TRIQUINT TQP7M9104

TQP7M9104
2W High Linearity Amplifier
Applications
Repeaters
BTS Transceivers
BTS High Power Amplifiers
CDMA / WCDMA / LTE
General Purpose Wireless
24-pin QFN 4x4mm SMT Package
GND/NC
GND/NC
GND/NC
19
20
GND/NC
21
22
15
5
14
6
13
GND/NC
RFout/Vcc
RFout/Vcc
RFout/Vcc
GND/NC
GND/NC
GND/NC
Iref
12
4
11
16
7
GND/NC
3
GND/NC
RFin
17
10
RFin
18
2
9
GND/NC
1
GND/NC
GND/NC
GND/NC
GND/NC
Vbias
23
24
700-2700 MHz
+32.8 dBm P1dB
+49.5 dBm Output IP3
15.8 dB Gain at 2140 MHz
+5V Single Supply, 435 mA Collector Current
Internal RF overdrive protection
Internal DC overvoltage protection
Internal Active Bias
On chip ESD protection
Shut-down Capability
Capable of handling 10:1 VSWR at 5Vcc, 2.14
GHz, 32.8 dBm CW Pout or 23.5 dBm WCDMA
Pout
GND/NC











Functional Block Diagram
GND/NC
Product Features
8





Backside Paddle - RF/DC Ground
General Description
Pin Configuration
The TQP7M9104 is a high linearity driver amplifier in
industry standard, RoHS compliant, QFN surface
mount package. This InGaP/GaAs HBT delivers high
performance across 700-2700 MHz range of
frequencies with 15.8 dB Gain, +49.5 dBm OIP3 and
+32.5 dBm P1dB at 2.14 GHz while only consuming
435 mA quiescent collector current. All devices are
100% RF and DC tested.
Pin #
Symbol
1
4, 5
14, 15, 16
18
2, 3, 6, 7, 8, 9, 10, 11,
12,13, 17, 19, 20, 21,
22, 23, 24
Backside Paddle
Vbias
RFin
RFout/Vcc
Iref
The TQP7M9104 incorporates on-chip features that
differentiate it from other products in the market. The
amplifier integrates an on-chip DC over-voltage and
RF over-drive protection. This protects the amplifier
from electrical DC voltage surges and high input RF
input power levels that may occur in a system.
The TQP7M9104 is targeted for use as a driver
amplifier in wireless infrastructure where high
linearity, medium power, and high efficiency are
required. The device is an excellent candidate for
transceiver line cards and high power amplifiers in
current and next generation multi-carrier 3G / 4G
base stations.
GND / NC
RF/DC Ground
Ordering Information
Part No.
Description
TQP7M9104
TQP7M9104-PCB900
2W High Linearity Amplifier
920-960MHz EVB
TQP7M9104-PCB2140
2.11-2.17GHz EVB
Standard T/R size =2500 pieces on a 13” reel.
Data Sheet: Rev H 09/24/12
© 2012 TriQuint Semiconductor, Inc.
- 1 of 13-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TQP7M9104
2W High Linearity Amplifier
Specifications
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Rating
Parameter
Storage Temperature
Device Voltage, Vcc
-65 to +150°C
6.5 V
Vcc
Tcase
Maximum Input Power, CW
Min Typ Max Units
+5
-40
6
+30 dBm
Tj (for>10 hours MTTF)
Operation of this device outside the parameter ranges
given above may cause permanent damage.
+5.25
+85
V
°C
170
°C
Electrical specifications are measured at specified test
conditions.
Specifications are not guaranteed over all recommended
operating conditions.
Electrical Specifications
Test Conditions:VCC = +5V, ICQ = 435 mA, T = 25C using a TQP7M9104-PCB2140 application circuit.
