Transistors IC SMD Type Product specification 2SD2118 TO-252 Features +0.15 1.50 -0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low VCE(sat). +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 NPN silicon transistor. +0.15 0.50 -0.15 +0.2 9.70 -0.2 Excellent DC current gain characteristics. 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 6 V Collector current IC Collector current (pulse) * ICP Collector power dissipation PC TC = 25 5 A (DC) 10 A(Pulse)* 10 A 1 W 10 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * Pw=10ms. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=50ìA 50 V Collector-emitter breakdown voltage BVCEO IC=1mA 20 V Emitter-base breakdown voltage BVEBO IE=50ìA 6 V ICBO VCB=40V IEBO VEB=5V Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage VCE(sat) IC=4 A, IB=0.1A DC current transfer ratio hFE Output capacitance fT Transition frequency Cob VCE=2V, IC=0.5A 0.3 120 0.5 ìA 0.5 ìA 1.0 V 390 VCE=6V, IE= -50mA, f=100MHz 150 MHz VCB=20V, IE=0A, f=1MHz 30 pF hFE Classification Rank Q R hFE 120 270 180 390 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1