
300
400
22
24
26
28
30
32
Output Average Power (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 3 of 14 May 2007 ver 1
AP603
High Dynamic Range 7W 28V HBT Amplifier
Frequency
W-CDMA Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
IMD3 @ +30 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
880 MHz
+30 dBm
18 dB
11 dB
7.5 dB
-52 dBc
-52 dBc
220 mA
16.5 %
+38.5 dBm
160 mA
+5 V
+28 V
C28
L24
VCC
GND
VBIAS
Typical WCDMA Performance at 25 °C
at a channel power of +30 dBm
VPD
869-894 MHz Reference Design
C7
1000pF
C28
6.8 nH
See note 5
6.8 pF
See note 4
L24
2.2 nH
See note 3
C31
3.3 pF
See note 6
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of L24 is placed at 0.090” (3.5° @ 880 MHz) from the center of C5.
4. The center of C28 is placed at 0.220” (8.4° @ 880 MHz) from the edge of the AP603 (U1).
5. The center of L4 is placed at 0.200” (7.7° @ 880 MHz) from the edge of the AP603 (U1).
6. The center of C31 is placed at 0.360” (13.8° @ 880 MHz) from the center of L4.
7. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ.
8. The main RF trace is cut at component C28 and L4 for this particular reference design.
L4
C31
869-894 MHz Application Circuit Performance Plots
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
Gain vs. Output Power vs. Frequency
17
16
869 MHz
-10
-15
S11
-20
880 MHz
S22
894 MHz
32
34
36
38
-25
0.75
40
ACLR1 vs. Output Power vs. Frequency
0.9
894 MHz
-50
-55
20
10
14
18
22
Average Output Power (dBm)
32
34
38
Efficiency vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 160 mA, 25 ˚C
-60
-65
IMD3U
IMD5
-75
30
30
25
IMD3L
-65
26
Output Power (dBm)
-70
-60
28
30
0.95
-55
880 MHz
26
894 MHz
40
IMD vs. Output Power
IMD (dBc)
ACLR1 (dBc)
0.85
-50
869 MHz
24
880 MHz
CW 2-tone signal, 880 MHz, ∆f = 1 MHz, 28V, 160 mA Icq, 25 ˚C
WCDMA, Vcc = 28V, Icq = 160 mA, 25 ˚C
-40
22
50
Frequency (GHz)
Output Power (dBm)
-45
869 MHz
0
0.8
Collector Efficiency (%)
30
60
Collector Efficiency (%)
-5
S11, S22 (dB)
Gain (dB)
18
14
CW tone, Vcc = 28V, Icq = 160 mA, 25 ˚C
Vcc = 28V, Icq = 160 mA, 25 ˚C
0
15
Efficiency vs. Output Power vs. Frequency
S11, S22 vs. Frequency
CW tone, Vcc = 28V, Icq = 160 mA, 25 ˚C
19
869 MHz
20
880 MHz
894 MHz
15
10
5
0
26
28
30
32
34
36
Output Power, PEP (dBm)
22
24
26
28
30
32
Average Output Power (dBm)
Unconditionally stable circuit version of this application circuit is available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 4 of 14 May 2007 ver 1
AP603
High Dynamic Range 7W 28V HBT Amplifier
Frequency
W-CDMA Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
IMD3 @ +30 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
L3
940 MHz
+30 dBm
17 dB
11 dB
5.5 dB
-52 dBc
-52 dBc
217 mA
16.6 %
+38.5 dBm
160 mA
+5 V
+28 V
VCC
GND
VBIAS
Typical WCDMA Performance at 25 °C
at a channel power of +30 dBm
VPD
920-960 MHz Application Circuit (AP603-PCB900)
C7
1000pF
1.8 Ohm
See note 5
5.6pF
See note 3
See note 4
See note 6
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of C24 is placed at 0.245” (10.0° @ 940 MHz) from the center of C5.
4. The center of C5 is placed at .060” (2.5° @ 940 MHz) from the edge of the AP603 (U1).
5. The center of L4 is placed at 0.170” (7.0° @ 940 MHz) from the edge of the AP603 (U1). L4
is required to be an AVX 0805 type.
6. The center of C25 is placed at 0.480” (19.7° @ 940 MHz) from the center of L4.
7. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ.