Parameter
Conditions
Operational Bandwidth
Test Frequency
Power Gain
Input Return Loss
Output Return Loss
Min
Typical
700
2140
15.8
12
9.5
14.3
Output IP3
Pout=+17 dBm/tone,
∆f=1MHz
at -50 dBc ACLR
Max
Units
2700
MHz
MHz
dB
dB
dB
17.3
+45.5
+49.5
dBm
Output P1dB
Noise Figure
+32
+23.8
+32.8
4.4
dBm
dBm
dB
Quiescent Collector Current, Icq
Vcc
Iref
Thermal Resistance (jnc to case) θjc
355
WCDMA Channel Power
(1)
435
+5
19
15.7
490
mA
V
mA
°C/W
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 9.7 dB at 0.01% Prob.
Data Sheet: Rev H 09/24/12
© 2012 TriQuint Semiconductor, Inc.
- 2 of 13-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TQP7M9104
2W High Linearity Amplifier
Device Characterization Data
Input Reflection Coefficients
0.8
6
0.
2.
0
0.
4
0
3.
0
3.
0
4.
30
0
4.
5.0
5.0
0.2
0.2
25
15
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.4
0
0.2
10.0
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0
0.2
Gmax
20
0.4
10.0
-10.0
-4
.0
-5.
0
-3
.0
2.5
3
S(1,1)
Swp Min
0.05GHz
S(2,2)
.0
-2
-0.8
2
Frequency (GHz)
-1.0
1.5
-0.8
1
-1.0
0.5
-0
.6
0
.4
-0
.0
-2
.4
-0
0
-0
.6
5
2
-0.
-3
.0
2
-0.
Gain (S21)
-4
.0
-5.
0
10
-10.0
Gain (dB)
Swp Max
3GHz
2.
0
1.0
0.8
6
0.
35
Output Reflection Coefficients
Swp Max
3GHz
0.
4
40
1.0
45
Swp Min
0.05GHz
S-Parameter Data
°
Vcc = +5 V, Icq = 435 mA, Iref = 19mA, T = +25 C, unmatched 50 ohm system, calibrated to device leads
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
50
-0.4553
-179.26
20.126
118.98
-43.273
4.1446
-1.8524
S22 (ang)
-155.37
100
-0.4348
178.69
15.971
124.23
-42.615
-1.4433
-1.8878
-166.21
200
-0.4583
176.36
13.24
126.46
-40.235
2.3772
-1.859
-172.01
400
-0.5124
173.38
10.778
118.38
-40.956
0.7196
-1.5792
-174.84
600
-0.5796
171.48
8.9263
108.51
-41.682
10.901
-1.6005
-175.51
800
-0.6594
170.04
7.3201
100.05
-42.533
-8.3414
-1.6164
-174.73
1000
-0.7617
169.21
6.2878
93.94
-42.841
6.4435
-1.531
-173.74
1200
-0.8777
168.95
5.7693
89.116
-40.461
3.1558
-1.6296
-171.43
1400
-1.1121
168.56
5.5556
83.209
-39.435
-0.2787
-1.7656
-170.12
1600
-1.4274
167.84
6.0222
74.67
-41.097
-1.3568
-1.8812
-167.74
1800
-1.9525
165.88
6.3509
63.971
-37.935
-22.971
-1.951
-165.22
2000
-3.0149
163.02
7.1412
51.862
-36.666
-37.917
-1.9853
-163.19
2200
-5.3234
162.27
8.1891
30.583
-35.423
-57.21
-1.7616
-163.18
2400
-7.8162
-179.65
8.2216
2.8455
-35.631
-78.615
-1.5099
-167.05
2600
-5.6951
-159.12
6.6099
-26.943
-35.017
-113.27
-1.2811
-172.58
2800
-3.2673
-161.75
3.8288
-51.412
-37.551
-151.24
-1.2268
-179.96
3000
-2.1416
-169.16
0.9043
-67.725
-39.417
-168.38
-1.4503
175.32
Data Sheet: Rev H 09/24/12
© 2012 TriQuint Semiconductor, Inc.
