TYSEMI 2SD2118

Transistors
IC
SMD Type
Product specification
2SD2118
TO-252
Features
+0.15
1.50 -0.15
+0.15
6.50-0.15
+0.2
5.30-0.2
Unit: mm
+0.1
2.30-0.1
+0.8
0.50-0.7
Low VCE(sat).
+0.1
0.60-0.1
2.3
3 .8 0
+0.15
5.55 -0.15
0.127
max
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
NPN silicon transistor.
+0.15
0.50 -0.15
+0.2
9.70 -0.2
Excellent DC current gain characteristics.
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
Collector current (pulse) *
ICP
Collector power dissipation
PC
TC = 25
5
A (DC)
10
A(Pulse)*
10
A
1
W
10
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* Pw=10ms.
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
BVCBO
IC=50ìA
50
V
Collector-emitter breakdown voltage
BVCEO
IC=1mA
20
V
Emitter-base breakdown voltage
BVEBO
IE=50ìA
6
V
ICBO
VCB=40V
IEBO
VEB=5V
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
VCE(sat) IC=4 A, IB=0.1A
DC current transfer ratio
hFE
Output capacitance
fT
Transition frequency
Cob
VCE=2V, IC=0.5A
0.3
120
0.5
ìA
0.5
ìA
1.0
V
390
VCE=6V, IE= -50mA, f=100MHz
150
MHz
VCB=20V, IE=0A, f=1MHz
30
pF
hFE Classification
Rank
Q
R
hFE
120 270
180 390
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