8. The main RF trace is cut at component L3 and L4 for this particular reference design.
C5
920-960 MHz Application Circuit Performance Plots
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
Gain vs. Output Power vs. Frequency
-5
16
15
920 MHz
S11
36
38
0.8
40
0.85
ACLR1 vs. Output Power vs. Frequency
0.95
1
1.05
960 MHz
-50
-55
14
18
22
30
Average Output Power (dBm)
32
30
34
38
Efficiency vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 160 mA, 25 ˚C
25
-60
-65
IMD3L
IMD3U
IMD5
-75
-65
26
Output Power (dBm)
-70
-60
28
10
1.1
-55
940 MHz
26
20
IMD vs. Output Power
IMD (dBc)
ACLR1 (dBc)
0.9
-50
920 MHz
24
960 MHz
30
CW 2-tone signal, 940 MHz, ∆f = 1 MHz, 28V, 160 mA Icq, 25 ˚C
WCDMA, Vcc = 28V, Icq = 160 mA, 25 ˚C
-40
22
940 MHz
40
Frequency (GHz)
Output Power (dBm)
-45
920 MHz
0
-25
34
Collector Efficiency (%)
32
-15
S22
960 MHz
30
-10
-20
940 MHz
50
Collector Efficiency (%)
17
S11, S22 (dB)
Gain (dB)
0
13
CW tone, Vcc = 28V, Icq = 160 mA, 25 ˚C
Vcc = 28V, Icq = 160 mA, 25 ˚C
18
14
Efficiency vs. Output Power vs. Frequency
S11, S22 vs. Frequency
CW tone, Vcc = 28V, Icq = 160 mA, 25 ˚C
920 MHz
20
940 MHz
960 MHz
15
10
5
0
26
28
30
32
34
36
Output Power, PEP (dBm)
22
24
26
28
30
32
Average Output Power (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 5 of 14 May 2007 ver 1
AP603
High Dynamic Range 7W 28V HBT Amplifier
Frequency
W-CDMA Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
IMD3 @ +30 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
L3
1960 MHz
+30 dBm
13 dB
13 dB
7.5 dB
-49 dBc
-52 dBc
230 mA
15.5 %
+38.5 dBm
160 mA
+5 V
+28 V
C5
VCC
VPD
VBIAS
Typical WCDMA Performance at 25 °C
at a channel power of +30 dBm
GND
1930-1990 MHz Application Circuit (AP603-PCB1960)
C7
1000pF
W = .030”
L = 1.035”
L3
4.7nH
See note 3
100pF
C5
3.3pF
See note 4
C28
3.3pF
See note 5
100pF
C29
1.2pF
See note 6
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of L3 is placed at 0.115” (9.8° @ 1960 MHz) from the center of C5.
4. The center of C5 is placed at 0.100” (8.5° @ 1960 MHz) from the edge of the AP603 (U1).
5. The center of C28 is placed at 0.300” (25.6° @ 1960 MHz) from the edge of the AP603 (U1).
6. The center of C29 is placed at 0.420” (35.9° @ 1960 MHz) from the center of C28.
7. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ.
C28
1930-1990 MHz Application Circuit Performance Plots
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
Gain vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 160 mA, 25 ˚C
Vcc = 28V, Icq = 160 mA, 25 ˚C
50
S11, S22 (dB)
-5
12
11
1930 MHz
10
-10
-15
S11
-20
1960 MHz
S22
1990 MHz
-25
9
30
32
34
36
38
ACLR1 vs. Output Power vs. Frequency
1.85
1.9
1.95
2
2.05
10
22
26
1990 MHz
-50
-55
-60
-65
Average Output Power (dBm)
32
34
38
Efficiency vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 160 mA, 25 ˚C
25
1930 MHz
250
1960 MHz
1990 MHz
225
200
175
150
30
30
Output Power (dBm)
Collector Efficiency (%)
Collector Current (mA)
1960 MHz
28
20
WCDMA, Vcc = 28V, Icq = 160 mA, 25 ˚C
1930 MHz
26
1990 MHz
30
2.1
275
24
1960 MHz
Icc vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 160 mA, 25 ˚C
22
40
Frequency (GHz)
-40
-45
1930 MHz
0
1.8
40
Output Power (dBm)
ACLR1 (dBc)
Collector Efficiency (%)
0
13
Gain (dB)
Efficiency vs. Output Power vs. Frequency
S11, S22 vs. Frequency
CW tone, Vcc = 28V, Icq = 160 mA, 25 ˚C
14
1930 MHz
20
1960 MHz
1990 MHz
15
10
5
0
22
24
26
28
30
32