- 3 of 13-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TQP7M9104
2W High Linearity Amplifier
Reference Design 869-894 MHz
Typical Performance at 25 °C
dBm
2
C11
J2
3
C9
51 
100 pF
2.7 pF
L5
6.8 nH
22 pF
R1
C1
B1
R3
C15
L3
L4
R2
L1
U1
C3
C8
C2
C9
L5
C10
19
20
GND/NC
21
GND/NC
RFout
GND/NC
7
R7
R6
C17
C11
RFout
L1
18 nH
0805
17
16
C3
J3
4.7 pF
RF
Output
15
C2
14
8.2 pF
13
Notes:
1. Components shown on the silkscreen but not on the schematic are not used.
2. 0 Ω resistors may be replaced with copper trace in the target application layout.
3. Iref can be used as device power down current by placing R7 at location R8.
4. The recommended component values are dependent upon the frequency of operation.
5. All components are of 0603 size unless stated on the schematic.
6. R1 is critical for device linearity performance.
7. Critical component placement locations:
Distance between center of C8 and U1 device package is 243 mil (11° at 880MHz)
Distance between center of L5 and U1 device package is 452 mil (20.5° at 880MHz)
Distance between center of C2 and U1 device package is 355 mil (16.1° at 880MHz)
Distance between center of C9 and U1 device package is 275 mil (12.4° at 880MHz)
C7
C14
22
U1
GND/NC
6
8.2 pF
C13
23
RFout
RFin
5
C8
GND/NC
GND/NC
RFin
4
C10
RF
Input
GND/NC
GND/NC
R2
C15
100 pF
18
12
V
mA
mA
GND/NC
+5
435
19
GND/NC
Supply Voltage, Vcc
Quiescent Current, Icq
Reference Current, Iref
11
dB
C1
100 pF
B1
0
Iref
GND/NC
23
1000 pF
R1
33 nH
0603
L3
0
Vbias
1
10
(at -50 dBc ACLR)
22.5
GND/NC
C14
22
C17
0.1 uF
R3
0
100 pF
WCDMA Channel Power
C7
10 uF
6032
C13
GND/NC
(+23 dBm/tone, ∆f = 1 MHz)
+44.7
L4
0
D3
SM05T1G
GND/NC
+44.9 +44.9
dB
dB
dB
dBm
R7
110 
9
20.8
-11.5
-9.8
+33.8
R6
220 
24
20.8 20.8
-13.3
-13
-7.7
-8.6
+34.3 +34.1
Vcc
+5V
Units
GND/NC
894
GND/NC
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
880
GND/NC
869
8
Frequency (MHz)
RF Performance Plots 869-894 MHz
Gain vs. Frequency
Return Loss (dB)
21
Gain (dB)
Return Loss vs. Frequency
0
20
19
1MHz Tone Spacing
Temp.=+25oC
S11
S22
-5
OIP3 vs. Output Power vs. Frequency
55
50
OIP3 (dBm)
22
-10
-15
45
40
0.869 GHz
35
0.88 GHz
0.894 GHz
18
0.85
0.86
0.87
0.88
0.89
30
-20
0.85
0.90
0.86
Frequency (GHz)
0.87
ACLR vs. Output Power vs. Frequency
-40
0.89
21
0.90
22
1000
23
24
25
26
27
Output Power / Tone(dBm)
Collector Current vs. Output Power
1100
Temp.=+25oC
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 9.7dB @ 0.01% Probability
3.84 MHz BW
-45
0.88
Frequency (GHz)
Frequency : 0.88 GHz
CW Signal
Temp.=+25oC
Icc (mA)
ACLR (dBm)
900
-50
-55
0.869GHz
-60
800
700
600
0.88GHz
500
0.894GHz
-65
400
12
14
16
18
20
22
24
26
Output Power (dBm)
Data Sheet: Rev H 09/24/12
© 2012 TriQuint Semiconductor, Inc.
