Transistors SMD Type Product specification 2SA1923 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 0.127 max 3 .8 0 +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 IC=-100mA,IB=-10mA +0.15 0.50 -0.15 +0.2 9.70 -0.2 Low Saturation Voltage:VCE(sat)=-1V(Max.) +0.15 5.55 -0.15 High Voltage:VCBO=-400V +0.15 4.60-0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-to-Base Voltage VCBO -400 V Collector-to-Emitter Voltage VCEO -400 V Emitter-to-Base Voltage VEBO -7 V Collector Current IC -0.5 A Collector Current (Pulse) ICP -1 A Base Current IB -0.25 A Collector Dissipation PC Tc=25 1 W 10 W Junction Temperature Tj 150 Storage Temperature Tstg -55 to 150 http://www.twtysemi.com [email protected] 4008-318-123 1of 2 Transistors SMD Type Product specification 2SA1923 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector Cutoff Current ICBO VCB=-400V, IE=0 -10 ìA Emitter Cutoff Current IEBO VEB=-7V, IC=0 -1 ìA Collector-to-Emitter Breakdown Voltage DC Current Gain V(BR)CEO hFE IC=-10mA, IB=0 -400 VCE=-5V, IC=-20mA 140 450 V VCE=-5V, IC=-100mA 140 400 Collector-to-Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-10mA -0.4 -1.0 V Base-to-Emitter Saturation Voltage VBE(sat) IC=-100mA, IB=-10mA -0.76 -0.9 V Transition Frequency fT VCE=-5V, IC=-50mA 35 MHz VCB=-10V, f=1MHz,IE=0 18 pF Collector Output Capacitance Cob Switching Time Turn-on Time ton 0.2 ìs Switching Time Storage Time tstg 2.3 ìs tf 0.2 ìs Switching Time Fall Time http://www.twtysemi.com [email protected] 4008-318-123 2 of 2