Product specification 2SA1608 Features High fT: fT=400MHz. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -40 V Emitter-base voltage VEBO -5 V Collector current IC -500 mA Total power dissipation PT 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = -40V, IE=0 -100 nA Emitter cutoff current IEBO VEB = -4V, IC=0 -100 nA hFE VCE = -2V , IC = -150mA DC current gain * Testconditons Collector-emitter saturation voltage * VCE(sat) IC = -500mA , IB = -50mA Base-emitter saturation voltage * VBE(sat) IC = -500mA , IB = -50mA Gain bandwidth product fT VCE = -10V , IE = 20mA Min 75 Typ 140 300 -0.45 -0.75 -1 150 -1.3 400 V V MHz Output capacitance Cob VCB = -10V , IE = 0 , f = 1.0MHz 5 Turn-on time ton VCC = -30V , 25 Storage time tstg IC = 150mA , 70 ns Turn-off time toff IB1 = -IB2 = 15mA 100 ns *. PW 8 pF ns 350ìs,duty cycle 2% hFE Classification Marking Y12 hFE 75 150 http://www.twtysemi.com Y13 100 Y14 200 150 300 [email protected] 4008-318-123 1 of 1