20
22
24
26
28
30
32
34
Output Power (dBm)
- 4 of 13-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TQP7M9104
2W High Linearity Amplifier
Application Circuit 920-960 MHz (TQP7M9104-PCB900)
Vcc
+5V
R6
220 
C17
B1
100 pF
22 pF
2.7 pF
L5
6.8 nH
5
C8
6
20
19
GND/NC
22
23
21
GND/NC
GND/NC
RFout
RFin
RFout
GND/NC
GND/NC
7
6.8 pF
GND/NC
C10
U1
RFin
18
17
C15
100 pF
L1
18 nH
0805
16
C3
J3
4.7 pF
RF
Output
15
C2
14
8.2 pF
13
12
4
GND/NC
C9
RFout
GND/NC
51 
GND/NC
GND/NC
10
RF
Input
C11
L3
0
GND/NC
GND/NC
J2
3
C1
100 pF
B1
0
Iref
9
2
1000 pF
R1
33 nH
0603
Vbias
1
R2
GND/NC
24
C14
100 pF
GND/NC
C8
GND/NC
C3
GND/NC
L4
0
GND/NC
U1
C9
C17
0.1 uF
R3
0
11
R1
C15
C2
R2
C10
L5
C11
C7
10 uF
6032
C13
L1
C14
R7
110 
D3
SM05T1G
C1
L3
L4
R3
C13
8
R6
R7
C7
Notes:
1. See PC Board Layout under Application Information section for more information.
2. Components shown on the silkscreen but not on the schematic are not used.
3. 0 Ω resistors may be replaced with copper trace in the target application layout.
4. Iref can be used as device power down current by placing R7 at location R8.
5. The recommended component values are dependent upon the frequency of operation.
6. All components are of 0603 size unless stated on the schematic.
7. R1 is critical for device linearity performance.
8. Critical component placement locations:
Distance between center of C8 and U1 device package is 190 mil (9.2° at 940MHz)
Distance between center of L5 and U1 device package is 452 mil (21.8° at 940MHz)
Distance between center of C2 and U1 device package is 305 mil (14.7° at 940MHz)
Distance between center of C9 and U1 device package is 275 mil (13.3° at 940MHz)
Bill of Material
Ref Des
Manuf.
Part Number
n/a
n/a
Printed Circuit Board
TriQuint
1078282
n/a
n/a
Printed Circuit Board
TriQuint
1078282
D3
n/a
Zener, dual, SOT-23
various
Capacitor, Chip, 0603, ±0.05pF, 50 V, Accu-P
Resistor, Chip, 0603, 5%, 1/16W
Inductor, 0603, 5%
Capacitor, Chip, 0603, ±0.05pF, 50 V, Accu-P
Capacitor, Chip, 0603, ±0.05pF, 50 V, Accu-P
Capacitor, Chip, 0603, 5%, 50 V, NPO/COG
Capacitor, Chip, 0603, 5%, 50V, NPO/COG
Inductor, 1008, 5%, Coilcraft CS Series
Capacitor, Chip, 0603, 10%, 50V, NPO/COG
Capacitor, Chip, 0603, 50V, X5R, 10%
Capacitor , Tantalum, 6032, 35V, 10%
Resistor, Chip, 0603, 5%, 1/16W
Resistor, Chip, 0603, 1%, 1/16W
Resistor, Chip, 0603, 1%, 1/16W
Inductor, 0603, 5%
Do Not Place
AVX
various
Toko
AVX
AVX
various
various
Coilcraft
various
various
various
various
various
various
Toko
C9
B1, L3, L4, R3
L5
C3
C2, C8
C10
C1, C11, C14, C15
L1
C17
C13
C7
R2
R6
R7
R1
R8, R4, C12, C4,D3
Value
2.7 pF
0Ω
6.8 nH
4.7 pF
8.2 pF
22 pF
100 pF
18 nH
1000 pF
0.1 uF
10 uF
51 Ω
220 Ω
110 Ω
33 nH
n/a
Description
Data Sheet: Rev H 09/24/12
© 2012 TriQuint Semiconductor, Inc.
- 5 of 13-
06035J2R7ABSTR
LL1608-FSL6N8
06035J4R7ABSTR
06035J8R2ABSTR
1008HQ-18NXJL
LL1608-FSL33N
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TQP7M9104
2W High Linearity Amplifier
Typical Performance 920-960 MHz
Typical Performance at 25 °C
Frequency (MHz)
920
940
960
Units
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (+23 dBm/tone, ∆f = 1 MHz)
WCDMA Channel power (at -50 dBc ACLR) [1]
Supply Voltage, Vcc
Quiescent Collector Current, Icq
Reference Current, Iref
20.8
-13
-9
+33.9
+45
+24
21
-12
-11.8
+33.8
+45
+23.5
+5
435
19
21
-11
-15
+33.4
+45
+23
dB
dB
dB
dBm
dBm
dBm
V
mA
mA
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 9.7 dB at 0.01% Prob.
