TQP7M9104 2W High Linearity Amplifier Applications Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless 24-pin QFN 4x4mm SMT Package GND/NC GND/NC GND/NC 19 20 GND/NC 21 22 15 5 14 6 13 GND/NC RFout/Vcc RFout/Vcc RFout/Vcc GND/NC GND/NC GND/NC Iref 12 4 11 16 7 GND/NC 3 GND/NC RFin 17 10 RFin 18 2 9 GND/NC 1 GND/NC GND/NC GND/NC GND/NC Vbias 23 24 700-2700 MHz +32.8 dBm P1dB +49.5 dBm Output IP3 15.8 dB Gain at 2140 MHz +5V Single Supply, 435 mA Collector Current Internal RF overdrive protection Internal DC overvoltage protection Internal Active Bias On chip ESD protection Shut-down Capability Capable of handling 10:1 VSWR at 5Vcc, 2.14 GHz, 32.8 dBm CW Pout or 23.5 dBm WCDMA Pout GND/NC Functional Block Diagram GND/NC Product Features 8 Backside Paddle - RF/DC Ground General Description Pin Configuration The TQP7M9104 is a high linearity driver amplifier in industry standard, RoHS compliant, QFN surface mount package. This InGaP/GaAs HBT delivers high performance across 700-2700 MHz range of frequencies with 15.8 dB Gain, +49.5 dBm OIP3 and +32.5 dBm P1dB at 2.14 GHz while only consuming 435 mA quiescent collector current. All devices are 100% RF and DC tested. Pin # Symbol 1 4, 5 14, 15, 16 18 2, 3, 6, 7, 8, 9, 10, 11, 12,13, 17, 19, 20, 21, 22, 23, 24 Backside Paddle Vbias RFin RFout/Vcc Iref The TQP7M9104 incorporates on-chip features that differentiate it from other products in the market. The amplifier integrates an on-chip DC over-voltage and RF over-drive protection. This protects the amplifier from electrical DC voltage surges and high input RF input power levels that may occur in a system. The TQP7M9104 is targeted for use as a driver amplifier in wireless infrastructure where high linearity, medium power, and high efficiency are required. The device is an excellent candidate for transceiver line cards and high power amplifiers in current and next generation multi-carrier 3G / 4G base stations. GND / NC RF/DC Ground Ordering Information Part No. Description TQP7M9104 TQP7M9104-PCB900 2W High Linearity Amplifier 920-960MHz EVB TQP7M9104-PCB2140 2.11-2.17GHz EVB Standard T/R size =2500 pieces on a 13” reel. Data Sheet: Rev H 09/24/12 © 2012 TriQuint Semiconductor, Inc. - 1 of 13- Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TQP7M9104 2W High Linearity Amplifier Specifications Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Storage Temperature Device Voltage, Vcc -65 to +150°C 6.5 V Vcc Tcase Maximum Input Power, CW Min Typ Max Units +5 -40 6 +30 dBm Tj (for>10 hours MTTF) Operation of this device outside the parameter ranges given above may cause permanent damage. +5.25 +85 V °C 170 °C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test Conditions:VCC = +5V, ICQ = 435 mA, T = 25C using a TQP7M9104-PCB2140 application circuit. Parameter Conditions Operational Bandwidth Test Frequency Power Gain Input Return Loss Output Return Loss Min Typical 700 2140 15.8 12 9.5 14.3 Output IP3 Pout=+17 dBm/tone, ∆f=1MHz at -50 dBc ACLR Max Units 2700 MHz MHz dB dB dB 17.3 +45.5 +49.5 dBm Output P1dB Noise Figure +32 +23.8 +32.8 4.4 dBm dBm dB Quiescent Collector Current, Icq Vcc Iref Thermal Resistance (jnc to case) θjc 355 WCDMA Channel Power (1) 435 +5 19 15.7 490 mA V mA °C/W Notes: 1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 9.7 dB at 0.01% Prob. Data Sheet: Rev H 09/24/12 © 2012 TriQuint Semiconductor, Inc. - 2 of 13- Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TQP7M9104 2W High Linearity Amplifier Device Characterization Data Input Reflection Coefficients 0.8 6 0. 