Average Output Power (dBm)
22
24
26
28
30
32
Average Output Power (dBm)
Unconditionally stable version of this application circuit is available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 6 of 14 May 2007 ver 1
AP603
High Dynamic Range 7W 28V HBT Amplifier
1930-1990 MHz Application Circuit Performance Plots
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
Gain vs. Output Power vs. Vcc
Efficiency vs. Output Power vs. Vcc
CW tone, Icq = 160 mA, 1960 MHz, 25 ˚C
CW tone, Icq = 160 mA, 1960 MHz, 25 ˚C
50
Collector Efficiency (%)
Gain (dB)
14
13
26 V
12
28 V
30 V
32 V
11
26 V
28 V
40
30 V
30
32 V
20
10
0
22
26
30
34
38
22
26
Output Power (dBm)
ACLR1 vs. Output Power vs. Vcc
38
WCDMA, Icq = 160 mA, 1960 MHz, 25 ˚C
25
Collector Efficiency (%)
26 V
28 V
-45
ACLR1 (dBc)
34
Efficiency vs. Output Power vs. Vcc
WCDMA, Icq = 160 mA, 1960 MHz, 25 ˚C
-40
30 V
-50
32 V
-55
-60
-65
26 V
28 V
20
30 V
15
32 V
10
5
0
22
24
26
28
30
32
22
Average Output Power (dBm)
OIP3 vs. Output Power vs. Vcc
50
-40
28 V
-45
30 V
28
30
45
26 V
IMD5 vs. Output Power vs. Vcc
28 V
30 V
26 V
26 V
28 V
-55
32 V
-50
32
CW 2-tone signal, 1960 MHz, ∆f = 1 MHz, Icq = 160 mA, 25 ˚C
-50
IMD5 (dBc)
IMD3 (dBc)
-35
35
26
Average Output Power (dBm)
CW 2-tone signal, 1960 MHz, ∆f = 1 MHz, Icq = 160 mA, 25 ˚C
55
40
24
IMD3 vs. Output Power vs. Vcc
CW 2-tone signal, 1960 MHz, ∆f = 1 MHz, Icq = 160 mA, 25 ˚C
OIP3 (dBm)
30
Output Power (dBm)
-55
30 V
-60
32 V
-65
-70
-60
32 V
-65
30
26
28
30
32
Output Power, PEP (dBm)
34
36
-75
26
28
30
32
34
36
Output Power, PEP (dBm)
26
28
30
32
34
36
Output Power, PEP (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 7 of 14 May 2007 ver 1
AP603
High Dynamic Range 7W 28V HBT Amplifier
1930-1990 MHz Application Note: Changing Icq Biasing Configurations
The AP603 can be configured to be operated with lower bias current by varying the bias-adjust resistor – R2. The
recommended circuit configurations shown previously in this datasheet have the device operating with a 160 mA as the
quiescent current (ICQ). This biasing level represents the best tradeoff in terms of linearity and efficiency. Lowering ICQ will
improve upon the efficiency of the device, but degraded linearity. Increasing ICQ has nominal improvement upon the linearity,
but will degrade the device’s efficiency. Measured data shown in the plots below represents the AP603 measured and
configured for 1.96 GHz applications. It is expected that variation of the bias current for other frequency applications will
produce similar performance results.
Thermal Rise vs. Output Power vs. Icq
20 mA
80
40 mA
80 mA
60
C7
120 mA
1000pF
160 mA
40
200 mA
20
W = .030”
L = 1.035”
260 mA
L3
18
20
22
24
-50
-55
24
26
40 mA
120 mA
200 mA
320 mA
28
30
WCDMA, Vcc = 28V, 1960 MHz, 25 ˚C
200
20 mA
80 mA
160 mA
260 mA
100
0
32
22
24
26
40 mA
120 mA
200 mA
320 mA
28
30
Gain vs. Output Power vs. Icq
20 mA
40 mA
80 mA
120 mA
160 mA
200 mA
260 mA
320 mA
10
5
0
22
24
20 mA
40 mA
80 mA
120 mA
160 mA
200 mA
260 mA
320 mA
34
26
22
10
38
14
Output Power (dBm)
20 mA
40 mA
80 mA
120 mA
160 mA
200 mA
260 mA
320 mA
18
OIP3 vs. Output Power vs. Icq
22
40
30
20 mA
40 mA
80 mA
120 mA
160 mA
200 mA
260 mA
320 mA
20
10
0
26
22
26
45
40
38
CW Two-tone signal, 1960 MHz, ∆f = 1 MHz, Vcc = 28V, 25 ˚C
20 mA
40 mA
80 mA
120 mA
160 mA
200 mA
260 mA
320 mA
-20
-30
-30
IMD5 (dBc)
IMD3 (dBc)
50
34
IMD5 vs. Output Power vs. Icq
