TYSEMI 2SB1182

Product specification
2SB1182
TO-252
Features
6.50
+0.2
5.30-0.2
Low VCE(sat).
+0.15
1.50 -0.15
+0.15
-0.15
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
+0.1
0.60-0.1
2.3
+0.15
5.55 -0.15
0.127
max
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
+0.15
0.50 -0.15
+0.2
9.70 -0.2
PNP silicon transistor
3 .8 0
Epitaxial planar type
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-40
V
Collector-emitter voltage
VCEO
-32
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-2
A
Collector current pulse
ICP
-3
A
Collector power dissipation(Tc=25 )
PC
10
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
BVCBO
IC=-50ìA
-40
V
Collector-emitter breakdown voltage
BVCEO
IC=-1mA
-32
V
Emitter-base breakdown voltage
BVEBO
IE=-50ìA
-5
V
ICBO
VCB=-20V
IEBO
VEB=-4V
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
VCE(sat) IC= -2A, IB= -0.2A
DC current transfer ratio
hFE
Output capacitance
fT
Transition frequency
Cob
VCE= -3V, IC= -0.5A
-0.5
82
-1
ìA
-1
ìA
-0.8
V
390
VCE= -5V, IE=0.5A, f=100MHz
100
MHz
VCB= -10V,IE=0A,f=1MHz
50
pF
hFE Classification
Rank
P
Q
R
hFE
82 180
120 270
180 390
http://www.twtysemi.com
[email protected]
4008-318-123
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