2. 0 0. 4 0 3. 0 3. 0 4. 30 0 4. 5.0 5.0 0.2 0.2 25 15 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0 0.2 10.0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0 0.2 Gmax 20 0.4 10.0 -10.0 -4 .0 -5. 0 -3 .0 2.5 3 S(1,1) Swp Min 0.05GHz S(2,2) .0 -2 -0.8 2 Frequency (GHz) -1.0 1.5 -0.8 1 -1.0 0.5 -0 .6 0 .4 -0 .0 -2 .4 -0 0 -0 .6 5 2 -0. -3 .0 2 -0. Gain (S21) -4 .0 -5. 0 10 -10.0 Gain (dB) Swp Max 3GHz 2. 0 1.0 0.8 6 0. 35 Output Reflection Coefficients Swp Max 3GHz 0. 4 40 1.0 45 Swp Min 0.05GHz S-Parameter Data ° Vcc = +5 V, Icq = 435 mA, Iref = 19mA, T = +25 C, unmatched 50 ohm system, calibrated to device leads Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) 50 -0.4553 -179.26 20.126 118.98 -43.273 4.1446 -1.8524 S22 (ang) -155.37 100 -0.4348 178.69 15.971 124.23 -42.615 -1.4433 -1.8878 -166.21 200 -0.4583 176.36 13.24 126.46 -40.235 2.3772 -1.859 -172.01 400 -0.5124 173.38 10.778 118.38 -40.956 0.7196 -1.5792 -174.84 600 -0.5796 171.48 8.9263 108.51 -41.682 10.901 -1.6005 -175.51 800 -0.6594 170.04 7.3201 100.05 -42.533 -8.3414 -1.6164 -174.73 1000 -0.7617 169.21 6.2878 93.94 -42.841 6.4435 -1.531 -173.74 1200 -0.8777 168.95 5.7693 89.116 -40.461 3.1558 -1.6296 -171.43 1400 -1.1121 168.56 5.5556 83.209 -39.435 -0.2787 -1.7656 -170.12 1600 -1.4274 167.84 6.0222 74.67 -41.097 -1.3568 -1.8812 -167.74 1800 -1.9525 165.88 6.3509 63.971 -37.935 -22.971 -1.951 -165.22 2000 -3.0149 163.02 7.1412 51.862 -36.666 -37.917 -1.9853 -163.19 2200 -5.3234 162.27 8.1891 30.583 -35.423 -57.21 -1.7616 -163.18 2400 -7.8162 -179.65 8.2216 2.8455 -35.631 -78.615 -1.5099 -167.05 2600 -5.6951 -159.12 6.6099 -26.943 -35.017 -113.27 -1.2811 -172.58 2800 -3.2673 -161.75 3.8288 -51.412 -37.551 -151.24 -1.2268 -179.96 3000 -2.1416 -169.16 0.9043 -67.725 -39.417 -168.38 -1.4503 175.32 Data Sheet: Rev H 09/24/12 © 2012 TriQuint Semiconductor, Inc. - 3 of 13- Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TQP7M9104 2W High Linearity Amplifier Reference Design 869-894 MHz Typical Performance at 25 °C dBm 2 C11 J2 3 C9 51 100 pF 2.7 pF L5 6.8 nH 22 pF R1 C1 B1 R3 C15 L3 L4 R2 L1 U1 C3 C8 C2 C9 L5 C10 19 20 GND/NC 21 GND/NC RFout GND/NC 7 R7 R6 C17 C11 RFout L1 18 nH 0805 17 16 C3 J3 4.7 pF RF Output 15 C2 14 8.2 pF 13 Notes: 1. Components shown on the silkscreen but not on the schematic are not used. 2. 0 Ω resistors may be replaced with copper trace in the target application layout. 3. Iref can be used as device power down current by placing R7 at location R8. 4. The recommended component values are dependent upon the frequency of operation. 5. All components are of 0603 size unless stated on the schematic. 6. R1 is critical for device linearity performance. 