CW Two-tone signal, 1960 MHz, ∆f = 1 MHz, Vcc = 28V, 25 ˚C
-20
30
Output Power (dBm)
IMD3 vs. Output Power vs. Icq
CW Two-tone signal, 1960 MHz, ∆f = 1 MHz, Vcc = 28V, 25 ˚C
32
50
Input Power (dBm)
55
30
CW tone, Vcc = 28V, 1960 MHz, 25 ˚C
34
30
28
Efficiency vs. Output Power vs. Icq
Collector Efficiency (%)
11
Output Power (dBm)
12
26
Average Output Power (dBm)
CW tone, Vcc = 28V, 1960 MHz, 25 ˚C
13
30
15
32
38
26
20
Output Power vs. Input Power vs. Icq
CW tone, Vcc = 28V, 1960 MHz, 25 ˚C
22
25
Average Output Power (dBm)
14
9
100pF
Efficiency vs. Output Power vs. Icq
300
Average Output Power (dBm)
10
C29
1.2pF
C28
3.3pF
32
Collector Efficiency (%)
Collector Current (mA)
ACLR1 (dBc)
30
WCDMA, Vcc = 28V, 1960 MHz, 25 ˚C
-45
22
Gain (dB)
28
400
-40
OIP3 (dBm)
26
Icc vs. Output Power vs. Icq
WCDMA, Vcc = 28V, 1960 MHz, 25 ˚C
-65
C5
3.3pF
Output Power (dBm)
ACLR1 vs. Output Power vs. Icq
-60
4.7 nH
100pF
320 mA
0
-35
20 mA
80 mA
160 mA
260 mA
VPD
Vcc = 28V
100
VCC
PIN_VPD
(V)
2.46
2.52
2.61
2.68
2.74
2.80
2.89
2.98
VBIAS
VPD
(V)
5
5
5
5
5
5
5
5
GND
R2
(Ω)
4.32k
2.33k
1.24k
852
649
521
398
313
Thermal Rise (˚C)
Icq
(mA)
20
40
80
120
160
200
260
320
-40
20 mA
40 mA
80 mA
120 mA
160 mA
200 mA
260 mA
320 mA
-40
-50
-60
-50
35
30
26
28
20 mA
40 mA
80 mA
120 mA
160 mA
200 mA
260 mA
320 mA
30
32
Output Power, PEP (dBm)
34
36
-70
-60
-80
26
28
30
32
34
36
Output Power, PEP (dBm)
26
28
30
32
34
36
Output Power, PEP (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 8 of 14 May 2007 ver 1
AP603
High Dynamic Range 7W 28V HBT Amplifier
Frequency
Total Output Power
Power Gain
Input Return Loss
Output Return Loss
IMD3 @ +30 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
2015 MHz
+30 dBm
12.3 dB
11 dB
14 dB
-48 dBc
230 mA
15.5 %
+38.2 dBm
160 mA
+5 V
+28 V
VCC
GND
VBIAS
Typical Performance at 25 °C at an
output power of +30 dBm
VPD
2010-2025 MHz Application Circuit
C7
1000pF
W= 0.030”
L = 1.000”
5.6pF
See note 4
1.8pF
See note 3
C25
0.8pF
See note 5
C30
3.3pF
See note 7
See note 6
0.8pF
See note 8
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of C22 is placed at 0.185” (16.3° @ 2015 MHz) from the center of C1.
4. The center of C1 is placed at 0.705” (61.9° @ 2015 MHz) from the center of C25.
5. The center of C25 is placed at 0.140” (12.3° @ 2015 MHz) from the center of C5.
6. The center of C5 is placed at 0.125” (11.0° @ 2015 MHz) from the edge of the AP603 (U1).
7. The center of C30 is placed at 0.250” (41.2° @ 2015 MHz) from the edge of the AP603 (U1).
8. The center of C19 is placed at 0.490” (43.0° @ 2015 MHz) from the center of C23.
9. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ.
Gain vs. Output Power vs. Frequency
S11, S22 vs. Frequency
CW tone, Vcc = 28V, Icq = 160 mA, 25 ˚C
Vcc = 28V, Icq = 160 mA, 25 ˚C
0
12
-5
11
10
2000 MHz
2015 MHz
2025 MHz
8
30
-10
-15
S11
-20
32
34
36
38
-25
1.96
40
S22
2
2.02
2.04
2.06
2.08
ACLR1 vs. Output Power vs. Icq
ACLR vs. Output Power vs. Icq
3 carrier TD-SCDMA, Vcc = 28V, Icq = 160 mA, 2015 MHz, 25 ˚C
-40
-45
-55
PAR = 9.6 dB @ 0.01% prob
IQ Mod Filter : 2.1 MHz
Sample clock: 32 MHz
BW = 1.28 MHz
-60
22
23
24
25
Average Output Power (dBm)
10
22
26
26
34
38
3 carrier TD-SCDMA, Vcc = 28V, Icq = 160 mA, 25 ˚C
-50
-55
ACLR1
ACLR2
27
30
10
-65
21
20
Efficiency vs. Output Power vs. Frequency
PAR = 9.6 dB @ 0.01% prob
IQ Mod Filter : 2.1 MHz
Sample clock: 32 MHz
BW = 1.28 MHz
-60
-65
20
2025 MHz
30