RF Performance Plots 920-960 MHz
Gain vs. Frequency
23
0
Return Loss (dB)
Gain (dB)
22
21
20
- 40 °C
+25°C
+85 °C
19
18
0.90
0.92
0.94
0.96
0.98
- 40 °C
+25°C
+85 °C
-5
-10
-15
-20
0.90
1.00
Input Return Loss vs. Frequency
0.92
0.94
Frequency (GHz)
Output Return Loss vs. Frequency
37
- 40 °C
+25°C
+85 °C
-5
-10
-15
-20
0.90
0.98
1.00
P1dB vs. Temperature
+85°C
+25°C
−40°C
36
P1dB (dBm)
Return Loss (dB)
0
0.96
Frequency (GHz)
35
34
33
0.92
0.94
0.96
0.98
1.00
32
0.92
Frequency (GHz)
Data Sheet: Rev H 09/24/12
© 2012 TriQuint Semiconductor, Inc.
0.93
0.94
0.95
0.96
Frequency (GHz)
- 6 of 13-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TQP7M9104
2W High Linearity Amplifier
OIP3 vs. Output Power vs. Temperature
55
OIP3 vs. Output Power vs. Frequency
55
1MHz Tone Spacing
1MHz Tone Spacing
Temp.=+25oC
50
OIP3 (dBm)
OIP3 (dBm)
50
45
40
- 40 °C
+25°C
+85 °C
35
45
40
0.92 GHz
35
0.94 GHz
0.96 GHz
30
30
21
22
23
24
25
26
27
21
22
Output Power / Tone(dBm)
ACLR vs. Output Power vs. Temperature
-40
24
25
26
27
ACLR vs. Output Power vs. Frequency
-40
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 9.7dB @ 0.01% Probability
3.84 MHz BW
-45
23
Output Power / Tone(dBm)
Temp.=+25oC
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 9.7dB @ 0.01% Probability
3.84 MHz BW
-45
ACLR (dBm)
ACLR (dBm)
Frequency : 0.94 GHz
-50
-55
- 40 °C
+25°C
+85 °C
-60
-50
-55
0.92 GHz
-60
0.94 GHz
0.96 GHz
-65
-65
12
14
16
18
20
22
24
26
12
14
16
Output Power (dBm)
20
22
24
26
Collector Current vs. Output Power
1100
1000
18
Output Power (dBm)
Frequency : 0.94 GHz
CW Signal
Temp.=+25oC
Icc (mA)
900
800
700
600
500
400
16
18
20
22
24
26
28
30
32
34
Output Power (dBm)
Data Sheet: Rev H 09/24/12
© 2012 TriQuint Semiconductor, Inc.
- 7 of 13-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TQP7M9104
2W High Linearity Amplifier
Application Circuit 2110-2170 MHz (TQP7M9104-PCB2140)
Vcc
+5V
R6
220 
R7
110 
D3
SM05T1G
C7
10 uF
6032
C13
C17
6
20
19
GND/NC
22
21
GND/NC
GND/NC
23
RFout
GND/NC
GND/NC
7
1.5 pF
GND/NC
5
C8
RFin
18
17
C15
22 pF
L1
18 nH
0805
16
C3
J3
100 pF
RF
Output
15
C2
14
2.7 pF
13
12
2.4 pF
22 pF
RFout
GND/NC
C10
U1
RFin
GND/NC
0
4
10
RF
Input
C9
RFout
GND/NC
51 
GND/NC
GND/NC
9
C11
GND/NC
GND/NC
J2
3
C1
100 pF
B1
0
Iref
GND/NC
L1
C2
2
R2
1000 pF
R1
120 nH
0603
L3
0
Vbias
C3
C8
C10
U1
C9
GND/NC
24
C14
100 pF
1
R2
GND/NC
GND/NC
L4
0
8
C15
C14
C11
C17
0.1 uF
R3
0
B1
R1
C1
L3
L4
R3
C13
11
R6
R7
C7
Notes:
1. See PC Board Layout under Application Information section for more information.
2. Components shown on the silkscreen but not on the schematic are not used.
3. 0 Ω resistors may be replaced with copper trace in the target application layout.
