Product specification 2SB1184 TO-252 Features 6.50 +0.2 5.30-0.2 Low VCE(sat). +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Epitaxial planar type 3 .8 0 PNP silicon transistor. 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -3 A Collector power dissipation(Tc=25 ) PC 1 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=-50ìA -60 V Collector-emitter breakdown voltage BVCEO IC=-1mA -50 V Emitter-base breakdown voltage -5 BVEBO IE=-50ìA Collector cutoff current ICBO VCB=-40V -1 ìA Emitter cutoff current IEBO VEB=-4V -1 ìA -1 V Collector-emitter saturation voltage V VCE(sat) IC= -2A, IB= -0.2A DC current transfer ratio hFE Output capacitance fT Transition frequency Cob VCE= -3V, IC= -0.5A 82 390 VCE= -5V, IE=0.5A, f=30MHz 70 MHz VCB= -10V,IE=0A,f=1MHz 50 pF hFE Classification Rank P Q R hFE 82 180 120 270 180 390 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1