Transistors SMD Type Product specification 2SD2414 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 2 .5 4 -0+ 0.2.2 8 .7 -0+ 0.2.2 5 .6 0 Low Saturation Voltage:VCE(sat)=0.5V(Max.)(at IC=4A) +0.2 0.4-0.2 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V Collector current IC 7 A Base current IB 1 A 1.5 W 40 W Collector power dissipation PC TC=25 Junction temperature Tj 150 Storage temperature Tstg -55 to +125 http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors SMD Type Product specification 2SD2414 Electrical Characteristics Ta = 25 Max Unit Collector cut-off current Parameter ICBO VCB = 100 V, IE = 0 5 ìA Emitter cut-off current IEBO VEB = 5 V, IC = 0 5 mA Collector-emitter sustaining voltage VCEO IC = 50 mA, IB=0 80 VCE = 1 V, IC = 1 A 100 VCE = 1 V, IC = 4 A 30 DC current gain Symbol hFE Testconditons Min Typ V 320 Collector-emitter saturation voltage VCE (sat) IC = 4A, IB = 0.4A 0.25 0.5 V Base-emitter saturation voltage VBE (sat) IC =4A, IB = 0.4A 0.9 1.4 V Transition frequency fT VCE=4V,IC=1A 10 MHz VCB=10V,IE=0,f=1MHz 200 pF Collector output capacitance Cob Storage time Turn-on Time ton 0.4 Storage time Storage Time tstg 2.5 tf 0.5 Storage time Fall Time http://www.twtysemi.com [email protected] 4008-318-123 ìs 2 of 2