Product specification 2SB1182 TO-252 Features 6.50 +0.2 5.30-0.2 Low VCE(sat). +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 PNP silicon transistor 3 .8 0 Epitaxial planar type 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO -32 V Emitter-base voltage VEBO -5 V Collector current IC -2 A Collector current pulse ICP -3 A Collector power dissipation(Tc=25 ) PC 10 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=-50ìA -40 V Collector-emitter breakdown voltage BVCEO IC=-1mA -32 V Emitter-base breakdown voltage BVEBO IE=-50ìA -5 V ICBO VCB=-20V IEBO VEB=-4V Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage VCE(sat) IC= -2A, IB= -0.2A DC current transfer ratio hFE Output capacitance fT Transition frequency Cob VCE= -3V, IC= -0.5A -0.5 82 -1 ìA -1 ìA -0.8 V 390 VCE= -5V, IE=0.5A, f=100MHz 100 MHz VCB= -10V,IE=0A,f=1MHz 50 pF hFE Classification Rank P Q R hFE 82 180 120 270 180 390 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1