4. Iref can be used as device power down current by placing R7 at location R8.
5. The recommended component values are dependent upon the frequency of operation.
6. All components are of 0603 size unless stated on the schematic.
7. R1 is critical for device linearity performance.
8. Critical component placement locations:
Distance between center of C8 and U1 device package is 50 mil (5.5° at 2140MHz)
Distance between center of C2 and U1 device package is 113 mil (12.4° at 2140MHz)
Distance between center of C9 and U1 device package is 275 mil (30.3° at 2140MHz)
Bill of Material
Ref Des
Value
Description
Manuf.
Part Number
U1
n/a
2W High Linearity Amplifier
TriQuint
TQP7M9104
n/a
n/a
Printed Circuit Board
TriQuint
1078282
D3
n/a
Zener, dual, SOT-23
various
Capacitor, Chip, 0603, ±0.05pF, 50V, Accu-P
Capacitor, Chip, 0603, ±0.05pF, 50V, Accu-P
Capacitor, Chip, 0603, ±0.05pF, 50V, Accu-P
Resistor, Chip, 0603, 5%, 1/16W
Capacitor, Chip, 0603, 5%, 50V, NPO/COG
Capacitor, Chip, 0603, 5%, 50V, NPO/COG
Inductor, 1008, 5%, Ceramic
Capacitor, Chip, 0603, 10%, 50V, NPO/COG
Capacitor, Chip, 0603, 10%, 50V, X5R
Capacitor , Tantalum, 6032, 20 %, 50V
Resistor, Chip, 0603, 5%, 1/16W
Resistor, Chip, 0603, 1%, 1/16W
Resistor, Chip, 0603, 1%, 1/16W
Inductor, 0603, 5%
Do Not Place
AVX
AVX
AVX
various
various
various
Coilcraft
various
various
various
various
various
various
Toko
C8
C9
C2
B1, L3, L4, R3, C11
C10, C15
C1, C14, C3
L1
C17
C13
C7
R2
R6
R7
R1
R8, R4, C12, C4, D3
1.5 pF
2.4 pF
2.7 pF
0Ω
22 pF
100 pF
18 nH
1000 pF
0.1 uF
10 uF
51 Ω
220 Ω
110 Ω
120 nH
n/a
Data Sheet: Rev H 09/24/12
© 2012 TriQuint Semiconductor, Inc.
- 8 of 13-
06035J1R5ABSTR
06035J2R4ABSTR
06035J2R7ABSTR
1008HQ-18NXJL
LL1608-FSR12J
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
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TQP7M9104
2W High Linearity Amplifier
Typical Performance 2110-2170 MHz
Frequency
MHz
2110
2140
2170
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (+17 dBm/tone, ∆f = 1 MHz)
WCDMA Channel power (at -50 dBc ACLR) [1]
Noise Figure
Supply Voltage, Vcc
Quiescent Collector Current, Icq
Reference Current , Iref
dB
dB
dB
dBm
dBm
dBm
dB
V
mA
mA
15.8
-12.4
-8.7
+32.9
+49
+23.5
4.4
15.8
-12.0
-9.5
+32.8
+49.5
+23.8
4.4
+5
435
19
15.8
-11.8
-10.5
+32.8
+50
+24.0
4.6
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 9.7 dB at 0.01% Prob.