7. Critical component placement locations: Distance between center of C8 and U1 device package is 243 mil (11° at 880MHz) Distance between center of L5 and U1 device package is 452 mil (20.5° at 880MHz) Distance between center of C2 and U1 device package is 355 mil (16.1° at 880MHz) Distance between center of C9 and U1 device package is 275 mil (12.4° at 880MHz) C7 C14 22 U1 GND/NC 6 8.2 pF C13 23 RFout RFin 5 C8 GND/NC GND/NC RFin 4 C10 RF Input GND/NC GND/NC R2 C15 100 pF 18 12 V mA mA GND/NC +5 435 19 GND/NC Supply Voltage, Vcc Quiescent Current, Icq Reference Current, Iref 11 dB C1 100 pF B1 0 Iref GND/NC 23 1000 pF R1 33 nH 0603 L3 0 Vbias 1 10 (at -50 dBc ACLR) 22.5 GND/NC C14 22 C17 0.1 uF R3 0 100 pF WCDMA Channel Power C7 10 uF 6032 C13 GND/NC (+23 dBm/tone, ∆f = 1 MHz) +44.7 L4 0 D3 SM05T1G GND/NC +44.9 +44.9 dB dB dB dBm R7 110 9 20.8 -11.5 -9.8 +33.8 R6 220 24 20.8 20.8 -13.3 -13 -7.7 -8.6 +34.3 +34.1 Vcc +5V Units GND/NC 894 GND/NC Gain Input Return Loss Output Return Loss Output P1dB Output IP3 880 GND/NC 869 8 Frequency (MHz) RF Performance Plots 869-894 MHz Gain vs. Frequency Return Loss (dB) 21 Gain (dB) Return Loss vs. Frequency 0 20 19 1MHz Tone Spacing Temp.=+25oC S11 S22 -5 OIP3 vs. Output Power vs. Frequency 55 50 OIP3 (dBm) 22 -10 -15 45 40 0.869 GHz 35 0.88 GHz 0.894 GHz 18 0.85 0.86 0.87 0.88 0.89 30 -20 0.85 0.90 0.86 Frequency (GHz) 0.87 ACLR vs. Output Power vs. Frequency -40 0.89 21 0.90 22 1000 23 24 25 26 27 Output Power / Tone(dBm) Collector Current vs. Output Power 1100 Temp.=+25oC W-CDMA 3GPP Test Model 1+64 DPCH PAR = 9.7dB @ 0.01% Probability 3.84 MHz BW -45 0.88 Frequency (GHz) Frequency : 0.88 GHz CW Signal Temp.=+25oC Icc (mA) ACLR (dBm) 900 -50 -55 0.869GHz -60 800 700 600 0.88GHz 500 0.894GHz -65 400 12 14 16 18 20 22 24 26 Output Power (dBm) Data Sheet: Rev H 09/24/12 © 2012 TriQuint Semiconductor, Inc. 20 22 24 26 28 30 32 34 Output Power (dBm) - 4 of 13- Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TQP7M9104 2W High Linearity Amplifier Application Circuit 920-960 MHz (TQP7M9104-PCB900) Vcc +5V R6 220 C17 B1 100 pF 22 pF 2.7 pF L5 6.8 nH 5 C8 6 20 19 GND/NC 22 23 21 GND/NC GND/NC RFout RFin RFout GND/NC GND/NC 7 6.8 pF GND/NC C10 U1 RFin 18 17 C15 100 pF L1 18 nH 0805 16 C3 J3 4.7 pF RF Output 15 C2 14 8.2 pF 13 12 4 GND/NC C9 RFout GND/NC 51 GND/NC GND/NC 10 RF Input C11 L3 0 GND/NC GND/NC J2 3 C1 100 pF B1 0 Iref 9 2 1000 pF R1 33 nH 0603 Vbias 1 R2 GND/NC 24 C14 100 pF GND/NC C8 GND/NC C3 GND/NC L4 0 GND/NC U1 C9 C17 0.1 uF R3 0 11 R1 C15 C2 R2 C10 L5 C11 C7 10 uF 6032 C13 L1 C14 R7 110 D3 SM05T1G C1 L3 L4 R3 C13 8 R6 R7 C7 Notes: 1. See PC Board Layout under Application Information section for more information. 2. Components shown on the silkscreen but not on the schematic are not used. 3. 0 Ω resistors may be replaced with copper trace in the target application layout. 4. Iref can be used as device power down current by placing R7 at location R8. 5. The recommended component values are dependent upon the frequency of operation. 6. All components are of 0603 size unless stated on the schematic. 7. R1 is critical for device linearity performance. 