Output Power (dBm)
3 carrier TD-SCDMA, Vcc = 28V, 2015 MHz, 25 ˚C
ACLR (dBc)
ACLR1 (dBc)
-50
2010 MHz
40
Frequency (GHz)
140 mA
160 mA
180 mA
200 mA
-45
2000 MHz
0
1.98
Output Power (dBm)
-40
CW tone, Vcc = 28V, Icq = 160 mA, 25 ˚C
Collector Efficiency (%)
9
Efficiency vs. Output Power vs. Frequency
50
Collector Efficiency (%)
13
S11, S22 (dB)
Gain (dB)
2010-2025 MHz Application Circuit Performance Plots
2010 MHz
8
2015 MHz
2025 MHz
6
4
PAR = 9.6 dB @ 0.01% prob
IQ Mod Filter : 2.1 MHz
Sample clock: 32 MHz
BW = 1.28 MHz
2
0
20
21
22
23
24
25
26
27
Average Output Power (dBm)
20
21
22
23
24
25
26
27
Average Output Power (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 9 of 14 May 2007 ver 1
AP603
High Dynamic Range 7W 28V HBT Amplifier
Frequency
W-CDMA Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
IMD3 @ +30 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
2140 MHz
+30 dBm
11.8 dB
10 dB
8.2 dB
-50 dBc
-51 dBc
246 mA
14.6 %
+38.2 dBm
160 mA
+5 V
+28 V
VCC
GND
VBIAS
Typical WCDMA Performance at 25 °C
at a channel power of +30 dBm
VPD
2110-2170 MHz Application Circuit (AP603-PCB2140)
C7
1000pF
W = 0.030”
L = 0.980”
See note 4
0.8pF
See note 3
See note 6
See note 5
See note 7
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of C22 is placed at 0.185” (17.3° @ 2140 MHz) from the center of C1.
4. The center of C1 is placed at 0.860” (80.2° @ 2140 MHz) from the center of C5.
5. The center of C5 is placed at 0.085” (7.9° @ 2140 MHz) from the edge of the AP603 (U1).
6. The center of C23 is placed at 0.245” (22.9° @ 2140 MHz) from the edge of the AP603 (U1).
7. The center of C19 is placed at 0.475” (44.3° @ 2140 MHz) from the center of C23.
8. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ.
2110-2170 MHz Application Circuit Performance Plots
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
50
Collector Efficiency (%)
0
12
-5
S11, S22 (dB)
11
10
9
2110 MHz
8
2170 MHz
30
32
-15
S11
-20
2140 MHz
7
-10
S22
-25
34
36
38
2.05
2.1
2.15
2.2
2.25
Collector Current (mA)
2140 MHz
2170 MHz
-50
-55
-60
22
26
30
Average Output Power (dBm)
32
30
34
38
Output Power (dBm)
Efficiency vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 160 mA, 25 ˚C
25
2110 MHz
275
2140 MHz
250
2170 MHz
225
200
175
150
-65
28
10
2.3
300
2110 MHz
26
20
WCDMA, Vcc = 28V, Icq = 160 mA, 25 ˚C
WCDMA, Vcc = 28V, Icq = 160 mA, 25 ˚C
24
2170 MHz
30
Icc vs. Output Power vs. Frequency
ACLR1 vs. Output Power vs. Frequency
-40
22
2140 MHz
40
Frequency (GHz)
Output Power (dBm)
-45
2110 MHz
0
2
40
Collector Efficiency (%)
Gain (dB)
CW tone, Vcc = 28V, Icq = 160 mA, 25 ˚C
Vcc = 28V, Icq = 160 mA, 25 ˚C
CW tone, Vcc = 28V, Icq = 160 mA, 25 ˚C
ACLR1 (dBc)
Efficiency vs. Output Power vs. Frequency
S11, S22 vs. Frequency
Gain vs. Output Power vs. Frequency
2110 MHz
20
2140 MHz
2170 MHz
15
10
5
0
22
24
26
28
30
32
Average Output Power (dBm)
22
24
26
28
30
32
Average Output Power (dBm)
Unconditionally stable circuit version of this application circuit is available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 10 of 14 May 2007 ver 1
AP603
High Dynamic Range 7W 28V HBT Amplifier
2110-2170 MHz Application Circuit Performance Plots
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
Gain vs. Output Power vs. Temperature
Icc vs. Output Power vs. Temperature
CW tone, Vcc = 28V, Icq = 160 mA, 2140 MHz
11
10
25 ˚C
85 ˚C
9
50
-40 ˚C
500
Collector Efficiency (%)