RF Performance Plots 2110-2170 MHz
Gain vs. Frequency
18
0
Return Loss (dB)
Gain (dB)
17
16
15
- 40°C
+25°C
+85°C
14
13
2.10
2.12
2.14
2.16
2.18
- 40°C
+25°C
+85°C
-5
-10
-15
-20
2.10
2.20
Input Return Loss vs. Frequency
2.12
Frequency (GHz)
Output Return Loss vs. Frequency
- 40°C
+25°C
+85°C
-5
2.18
2.20
+85°C
+25°C
−40°C
34
-10
-15
-20
2.10
2.16
P1dB vs. Temperature
35
P1dB (dBm)
Return Loss (dB)
0
2.14
Frequency (GHz)
33
32
31
2.12
2.14
2.16
2.18
2.20
30
2.11
Data Sheet: Rev H 09/24/12
© 2012 TriQuint Semiconductor, Inc.
2.12
2.13
2.14
2.15
2.16
2.17
Frequency (GHz)
Frequency (GHz)
- 9 of 13-
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TQP7M9104
2W High Linearity Amplifier
OIP3 vs. Output Power vs. Temperature
55
OIP3 vs. Output Power vs. Frequency
55
1MHz Tone Spacing
1MHz Tone Spacing
Temp.=+25oC
50
OIP3 (dBm)
OIP3 (dBm)
50
45
40
- 40 °C
+25°C
+85 °C
35
45
40
35
2.11 GHz
30
2.14 GHz
2.17 GHz
30
13
15
17
19
21
23
25
13
15
17
Output Power / Tone(dBm)
ACLR vs. Output Power vs. Temperature
-40
21
23
25
ACLR vs. Output Power vs. Frequency
-40
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 9.7dB @ 0.01% Probability
3.84 MHz BW
-45
19
Output Power / Tone(dBm)
Temp.=+25oC
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 9.7dB @ 0.01% Probability
3.84 MHz BW
-45
ACLR (dBm)
ACLR (dBm)
Frequency : 2.14 GHz
-50
-55
- 40 °C
+25°C
+85 °C
-60
-50
-55
2.11 GHz
-60
2.14 GHz
2.17 GHz
-65
-65
17
19
21
23
25
27
17
19
Output Power (dBm)
Icc vs. Output Power
1000
21
23
25
27
Output Power (dBm)
6.0
Noise Figure vs. Frequency
900
Temp.=+25oC
5.0
800
NF (dB)
Collector Current (mA)
Frequency : 2.14 GHz
CW Signal
700
4.0
600
3.0
500
400
16
18
20
22
24
26
28
30
32
34
2.0
2.11
Output Power (dBm)
Data Sheet: Rev H 09/24/12
© 2012 TriQuint Semiconductor, Inc.
2.12
2.13
2.14
2.15
2.16
2.17
Frequency (GHz)
- 10 of 13-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
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TQP7M9104
2W High Linearity Amplifier
GND/NC
GND/NC
19
GND/NC
GND/NC
20
21
15
5
14
6
13
GND/NC
RFout/Vcc
RFout/Vcc
RFout/Vcc
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
Iref
12
4
11
16
10
3
9
17
7
GND/NC
2
GND/NC
RFin
22
GND/NC
RFin
18
8
GND/NC
1
GND/NC
GND/NC
23
24
Vbias
GND/NC
Pin Configuration and Description
Backside Paddle - RF/DC Ground
Pin
Symbol
Description
1
2, 3, 6,7, 8, 9, 10, 11,
12, 13,17, 19, 20, 21,
22, 23, 24
Vbias
Voltage supply for active bias for the amp. Connect to same supply voltage as Vcc.
GND/NC
No internal connection. This pin can be grounded or N/C on PCB. Land pads should
be provided for PCB mounting integrity.
4, 5
RFin
14, 15, 16
RFout / Vcc
18
Iref
Backside paddle
RF/DC GND
RF Input. DC voltage present, blocking capacitor required. Requires external match
for optimal performance.
RF Output. DC Voltage present, blocking cap required. Requires external match for
optimal performance.
Reference current into internal active bias current mirror. Current into Iref sets
device quiescent current. Also, can be used as on/off control.
Multiple Vias should be employed to minimize inductance and thermal resistance.