8. Critical component placement locations: Distance between center of C8 and U1 device package is 190 mil (9.2° at 940MHz) Distance between center of L5 and U1 device package is 452 mil (21.8° at 940MHz) Distance between center of C2 and U1 device package is 305 mil (14.7° at 940MHz) Distance between center of C9 and U1 device package is 275 mil (13.3° at 940MHz) Bill of Material Ref Des Manuf. Part Number n/a n/a Printed Circuit Board TriQuint 1078282 n/a n/a Printed Circuit Board TriQuint 1078282 D3 n/a Zener, dual, SOT-23 various Capacitor, Chip, 0603, ±0.05pF, 50 V, Accu-P Resistor, Chip, 0603, 5%, 1/16W Inductor, 0603, 5% Capacitor, Chip, 0603, ±0.05pF, 50 V, Accu-P Capacitor, Chip, 0603, ±0.05pF, 50 V, Accu-P Capacitor, Chip, 0603, 5%, 50 V, NPO/COG Capacitor, Chip, 0603, 5%, 50V, NPO/COG Inductor, 1008, 5%, Coilcraft CS Series Capacitor, Chip, 0603, 10%, 50V, NPO/COG Capacitor, Chip, 0603, 50V, X5R, 10% Capacitor , Tantalum, 6032, 35V, 10% Resistor, Chip, 0603, 5%, 1/16W Resistor, Chip, 0603, 1%, 1/16W Resistor, Chip, 0603, 1%, 1/16W Inductor, 0603, 5% Do Not Place AVX various Toko AVX AVX various various Coilcraft various various various various various various Toko C9 B1, L3, L4, R3 L5 C3 C2, C8 C10 C1, C11, C14, C15 L1 C17 C13 C7 R2 R6 R7 R1 R8, R4, C12, C4,D3 Value 2.7 pF 0Ω 6.8 nH 4.7 pF 8.2 pF 22 pF 100 pF 18 nH 1000 pF 0.1 uF 10 uF 51 Ω 220 Ω 110 Ω 33 nH n/a Description Data Sheet: Rev H 09/24/12 © 2012 TriQuint Semiconductor, Inc. - 5 of 13- 06035J2R7ABSTR LL1608-FSL6N8 06035J4R7ABSTR 06035J8R2ABSTR 1008HQ-18NXJL LL1608-FSL33N Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TQP7M9104 2W High Linearity Amplifier Typical Performance 920-960 MHz Typical Performance at 25 °C Frequency (MHz) 920 940 960 Units Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (+23 dBm/tone, ∆f = 1 MHz) WCDMA Channel power (at -50 dBc ACLR) [1] Supply Voltage, Vcc Quiescent Collector Current, Icq Reference Current, Iref 20.8 -13 -9 +33.9 +45 +24 21 -12 -11.8 +33.8 +45 +23.5 +5 435 19 21 -11 -15 +33.4 +45 +23 dB dB dB dBm dBm dBm V mA mA Notes: 1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 9.7 dB at 0.01% Prob. RF Performance Plots 920-960 MHz Gain vs. Frequency 23 0 Return Loss (dB) Gain (dB) 22 21 20 - 40 °C +25°C +85 °C 19 18 0.90 0.92 0.94 0.96 0.98 - 40 °C +25°C +85 °C -5 -10 -15 -20 0.90 1.00 Input Return Loss vs. Frequency 0.92 0.94 Frequency (GHz) Output Return Loss vs. Frequency 37 - 40 °C +25°C +85 °C -5 -10 -15 -20 0.90 0.98 1.00 P1dB vs. Temperature +85°C +25°C −40°C 36 P1dB (dBm) Return Loss (dB) 0 0.96 Frequency (GHz) 35 34 33 0.92 0.94 0.96 0.98 1.00 32 0.92 Frequency (GHz) Data Sheet: Rev H 09/24/12 © 2012 TriQuint Semiconductor, Inc. 0.93 0.94 0.95 0.96 Frequency (GHz) - 6 of 13- Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TQP7M9104 2W High Linearity Amplifier OIP3 vs. Output Power vs. Temperature 55 OIP3 vs. Output Power vs. Frequency 55 1MHz Tone Spacing 1MHz Tone Spacing Temp.=+25oC 50 OIP3 (dBm) OIP3 (dBm) 50 45 40 - 40 °C +25°C +85 °C 35 45 40 0.92 GHz 35 0.94 GHz 0.96 GHz 30 30 21 22 23 24 25 26 27 21 22 Output Power / Tone(dBm) ACLR vs. Output Power vs. Temperature -40 24 25 26 27 ACLR vs. Output Power vs. Frequency -40 W-CDMA 3GPP Test Model 1+64 DPCH PAR = 9.7dB @ 0.01% Probability 3.84 MHz BW -45 23 Output Power / Tone(dBm) Temp.=+25oC W-CDMA 3GPP Test Model 1+64 DPCH PAR = 9.7dB @ 0.01% Probability 3.84 MHz BW -45 ACLR (dBm) ACLR (dBm) Frequency : 0.94 GHz -50 -55 - 40 °C +25°C +85 °C -60 -50 -55 0.92 GHz -60 0.94 GHz 0.96 GHz -65 -65 12 14 16 18 20 22 24 26 12 14 16 Output Power (dBm) 20 22 24 26 Collector Current vs. Output Power 1100 1000 18 Output Power (dBm) Frequency : 0.94 GHz CW Signal Temp.