Collector Current (mA)
Gain (dB)
12
-40 ˚C
25 ˚C
85 ˚C
400
300
200
100
22
26
30
34
22
AM-PM vs. Input Power
26
30
34
8
25 ˚C
85 ˚C
-45
-50
24
26
28
22
24
Input Power (dBm)
Gain vs. Frequency vs. Temperature
26
28
30
10
-40 ˚C
22
28 V
30 V
-50
32 V
-55
-65
2150
Gain vs. Output Power vs. Vcc
30 V
15
32 V
10
5
24
26
28
30
32
22
ACLR_M
ACLR1_U
ACLR2_U
-50
26 V
28 V
40
30 V
30
32 V
20
10
0
22
38
Output Power (dBm)
24
26
28
30
32
22
OIP3 vs. Output Power vs. Vcc
IMD3 vs. Output Power vs. Vcc
CW 2-tone signal, 2140 MHz, ∆f = 1 MHz, Icq = 160mA, 25 ˚C
-40
26 V
28 V
30 V
26 V
28 V
30 V
-50
32 V
-60
-70
32 V
32 V
26
-50
-70
30 V
IMD5 (dBc)
-40
IMD3 (dBc)
55
28 V
38
CW 2-tone signal, 2140 MHz, ∆f = 1 MHz, Icq = 160mA, 25 ˚C
-30
-60
34
IMD5 vs. Output Power vs. Vcc
CW 2-tone signal, 2140 MHz, ∆f = 1 MHz, Icq = 160mA, 25 ˚C
-30
26 V
30
Output Power (dBm)
60
35
26
Total Average Output Power (dBm)
50
32
CW tone, Icq = 160 mA, 2140 MHz, 25 ˚C
Collector Efficiency (%)
ACLR (dBc)
34
30
Efficiency vs. Output Power vs. Vcc
-60
10
28
50
ACLR1_L
-40
26
Average Output Power (dBm)
ACLR2_L
32 V
11
40
24
WCDMA, 101 Config, Vcc = 28V, Icq = 160 mA, 25 ˚C
-30
12
32
28 V
20
2-Carrier WCDMA ACLR vs. Output Power
CW tone, Icq = 160 mA, 2140 MHz, 25 ˚C
30 V
30
26 V
Average Output Power (dBm)
13
28
0
22
2170
26
WCDMA, Icq = 160 mA, 2140 MHz, 25 ˚C
26 V
Frequency (MHz)
45
24
Efficiency vs. Output Power vs. Vcc
85 ˚C
Gain (dB)
5
Average Output Power (dBm)
-60
25 ˚C
30
10
32
Collector Efficiency (%)
ACLR1 (dBc)
11
26
85 ˚C
15
25
-45
22
25 ˚C
WCDMA, Icq = 160 mA, 2140 MHz, 25 ˚C
-40
28 V
20
ACLR1 vs. Output Power vs. Vcc
WCDMA, Vcc = 28V, Icq = 160 mA, +30 dBm Pout
12
38
-40 ˚C
Average Output Power (dBm)
13
34
0
-60
26 V
30
WCDMA, Vcc = 28V, Icq = 160 mA, 2140 MHz
-55
2130
26
Efficiency vs. Output Power vs. Temperature
Collector Efficiency (%)
ACLR1 (dBc)
Phase
9
7
OIP3 (dBm)
22
25
-40
10
8
2110
10
WCDMA, Vcc = 28V, Icq = 160 mA, 2140 MHz
Gain
9
20
Output Power (dBm)
-40 ˚C
22
85 ˚C
30
38
-35
20
25 ˚C
ACLR1 vs. Output Power vs. Temperature
2140 MHz, Vcc = 28V, Icq = 160 mA, 25 ˚C
18
40
Output Power (dBm)
12
11
-40 ˚C
0
38
Output Power (dBm)
Gain (dB) / Phase (deg)
CW tone, Vcc = 28V, Icq = 160 mA, 2140 MHz
600
13
Gain (dB)
Efficiency vs. Output Power vs. Temperature
CW tone, Vcc = 28V, Icq = 160 mA, 2140 MHz
14
-80
28
30
32
Output Power, PEP (dBm)
34
36
-80
26
28
30
32
34
36
Output Power, PEP (dBm)
26
28
30
32
34
36
Output Power, PEP (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 11 of 14 May 2007 ver 1
AP603
High Dynamic Range 7W 28V HBT Amplifier
2110-2170 MHz Application Note: Changing Icq Biasing Configurations
The AP603 can be configured to be operated with lower bias current by varying the bias-adjust resistor – R2. The
recommended circuit configurations shown previously in this datasheet have the device operating with a 160 mA as the
quiescent current (ICQ). This biasing level represents the best tradeoff in terms of linearity and efficiency. Lowering ICQ will
improve upon the efficiency of the device, but degraded linearity. Increasing ICQ has nominal improvement upon the linearity,
but will degrade the device’s efficiency. Measured data shown in the plots below represents the AP603 measured and
configured for 2.14 GHz applications. It is expected that variation of the bias current for other frequency applications will
produce similar performance results.