Use recommended via pattern shown under mounting configuration and ensure
good solder attach for optimum thermal and electrical performance
Evaluation Board PCB Information
TriQuint PCB 1080068 Material and Stack-up
0.014"
0.062" ± 0.006"
Finished Board
Thickness
Nelco N-4000-13
εr=3.7 typ.
1 oz. Cu top layer
1 oz. Cu inner layer
Core
1 oz. Cu inner layer
0.014"
Nelco N-4000-13
1 oz. Cu bottom layer
50 ohm line dimensions: width = .031”
spacing = .035”.
Data Sheet: Rev H 09/24/12
© 2012 TriQuint Semiconductor, Inc.
- 11 of 13-
Disclaimer: Subject to change without notice
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TQP7M9104
2W High Linearity Amplifier
Mechanical Information
Package Marking and Dimensions
Package Marking:
Part number – 7M9104
Year, week - YYWW
Assembly code - XXXXX
C
4.000
A
0.203 Ref.
2.700±0.050
Exp.DAP
PIN #1 IDENTIFICATION
CHAMFER 0.300 X 45°
.400±0.050
B
4.000
.500 Bsc
7M9104
2.700±0.050
Exp.DAP
R.075
.25±0.050
.85±.05
2.500
Ref.
0.000-.050
f .10 C
d .08 C
PCB Mounting Pattern
16X .38
.64 TYP
.50 PITCH, TYP
24X .70
FULL R.19
.64 TYP
2.70
2.70
COMPONENT SIDE
2.70
2.70
BACK SIDE
Data Sheet: Rev H 09/24/12
© 2012 TriQuint Semiconductor, Inc.
- 12 of 13-
NOTES:
1. The pad pattern shown has been developed and
tested for optimized assembly at TriQuint
Semiconductor. The PCB land pattern has been
developed to accommodate lead and package
tolerances. Since surface mount processes vary
from supplier to supplier, careful process
development is recommended.
2. All dimensions are in millimeters [inches]. Angles
are in degrees.
3. Use 1 oz. copper minimum for top and bottom layer
metal.
4. Vias are required under the backside paddle of this
device for proper RF/DC grounding and thermal
dissipation. We recommend a 0.35mm (#80/.0135")
diameter bit for drilling via holes and a final plated
thru diameter of 0.25mm (0.10”).
5. Ensure good package backside paddle solder attach
for reliable operation and best electrical
performance.
6. Place mounting screws near the part to fasten a
back side heat sink.
7. Do not apply solder mask to the back side of the PC
board in the heat sink contact region.
8. Ensure that the backside via region makes good
physical contact with the heat sink.
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TQP7M9104
2W High Linearity Amplifier
Product Compliance Information
ESD Sensitivity Ratings
Solderability
Compatible with both lead-free (260 °C max.
reflow temp.) and tin/lead (245 °C max. reflow
temp.) soldering processes.
ESD Rating:
Value:
Test:
Standard:
1C
≥ 1000 V and < 2000 V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
Package lead plating: Annealed Matte Tin over
Copper
ESD Rating:
Value:
Test:
Standard:
IV
≥ 1000 V min
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain
Hazardous Substances in Electrical and Electronic
Equipment).
RoHs Compliance
This product also has the following attributes:
 Lead Free
 Halogen Free (Chlorine, Bromine)
 Antimony Free
 TBBP-A (C15H12Br402) Free
 PFOS Free
 SVHC Free
MSL Classification
MSL Rating:
Test:
Standard:
1
+260 °C convection reflow
JEDEC standard IPC/JEDEC J-STD-020
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and
information about TriQuint:
Web: www.triquint.com
Email: [email protected]
Tel:
Fax:
+1.503.615.9000
+1.503.615.8902
For technical questions and application information: Email: [email protected]
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the
information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information
contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the
entire risk associated with such information is entirely with the user. All information contained herein is subject to
change without notice. Customers should obtain and verify the latest relevant information before placing orders for
TriQuint products. The information contained herein or any use of such information does not grant, explicitly or
implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to
such information itself or anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe
personal injury or death.
Data Sheet: Rev H 09/24/12
© 2012 TriQuint Semiconductor, Inc.
- 13 of 13-
Disclaimer: Subject to change without notice
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