=+25oC Icc (mA) 900 800 700 600 500 400 16 18 20 22 24 26 28 30 32 34 Output Power (dBm) Data Sheet: Rev H 09/24/12 © 2012 TriQuint Semiconductor, Inc. - 7 of 13- Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TQP7M9104 2W High Linearity Amplifier Application Circuit 2110-2170 MHz (TQP7M9104-PCB2140) Vcc +5V R6 220 R7 110 D3 SM05T1G C7 10 uF 6032 C13 C17 6 20 19 GND/NC 22 21 GND/NC GND/NC 23 RFout GND/NC GND/NC 7 1.5 pF GND/NC 5 C8 RFin 18 17 C15 22 pF L1 18 nH 0805 16 C3 J3 100 pF RF Output 15 C2 14 2.7 pF 13 12 2.4 pF 22 pF RFout GND/NC C10 U1 RFin GND/NC 0 4 10 RF Input C9 RFout GND/NC 51 GND/NC GND/NC 9 C11 GND/NC GND/NC J2 3 C1 100 pF B1 0 Iref GND/NC L1 C2 2 R2 1000 pF R1 120 nH 0603 L3 0 Vbias C3 C8 C10 U1 C9 GND/NC 24 C14 100 pF 1 R2 GND/NC GND/NC L4 0 8 C15 C14 C11 C17 0.1 uF R3 0 B1 R1 C1 L3 L4 R3 C13 11 R6 R7 C7 Notes: 1. See PC Board Layout under Application Information section for more information. 2. Components shown on the silkscreen but not on the schematic are not used. 3. 0 Ω resistors may be replaced with copper trace in the target application layout. 4. Iref can be used as device power down current by placing R7 at location R8. 5. The recommended component values are dependent upon the frequency of operation. 6. All components are of 0603 size unless stated on the schematic. 7. R1 is critical for device linearity performance. 8. Critical component placement locations: Distance between center of C8 and U1 device package is 50 mil (5.5° at 2140MHz) Distance between center of C2 and U1 device package is 113 mil (12.4° at 2140MHz) Distance between center of C9 and U1 device package is 275 mil (30.3° at 2140MHz) Bill of Material Ref Des Value Description Manuf. Part Number U1 n/a 2W High Linearity Amplifier TriQuint TQP7M9104 n/a n/a Printed Circuit Board TriQuint 1078282 D3 n/a Zener, dual, SOT-23 various Capacitor, Chip, 0603, ±0.05pF, 50V, Accu-P Capacitor, Chip, 0603, ±0.05pF, 50V, Accu-P Capacitor, Chip, 0603, ±0.05pF, 50V, Accu-P Resistor, Chip, 0603, 5%, 1/16W Capacitor, Chip, 0603, 5%, 50V, NPO/COG Capacitor, Chip, 0603, 5%, 50V, NPO/COG Inductor, 1008, 5%, Ceramic Capacitor, Chip, 0603, 10%, 50V, NPO/COG Capacitor, Chip, 0603, 10%, 50V, X5R Capacitor , Tantalum, 6032, 20 %, 50V Resistor, Chip, 0603, 5%, 1/16W Resistor, Chip, 0603, 1%, 1/16W Resistor, Chip, 0603, 1%, 1/16W Inductor, 0603, 5% Do Not Place AVX AVX AVX various various various Coilcraft various various various various various various Toko C8 C9 C2 B1, L3, L4, R3, C11 C10, C15 C1, C14, C3 L1 C17 C13 C7 R2 R6 R7 R1 R8, R4, C12, C4, D3 1.5 pF 2.4 pF 2.7 pF 0Ω 22 pF 100 pF 18 nH 1000 pF 0.1 uF 10 uF 51 Ω 220 Ω 110 Ω 120 nH n/a Data Sheet: Rev H 09/24/12 © 2012 TriQuint Semiconductor, Inc. - 8 of 13- 06035J1R5ABSTR 06035J2R4ABSTR 06035J2R7ABSTR 1008HQ-18NXJL LL1608-FSR12J Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TQP7M9104 2W High Linearity Amplifier Typical Performance 2110-2170 MHz Frequency MHz 2110 2140 2170 Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (+17 dBm/tone, ∆f = 1 MHz) WCDMA Channel power (at -50 dBc ACLR) [1] Noise Figure Supply Voltage, Vcc Quiescent