Vcc = 28V
100
20 mA
80
40 mA
80 mA
C7
60
120 mA
20
260 mA
320 mA
0.8pF
0
18
20
22
24
28
30
32
Efficiency vs. Output Power vs. Icq
Icc vs. Output Power vs. Icq
WCDMA, Vcc = 28V, 2140 MHz, 25 ˚C
WCDMA, Vcc = 28V, 2140 MHz, 25 ˚C
-40
-50
-60
22
40 mA
200 mA
24
26
80 mA
260 mA
120 mA
320 mA
28
30
Collector Efficiency (%)
Collector Current (mA)
400
-70
300
200
20 mA
80 mA
160 mA
260 mA
100
0
32
22
24
26
28
40 mA
120 mA
200 mA
320 mA
30
20
15
40 mA
80 mA
120 mA
160 mA
200 mA
260 mA
320 mA
5
0
22
24
26
28
30
Average Output Power (dBm)
Average Output Power (dBm)
Gain vs. Output Power vs. Icq
Output Power vs. Input Power vs. Icq
Efficiency vs. Output Power vs. Icq
CW tone, Vcc = 28V, 2140 MHz, 25 ˚C
CW tone, Vcc = 28V, 2140 MHz, 25 ˚C
80 mA
120 mA
160 mA
200 mA
260 mA
320 mA
11
10
9
34
30
26
22
22
26
30
34
12
38
16
20 mA
40 mA
80 mA
120 mA
160 mA
200 mA
260 mA
320 mA
20
24
50
40
30
OIP3 vs. Output Power vs. Icq
22
Output Power, PEP (dBm)
34
40 mA
120 mA
200 mA
320 mA
36
IMD5 (dBc)
20 mA
80 mA
160 mA
260 mA
IMD3 (dBc)
45
-40
-50
-60
20 mA
80 mA
160 mA
260 mA
-70
-80
26
28
30
32
34
38
CW 2-tone signal, 2140 MHz, ∆f = 1 MHz, Vcc = 28V, 25 ˚C
-30
50
30
IMD5 vs. Output Power vs. Icq
CW 2-tone signal, 2140 MHz, ∆f = 1 MHz, Vcc = 28V, 25 ˚C
-30
32
26
Output Power (dBm)
55
30
320 mA
0
28
-20
28
200 mA
260 mA
10
-20
30
120 mA
160 mA
IMD3 vs. Output Power vs. Icq
CW 2-tone signal, 2140 MHz, ∆f = 1 MHz, Vcc = 28V, 25 ˚C
35
40 mA
80 mA
20
60
40
20 mA
Input Power (dBm)
Output Power (dBm)
32
CW tone, Vcc = 28V, 2140 MHz, 25 ˚C
Collector Efficiency (%)
40 mA
Output Power (dBm)
20 mA
12
26
20 mA
10
32
38
13
25
Average Output Power (dBm)
14
OIP3 (dBm)
26
Output Power (dBm)
WCDMA, Vcc = 28V, 2140 MHz, 25 ˚C
ACLR1 (dBc)
W = 0.030”
L = 0.980”
200 mA
ACLR1 vs. Output Power vs. Icq
Gain (dB)
1000pF
160 mA
40
-30
20 mA
160 mA
VCC
Thermal Rise vs. Output Power vs. Icq
VPD
PIN_VPD
(V)
2.46
2.52
2.61
2.68
2.74
2.80
2.89
2.98
VBIAS
VPD
(V)
5
5
5
5
5
5
5
5
GND
R2
(Ω)
4.32k
2.33k
1.24k
852
649
521
398
313
Thermal Rise (˚C)
Icq
(mA)
20
40
80
120
160
200
260
320
40 mA
120 mA
200 mA
320 mA
34
40 mA
80 mA
120 mA
160 mA
200 mA
260 mA
320 mA
-40
-50
-60
-70
-80
36
Output Power, PEP (dBm)
20 mA
26
28
30
32
34
36
Output Power, PEP (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 12 of 14 May 2007 ver 1
AP603
High Dynamic Range 7W 28V HBT Amplifier
2110-2170 MHz High Efficiency Reference Design
Frequency
W-CDMA Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
2140 MHz
+32 dBm
11.5 dB
20 dB
11 dB
-34 dBc
170 mA
32.5 %
+38.5 dBm
40 mA
+5 V
+28 V
VCC
GND
VBIAS
Typical WCDMA Performance at 25 °C
at a channel power of +32 dBm
VPD
Targeted for Linearized Power Amplifiers
2.3 kΩ
C7
W = 0.030”
L = 0.980”
1000pF
C21
See note 4
0.8pF
See note 3
C28
3.6 pF
See note 6
3.6 pF
See note 5
C29
0.4 pF
See note 7
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of C22 is placed at 0.185” (17.3° @ 2140 MHz) from the center of C1.
