TYSEMI 2SB624

Product specification
2SB624
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
0.4
3
1
0.55
High dc current gain. hFE:200TYP. (VCE=-1V, IC=-100mA)
+0.1
1.3-0.1
+0.1
2.4-0.1
Micro package.
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
-30
V
Collector to emitter voltage
VCEO
-25
V
Emitter to base voltage
VEBO
-5
V
Collector current (DC)
IC
-700
mA
Total power dissipation
PT
200
mW
Junction temperature
Tj
150
Tstg
-55 to +150
Storage temperature range
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = -30 V, IE = 0
-100
nA
Emitter cutoff current
IEBO
VEB = -5.0 V, IC = 0
-100
nA
DC current gain *
hFE
VCE = -1.0 V, IC = -100 mA
110
VBE
VCE = -6.0 V, IC = -10 mA
-600
Base to emitter voltage *
VCE(sat) IC = -700 mA, IB = -70 mA
Collector saturation voltage *
Output capacitance
Cob
Gain bandwidth product
* Pulsed: PW
350 µs, duty cycle
fT
200
400
-640
-700
mV
-0.25
-0.6
V
VCB = -6.0 V, IE = 0, f = 1.0 MHz
17
pF
VCE = -6.0 V, IE = 10 mA
160
MHz
2%
hFE Classification
BV
Marking
Rank
1
2
3
4
5
hFE
110 180
135 220
170 270
200 320
250 400
http://www.twtysemi.com
[email protected]
4008-318-123
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