Collector Current, Icq Reference Current , Iref dB dB dB dBm dBm dBm dB V mA mA 15.8 -12.4 -8.7 +32.9 +49 +23.5 4.4 15.8 -12.0 -9.5 +32.8 +49.5 +23.8 4.4 +5 435 19 15.8 -11.8 -10.5 +32.8 +50 +24.0 4.6 Notes: 1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 9.7 dB at 0.01% Prob. RF Performance Plots 2110-2170 MHz Gain vs. Frequency 18 0 Return Loss (dB) Gain (dB) 17 16 15 - 40°C +25°C +85°C 14 13 2.10 2.12 2.14 2.16 2.18 - 40°C +25°C +85°C -5 -10 -15 -20 2.10 2.20 Input Return Loss vs. Frequency 2.12 Frequency (GHz) Output Return Loss vs. Frequency - 40°C +25°C +85°C -5 2.18 2.20 +85°C +25°C −40°C 34 -10 -15 -20 2.10 2.16 P1dB vs. Temperature 35 P1dB (dBm) Return Loss (dB) 0 2.14 Frequency (GHz) 33 32 31 2.12 2.14 2.16 2.18 2.20 30 2.11 Data Sheet: Rev H 09/24/12 © 2012 TriQuint Semiconductor, Inc. 2.12 2.13 2.14 2.15 2.16 2.17 Frequency (GHz) Frequency (GHz) - 9 of 13- Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TQP7M9104 2W High Linearity Amplifier OIP3 vs. Output Power vs. Temperature 55 OIP3 vs. Output Power vs. Frequency 55 1MHz Tone Spacing 1MHz Tone Spacing Temp.=+25oC 50 OIP3 (dBm) OIP3 (dBm) 50 45 40 - 40 °C +25°C +85 °C 35 45 40 35 2.11 GHz 30 2.14 GHz 2.17 GHz 30 13 15 17 19 21 23 25 13 15 17 Output Power / Tone(dBm) ACLR vs. Output Power vs. Temperature -40 21 23 25 ACLR vs. Output Power vs. Frequency -40 W-CDMA 3GPP Test Model 1+64 DPCH PAR = 9.7dB @ 0.01% Probability 3.84 MHz BW -45 19 Output Power / Tone(dBm) Temp.=+25oC W-CDMA 3GPP Test Model 1+64 DPCH PAR = 9.7dB @ 0.01% Probability 3.84 MHz BW -45 ACLR (dBm) ACLR (dBm) Frequency : 2.14 GHz -50 -55 - 40 °C +25°C +85 °C -60 -50 -55 2.11 GHz -60 2.14 GHz 2.17 GHz -65 -65 17 19 21 23 25 27 17 19 Output Power (dBm) Icc vs. Output Power 1000 21 23 25 27 Output Power (dBm) 6.0 Noise Figure vs. Frequency 900 Temp.=+25oC 5.0 800 NF (dB) Collector Current (mA) Frequency : 2.14 GHz CW Signal 700 4.0 600 3.0 500 400 16 18 20 22 24 26 28 30 32 34 2.0 2.11 Output Power (dBm) Data Sheet: Rev H 09/24/12 © 2012 TriQuint Semiconductor, Inc. 2.12 2.13 2.14 2.15 2.16 2.17 Frequency (GHz) - 10 of 13- Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TQP7M9104 2W High Linearity Amplifier GND/NC GND/NC 19 GND/NC GND/NC 20 21 15 5 14 6 13 GND/NC RFout/Vcc RFout/Vcc RFout/Vcc GND/NC GND/NC GND/NC GND/NC GND/NC Iref 12 4 11 16 10 3 9 17 7 GND/NC 2 GND/NC RFin 22 GND/NC RFin 18 8 GND/NC 1 GND/NC GND/NC 23 24 Vbias GND/NC Pin Configuration and Description Backside Paddle - RF/DC Ground Pin Symbol Description 1 2, 3, 6,7, 8, 9, 10, 11, 12, 13,17, 19, 20, 21, 22, 23, 24 Vbias Voltage supply for active bias for the amp. Connect to same supply voltage as Vcc. GND/NC No internal connection. This pin can be grounded or N/C on PCB. Land pads should be provided for PCB mounting integrity. 