4. The center of C1 is placed at 0.875” (81.6° @ 2140 MHz) from the center of C5.
5. The center of C5 is placed at 0.070” (6.5° @ 2140 MHz) from the edge of the AP603 (U1).
6. The center of C28 is placed at 0.190” (17.7° @ 2140 MHz) from the edge of the AP603 (U1).
7. The center of C29 is placed at 0.300” (28.0° @ 2140 MHz) from the center of C28.
8. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ.
2110-2170 MHz High Efficiency Application Circuit Performance Plots
DPD Correction vs ACLR vs. Output Power
DPD Correction vs ACLR vs. Output Power
WCDMA, 2140 MHz, Vcc = 28V, Icq = 40 mA, 25 ˚C
-40
Uncorrected, Upper / Lower
-50
WCDMA, 2140 MHz, Vcc = 28V, Icq = 40 mA, 25 ˚C
-30
Single-carrier WCDMA TM 1+64 DPCH,
69% Clipping, PAR = 8.6 dB @ 0.01% CCDF
-40
ACLR (dBc)
Single-carrier WCDMA TM 1+64 DPCH,
No Clipping, PAR = 9.5 dB @ 0.01% CCDF
-60
Uncorrected, Upper / Lower
-50
-60
28
30
32
-70
22
24
Average Output Power (dBm)
26
28
30
32
Gain vs. Output Power
Collector Current (mA)
12
11
10
9
8
160
32
Output Power (dBm)
36
40
28
30
32
Efficiency vs. Output Power
2140 MHz, Vcc = 28V, Icq = 40 mA, 25 ˚C
40
Single-carrier WCDMA TM 1+64 DPCH,
69% Clipping, PAR = 8.6 dB @ 0.01% CCDF
140
120
100
80
60
28
26
Average Output Power (dBm)
2140 MHz, Vcc = 28V, Icq = 40 mA, 25 ˚C
180
24
24
Icc vs. Output Power
CW tone, 2140 MHz, Vcc = 28V, Icq = 40 mA, 25 ˚C
13
20
22
Average Output Power (dBm)
Collector Efficiency (%)
26
Uncorrected, Upper / Lower
-50
DPD Corrected, Upper / Lower
-70
24
-40
DPD Corrected, Upper / Lower
-70
22
Single-carrier WCDMA TM 1+64 DPCH,
33% Clipping, PAR = 6.6 dB @ 0.01% CCDF
-60
DPD Corrected, Upper / Lower
Gain (dB)
DPD Correction vs ACLR vs. Output Power
WCDMA, 2140 MHz, Vcc = 28V, Icq = 40 mA, 25 ˚C
-30
ACLR (dBc)
ACLR (dBc)
-30
Single-carrier WCDMA TM 1+64 DPCH,
69% Clipping, PAR = 8.6 dB @ 0.01% CCDF
30
20
10
0
22
24
26
28
30
32
Average Output Power (dBm)
22
24
26
28
30
32
Average Output Power (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 13 of 14 May 2007 ver 1
AP603
High Dynamic Range 7W 28V HBT Amplifier
AP603-F Mechanical Information
This package is lead-free and RoHS-compliant. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded
(maximum 245 °C reflow temperature) soldering processes. The plating material on the pins is annealed matte tin over copper.
Drawing
Outline Drawing
Product Marking
The component will be laser marked with an
“AP603-F” product label with an alphanumeric
lot code on the top surface of the package.
Tape and reel specifications for this part will be
located on the website in the “Application
Notes” section.
Functional Pin Layout
Mounting Configuration / Land Pattern
Pin
1
2, 3, 7, 8, 12, 13
4, 5, 6
9, 10, 11
14
Backside paddle
Function
PIN_VBIAS
N/C
RF IN
RF Output / Vcc
PIN_VPD
GND
MSL / ESD Rating
MTTF vs. Junction Temperature
Thermal Specifications
Thermal Resistance, ΘJC
Referenced from peak junction to the
center of the bottomside ground paddle
Junction Temperature, TJ
For 106 hours MTTF
Rating
8.7 °C / W
192 ºC
Max Junction Temperature, TJ,max 250 ºC
For catastrophic failure
MTTF (hours)
Parameter
1.E+09
1.E+08
ESD Rating:
Value:
Test:
Standard:
Class 1B
Passes 500V to <1000V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
ESD Rating:
Value:
Test:
Standard:
Class IV
Passes 1000V to <2000V
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
MSL Rating: Level 3 at +260 °C convection reflow
Standard:
JEDEC Standard J-STD-020
1.E+07
1.E+06
1.E+05
120
140
160
180
200
Junction Temperature (°C)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 14 of 14 May 2007 ver 1