4, 5 RFin 14, 15, 16 RFout / Vcc 18 Iref Backside paddle RF/DC GND RF Input. DC voltage present, blocking capacitor required. Requires external match for optimal performance. RF Output. DC Voltage present, blocking cap required. Requires external match for optimal performance. Reference current into internal active bias current mirror. Current into Iref sets device quiescent current. Also, can be used as on/off control. Multiple Vias should be employed to minimize inductance and thermal resistance. Use recommended via pattern shown under mounting configuration and ensure good solder attach for optimum thermal and electrical performance Evaluation Board PCB Information TriQuint PCB 1080068 Material and Stack-up 0.014" 0.062" ± 0.006" Finished Board Thickness Nelco N-4000-13 εr=3.7 typ. 1 oz. Cu top layer 1 oz. Cu inner layer Core 1 oz. Cu inner layer 0.014" Nelco N-4000-13 1 oz. Cu bottom layer 50 ohm line dimensions: width = .031” spacing = .035”. Data Sheet: Rev H 09/24/12 © 2012 TriQuint Semiconductor, Inc. - 11 of 13- Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TQP7M9104 2W High Linearity Amplifier Mechanical Information Package Marking and Dimensions Package Marking: Part number – 7M9104 Year, week - YYWW Assembly code - XXXXX C 4.000 A 0.203 Ref. 2.700±0.050 Exp.DAP PIN #1 IDENTIFICATION CHAMFER 0.300 X 45° .400±0.050 B 4.000 .500 Bsc 7M9104 2.700±0.050 Exp.DAP R.075 .25±0.050 .85±.05 2.500 Ref. 0.000-.050 f .10 C d .08 C PCB Mounting Pattern 16X .38 .64 TYP .50 PITCH, TYP 24X .70 FULL R.19 .64 TYP 2.70 2.70 COMPONENT SIDE 2.70 2.70 BACK SIDE Data Sheet: Rev H 09/24/12 © 2012 TriQuint Semiconductor, Inc. - 12 of 13- NOTES: 1. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from supplier to supplier, careful process development is recommended. 2. All dimensions are in millimeters [inches]. Angles are in degrees. 3. Use 1 oz. copper minimum for top and bottom layer metal. 4. Vias are required under the backside paddle of this device for proper RF/DC grounding and thermal dissipation. We recommend a 0.35mm (#80/.0135") diameter bit for drilling via holes and a final plated thru diameter of 0.25mm (0.10”). 5. Ensure good package backside paddle solder attach for reliable operation and best electrical performance. 6. Place mounting screws near the part to fasten a back side heat sink. 7. Do not apply solder mask to the back side of the PC board in the heat sink contact region. 8. Ensure that the backside via region makes good physical contact with the heat sink. Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TQP7M9104 2W High Linearity Amplifier Product Compliance Information ESD Sensitivity Ratings Solderability Compatible with both lead-free (260 °C max. reflow temp.) and tin/lead (245 °C max. reflow temp.) soldering processes. ESD Rating: Value: Test: Standard: 1C ≥ 1000 V and < 2000 V Human Body Model (HBM) JEDEC Standard JESD22-A114 Package lead plating: Annealed Matte Tin over Copper ESD Rating: Value: Test: Standard: IV ≥ 1000 V min Charged Device Model (CDM) JEDEC Standard JESD22-C101 This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). RoHs Compliance This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br402) Free PFOS Free SVHC Free MSL Classification MSL Rating: Test: Standard: 1 +260 °C convection reflow JEDEC standard IPC/JEDEC J-STD-020 Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: [email protected] Tel: Fax: +1.503.615.9000 +1.503.615.8902 For technical questions and application information: Email: [email protected] Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Data Sheet: Rev H 09/24/12 © 2012 TriQuint Semiconductor, Inc. - 13 of 13- Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ®